Induced-junction silicon photodiodes based on SiO2/SiNx surface passivation are attractive for high-accuracy radiometry, but their use in the deep ultraviolet is limited by UV-induced degradation of the dielectric stack. In this work, we investigate the degradation of SiO2/SiNx-passivated p-type silicon photodiodes under UV irradiation and evaluate strategies for improving stability through shallow implanted junctions and oxide processing. Capacitance–voltage measurements on MIS capacitors and lifetime measurements on symmetrically passivated wafers show that UV exposure causes a rapid reduction in effective dielectric charge and carrier lifetime, followed by saturation at higher dose, consistent with filling of a finite population of electrically active trap states. Induced-junction photodiodes exhibit rapid photocurrent loss at 222 nm and, in some cases, eventual collapse, indicating that the remaining effective dielectric charge is insufficient to sustain the induced junction. To maintain junction functionality after UV exposure, shallow As- and Sb-implanted junctions are employed, resulting in an initial reduction during 222 nm exposure followed by stabilization at around 80–85% of the initial value up to the highest tested dose of 200 J/cm2. Further improvement is achieved by stripping and regrowing the implanted screen oxide before SiNx deposition, yielding nearly unchanged photocurrent after prolonged 222 nm exposure up to ca. 500 J/cm2. These results show that UV stability can be substantially improved by reducing device dependence on dielectric-induced inversion and by improving post-implantation interfacial oxide quality