Design and fabrication of a 4-terminal in-plane nanoelectromechanical relayShow others and affiliations
2023 (English)Conference paper, Poster (with or without abstract) (Refereed)
Abstract [en]
We present 4-terminal (4-T) silicon (Si) nanoelectronmechanical (NEM) relays fabricated on silicon-oninsulator (SOI) wafers. We demonstrate true 4-T switching behavior with isolated control and signal paths. A pull-in voltage as low as 11.6 V is achieved with the miniaturized design. 4-T NEM relays are a very promising candidate for building ultra-low-power logic circuits since they enable novel circuit architectures to realize logic functions with far fewer devices than CMOS implementations, while also allowing the dynamic power consumption to be reduced by body-biasing.
Place, publisher, year, edition, pages
2023.
Keywords [en]
4-T NEM relays, in-plane Si relays, decoupled signals, low pull-in voltage, ultra-low power consumption
National Category
Engineering and Technology
Research subject
Electrical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-339307OAI: oai:DiVA.org:kth-339307DiVA, id: diva2:1810149
Conference
Transducers2023 - The 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Kyoto, June 25-29, 2023
Funder
EU, Horizon 2020, 871740
Note
QC 20231108
2023-11-072023-11-072023-11-08Bibliographically approved