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  • 1.
    Aakash, förnamn
    et al.
    Department of Electronics and Communication Engg., Birla Institute of Technology.
    Nordblad, Per
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Mohan, Rajendra
    Department of Physics, National Institute of Technology Patna.
    Mukherjee, Samrat
    Department of Physics, National Institute of Technology Patna.
    Structural, magnetic and hyperfine characterizations of nanocrystalline Zn-Cd doped nickel ferrites2017Inngår i: Journal of Magnetism and Magnetic Materials, ISSN 0304-8853, E-ISSN 1873-4766, Vol. 441, s. 710-717Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In our present work, we have synthesized a series of Cd-Zn doped nickel ferrite ((Cd-0.5 Zn-x(x)) Ni0(.5)Fe(2)O(4); x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5) through standard chemical co-precipitation method to study the influence of diamagnetic ions (Cd, Zn) on the magnetic properties of ferrites. XRD and Raman spectroscopy were employed for the structural characterizations. The refinement of the X-ray diffractogram data augmented by the Williamson-Hall plots showed the presence of Cd2+ vacancies and a strained crystal structure. The vibrational spectroscopy indicated the presence of lower space-group symmetry and a distorted crystal structure. Magnetic measurements showed the samples possessed low magnetic anisotropy along with a canted spin structure. The Mossbauer measurements confirmed the cation distribution and gave evidence of super transferred hyperfine interactions arising due to canted spin structure of the system.

  • 2.
    Abbas, Ghazanfar
    et al.
    KTH, Skolan för industriell teknik och management (ITM), Energiteknik. COMSATS Institute of Information Technology, Pakistan.
    Raza, Rizwan
    KTH, Skolan för industriell teknik och management (ITM), Energiteknik. COMSATS Institute of Information Technology, Pakistan.
    Ahmad, M. Ashfaq
    Khan, M. Ajmal
    Hussain, M. Jafar
    Ahmad, Mukhtar
    Aziz, Hammad
    Ahmad, Imran
    Batool, Rida
    Altaf, Faizah
    Zhu, Bin
    KTH, Skolan för industriell teknik och management (ITM), Energiteknik.
    Electrochemical investigation of mixed metal oxide nanocomposite electrode for low temperature solid oxide fuel cell2017Inngår i: International Journal of Modern Physics B, ISSN 0217-9792, Vol. 31, nr 27, artikkel-id 1750193Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Zinc-based nanostructured nickel (Ni) free metal oxide electrode material Zn-0.60/CU0.20Mn0.20 oxide (CMZO) was synthesized by solid state reaction and investigated for low temperature solid oxide fuel cell (LTSOFC) applications. The crystal structure and surface morphology of the synthesized electrode material were examined by XRD and SEM techniques respectively. The particle size of ZnO phase estimated by Scherer's equation was 31.50 nm. The maximum electrical conductivity was found to be 12.567 S/cm and 5.846 S/cm in hydrogen and air atmosphere, respectively at 600 degrees C. The activation energy of the CMZO material was also calculated from the DC conductivity data using Arrhenius plots and it was found to be 0.060 and 0.075 eV in hydrogen and air atmosphere, respectively. The CMZO electrode-based fuel cell was tested using carbonated samarium doped ceria composite (NSDC) electrolyte. The three layers 13 mm in diameter and 1 mm thickness of the symmetric fuel cell were fabricated by dry pressing. The maximum power density of 728.86 mW/cm(2) was measured at 550 degrees C.

  • 3.
    Abdalla, Hassan
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Komplexa material och system. Linköpings universitet, Tekniska fakulteten.
    Charge and Energy Transport in Disordered Organic Semiconductors2018Doktoravhandling, med artikler (Annet vitenskapelig)
    Abstract [en]

    Improvement of the performance of organic disordered semiconductors (OSC) is driven by the understanding   of the underlying charge transport mechanisms and systematic exploitation thereof. There exists a multitude of materials and material systems based on polymers and small molecules with promising performance for use in organic light emitting diodes, photovoltaics, organic field-effect transistors and thermoelectrics. However, universal understanding of many classes of these materials has eluded researchers, due to their broad   spectrum of morphologies, molecular structures and electrical properties. Building on the large body of existing models, this thesis deals with charge transport phenomena from the perspective of transport energetics, by studying the interplay between a few but important concepts commonly accepted to play a crucial role in all  OSC materials; energetic disorder, charge carrier hopping and Coulomb interactions. The influence of these concepts on the energetic landscape through which charge carriers move and how this translates to experimentally observed transport phenomena are studied by a combination of experimental work, kinetic Monte Carlo (MC) simulations and empirical and analytical models.

    The universal scaling and collapse of the temperature and electric field dependence of the conductivity of PEDOT:PSS to a single curve is shown to be functionally equivalent to the scaling of the effective temperature, which describes the effect of field heating as a broadening of the charge carrier distribution. From numerical investigation of the energy relaxation, an empirical model is developed that relates the physical meaning   behind both concepts to the heat balance between Joule heating of the carrier distribution via the effective temperature and energy loss to the lattice. For this universal description to be applicable a strongly energy- dependent density of states (DOS) as well as Coulomb interactions and large carrier concentrations are needed.

    Chemical doping is a common way of improving charge transport in OSC and is also beneficial for energy transport, which combined leads to an increased thermoelectric power factor. The ensuing thermoelectric investigations not only showed the potential of these materials for use in thermoelectric generators, but are  also helpful in unraveling charge transport mechanism as they give direct insight into the energetics of a material. Interestingly, doped OSC exhibit the same universal power-law relationship between thermopower and conductivity, independent of material system or doping method, pointing towards a common energy and charge transport mechanism. In this thesis an analytical model is presented, which reproduces said universal power-law behavior and is able to attribute it to Variable Range Hopping (VRH) or a transition between Nearest Neighbour Hopping (NNH) and VRH at higher concentrations. This model builds on an existing three- dimensional hopping formalism that includes the effect of the attractive Coulomb potential of ionized dopants that leads to a broadening of the DOS. Here, this model is extended by including the energy offset between   host and dopant material and is positively tested against MC simulations and a set of thermoelectric measurements covering different material groups and doping mechanisms.

    Organic field effect transistors (OFETs) have become increasingly comparable in electrical mobility to their inorganic (silicon) counterparts. The spatial extent of charge transport in OFETs has been subject to debate since their inception with many experimental, numerical and analytical studies having been undertaken. Here it is shown that the common way of analyzing the dimensionality of charge transport in OFETs may be prone to misinterpretations. Instead, the results in this thesis suggest that charge transport in OFETs is, in fact, quasi- two-dimensional (2D) due to the confinement of the gate field in addition to a morphology-induced preferred in-plane direction of the transport. The inherently large charge carrier concentrations in OFETs in addition to   the quasi-2D confinement leads to increased Coulomb interaction between charge carriers as compared to bulk material, leading to a thermoelectric behavior that deviates from doped organic systems. At very large concentrations interesting charge transport phenomena are observed, including an unexpected simultaneous increase of the concentration dependence and the magnitude of the mobility, the appearance of a negative transconductance, indicating a transition to an insulating Mott-Hubbard phase. The experimental and   numerical results in this thesis relate these phenomena the intricacies of the interplay between Coulomb interactions, energetic disorder and charge carrier hopping.

  • 4.
    Abdalla, Hassan
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Komplexa material och system. Linköpings universitet, Tekniska fakulteten.
    Fabiano, Simone
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Fysik och elektroteknik. Linköpings universitet, Tekniska fakulteten.
    Kemerink, Martijn
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Komplexa material och system. Linköpings universitet, Tekniska fakulteten.
    Investigation of the dimensionality of charge transport in organic field effect transistors2017Inngår i: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 95, nr 8, artikkel-id 85301Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Ever since the first experimental investigations of organic field effect transistors (OFETs) the dimensionality of charge transport has alternately been described as two dimensional (2D) and three dimensional (3D). More recently, researchers have turned to an analytical analysis of the temperature-dependent transfer characteristics to classify the dimensionality as either 2D or 3D as well as to determine the disorder of the system, thereby greatly simplifying dimensionality investigations. We applied said analytical analysis to the experimental results of our OFETs comprising molecularly well-defined polymeric layers as the active material as well as to results obtained from kinetic Monte Carlo simulations and found that it was not able to correctly distinguish between 2D and 3D transports or give meaningful values for the disorder and should only be used for quasiquantitative and comparative analysis. We conclude to show that the dimensionality of charge transport in OFETs is a function of the interplay between transistor physics and morphology of the organic material.

  • 5.
    Abdalla, Hassan
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Komplexa material och system. Linköpings universitet, Tekniska fakulteten.
    Zuo, Guangzheng
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Komplexa material och system. Linköpings universitet, Tekniska fakulteten.
    Kemerink, Martijn
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Komplexa material och system. Linköpings universitet, Tekniska fakulteten.
    Range and energetics of charge hopping in organic semiconductors2017Inngår i: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 96, nr 24, artikkel-id 241202Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The recent upswing in attention for the thermoelectric properties of organic semiconductors (OSCs) adds urgency to the need for a quantitative description of the range and energetics of hopping transport in organic semiconductors under relevant circumstances, i.e., around room temperature (RT). In particular, the degree to which hops beyond the nearest neighbor must be accounted for at RT is still largely unknown. Here, measurements of charge and energy transport in doped OSCs are combined with analytical modeling to reach the univocal conclusion that variable-range hopping is the proper description in a large class of disordered OSC at RT. To obtain quantitative agreement with experiment, one needs to account for the modification of the density of states by ionized dopants. These Coulomb interactions give rise to a deep tail of trap states that is independent of the materials initial energetic disorder. Insertion of this effect into a classical Mott-type variable-range hopping model allows one to give a quantitative description of temperature-dependent conductivity and thermopower measurements on a wide range of disordered OSCs. In particular, the model explains the commonly observed quasiuniversal power-law relation between the Seebeck coefficient and the conductivity.

  • 6.
    Abdullaev, Fatkhulla
    et al.
    Physical-Technical Institute, Uzbek Academy of Sciences, Tashkent, Uzbekistan; Instituto de Fisica Teorica, Universidade Estadual Paulista Júlio de Mesquita Filho, São Paulo, Brazil.
    Ögren, Magnus
    Department of Applied Mathematics and Computer Science, Technical University of Denmark, Kongens Lyngby, Denmark.
    Sørensen, M. P.
    Department of Applied Mathematics and Computer Science, Technical University of Denmark, Kongens Lyngby, Denmark.
    Faraday waves in quasi-one-dimensional superfluid Fermi-Bose mixtures2013Inngår i: Physical Review A. Atomic, Molecular, and Optical Physics, ISSN 1050-2947, E-ISSN 1094-1622, Vol. 87, nr 2, artikkel-id 023616Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The generation of Faraday waves in superfluid Fermi-Bose mixtures in elongated traps is investigated. The generation of waves is achieved by periodically changing a parameter of the system in time. Two types of modulations of parameters are considered: a variation of the fermion-boson scattering length and the boson-boson scattering length. We predict the properties of the generated Faraday patterns and study the parameter regions where they can be excited.

  • 7. Aberg, D
    et al.
    Hallberg, T
    Svensson, B G
    Lindstrom, J L
    Linnarsson, M K
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Ultra-shallow thermal donor formation in oxygen-containing ambient1998Inngår i: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 210, s. 527-532Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Czochralski-grown phosphorus-doped (approximate to 2 x 10(14) cm(-3)) silicon wafers have been annealed in nitrogen, wet nitrogen, argon, oxygen, and vacuum ambients at 470 degrees C for times up to 500 h. Sample characterization was made with capacitance-voltage, four-point probe, DLTS, thermally stimulated capacitance, admittance spectroscopy, secondary ion-mass spectrometry, and Fourier transform infrared spectroscopy. This study finds a strong relation between the previously reported ultra-shallow thermal donors (USTDs) and shallow thermal donors (STDs), and it is shown that the net concentration of thermally formed donors is independent on annealing ambient within the experimental accuracy. It was found that the majority of formed donors for long anneals consisted of either STDs or USTDs, however, it was found that oxygen-containing ambient is indispensable for forming USTDs.

  • 8. Aberg, D
    et al.
    Linnarsson, M K
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Svensson, B G
    Hallberg, T
    Lindstrom, J L
    Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen1999Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 85, s. 8054-8059Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Czochralski-grown silicon wafers doped with phosphorus (similar to 10(14) cm(-3)) have been annealed in nitrogen, wet nitrogen, oxygen, argon, and vacuum ambients at 470 degrees C for times up to 500 h. Sample characterization was made using predominantly electrical techniques such as admittance spectroscopy and thermally stimulated capacitance measurements but also secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy were employed. In all samples, an increasing concentration of free carrier electrons is observed with increasing annealing time, reaching a maximum of similar to 10(16) cm(-3) at 100 h. For durations in excess of 100 h gradual decrease of the free electron concentration takes place except for the samples treated in wet nitrogen and oxygen atmospheres, which display donors stable even after 200 h. These stable centers are found to have shallower donor level positions in the energy band gap (similar to 25 meV below the conduction band edge E-c) than those of the centers formed in vacuum, argon, and nitrogen atmospheres (similar to 35 meV below E-c). The latter centers are associated with the well-established shallow thermal donors (STDs) while the origin of the former ones, which are labeled ultrashallow thermal donors (USTDs) is less known. However, on the basis of a wealth of experimental results we show that the USTDs are most likely perturbated STDs modified through interaction with fast-in diffusing oxygen species, possibly oxygen dimers. Further, comparison between the electrical data and the SIMS measurements reveals unambiguously that neither the STD nor the USTD centers involve nitrogen, in contrast to recent suggestions in the literature. (C) 1999 American Institute of Physics. [S0021-8979(99)06512-3].

  • 9.
    Abergel, David
    et al.
    KTH, Centra, Nordic Institute for Theoretical Physics NORDITA.
    Mucha-Kruczynski, Marcin
    Infrared absorption of closely aligned heterostructures of monolayer and bilayer graphene with hexagonal boron nitride2015Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 92, nr 11, artikkel-id 115430Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We model optical absorption of monolayer and bilayer graphene on hexagonal boron nitride for the case of closely aligned crystal lattices. We show that perturbations with different spatial symmetry can lead to similar absorption spectra. We suggest that a study of the absorption spectra as a function of the doping for an almost completely full first miniband is necessary to extract meaningful information about the moire characteristics from optical absorption measurements and to distinguish between various theoretical proposals for the physically realistic interaction. Also, for bilayer graphene, the ability to compare spectra for the opposite signs of electric-field-induced interlayer asymmetry might provide additional information about the moire parameters.

  • 10. Abou-Hamad, E.
    et al.
    Babaa, M. -R
    Bouhrara, M.
    Kim, Y.
    Saih, Y.
    Dennler, S.
    Mauri, F.
    Basset, J. -M
    Goze-Bac, C.
    Wågberg, Thomas
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Structural properties of carbon nanotubes derived from (13)C NMR2011Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 84, nr 16, s. 165417-Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We present a detailed experimental and theoretical study on how structural properties of carbon nanotubes can be derived from 13C NMR investigations. Magic angle spinning solid state NMR experiments have been performed on single-and multiwalled carbon nanotubes with diameters in the range from 0.7 to 100 nm and with number of walls from 1 to 90. We provide models on how diameter and the number of nanotube walls influence NMR linewidth and line position. Both models are supported by theoretical calculations. Increasing the diameter D, from the smallest investigated nanotube, which in our study corresponds to the inner nanotube of a double-walled tube to the largest studied diameter, corresponding to large multiwalled nanotubes, leads to a 23.5 ppm diamagnetic shift of the isotropic NMR line position d. We show that the isotropic line follows the relation d = 18.3/D + 102.5 ppm, where D is the diameter of the tube and NMR line position d is relative to tetramethylsilane. The relation asymptotically tends to approach the line position expected in graphene. A characteristic broadening of the line shape is observed with the increasing number of walls. This feature can be rationalized by an isotropic shift distribution originating from different diamagnetic shielding of the encapsulated nanotubes together with a heterogeneity of the samples. Based on our results, NMR is shown to be a nondestructive spectroscopic method that can be used as a complementary method to, for example, transmission electron microscopy to obtain structural information for carbon nanotubes, especially bulk samples.

  • 11. Abou-Hamad, E.
    et al.
    Kim, Y.
    Bouhrara, M.
    Saih, Y.
    Wågberg, Thomas
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Luzzi, D. E.
    Goze-Bac, C.
    NMR strategies to study the local magnetic properties of carbon nanotubes2012Inngår i: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 407, nr 4, s. 740-742Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The local magnetic properties of the one dimensional inner space of the nanotubes are investigated using C-13 nuclear magnetic resonance spectroscopy of encapsulated fullerene molecules inside single walled carbon nanotubes. Isotope engineering and magnetically purified nanotubes have been advantageously used on our study to discriminate between the different diamagnetic and paramagnetic shifts of the resonances. Ring currents originating from the pi electrons circulating on the nanotube, are found to actively screen the applied magnetic field by -36.9 ppm. Defects and holes in the nanotube walls cancel this screening locally. What is interesting, that at high magnetic fields, the modifications of the NMR resonances of the molecules from free to encapsulated can be exploited to determine some structural characteristics of the surrounding nanotubes, never observed experimentally. (C) 2011 Elsevier B.V. All rights reserved.

  • 12.
    Abou-Hamad, Edy
    et al.
    Universite Montpellier II.
    Kim, Y
    University of Pennsylvania.
    Talyzin, Alexandr
    Umeå universitet, Teknisk-naturvetenskaplig fakultet, Fysik.
    Goze-Bac, Christophe
    Universite Montpellier II.
    Luzzi, David
    University of Pennsylvania.
    Rubio, Angelo
    University of Basque Country.
    Wågberg, Thomas
    Umeå universitet, Teknisk-naturvetenskaplig fakultet, Fysik.
    Hydrogenation of C-60 in Peapods: Physical Chemistry in Nano Vessels2009Inngår i: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 113, nr 20, s. 8583-8587Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Hydrogenation of C-60 molecules inside SWNT was achieved by direct reaction with hydrogen gas at elevated pressure and temperature. Evidence for the C-60 hydrogenation in peapods is provided by isotopic engineering with specific enrichment of encapsulated species and high resolution C-13 and H-1 NMR spectroscopy with the observation of characteristic diamagnetic and paramagnetic shifts of the NMR lines and the appearance of sp(3) carbon resonances. We estimate that approximately 78% of the C-60 molecules inside SWNTs are hydrogenated to an average degree of 14 hydrogen atoms per C-60 molecule. As a consequence, the rotational dynamics of the encapsulated C60Hx molecules is clearly hindered. Our successful hydrogenation experiments open completely new roads to understand and control confined chemical reactions at the nano scale

  • 13.
    Abou-Hamad, Edy
    et al.
    Universite Montpellier 2, France.
    Kim, Y.
    University of Pennsylvania, Philadelphia.
    Wågberg, Thomas
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Boesch, D.
    University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley National Laboratory.
    Aloni, S.
    University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley National Laboratory.
    Zettl, Alex
    University of California at Berkeley, and Materials Sciences Division, Lawrence Berkeley National Laboratory.
    Rubio, Angelo
    Universidad del Pas Vasco UPV/EHU.
    Luzzi, David E.
    University of Pennsylvania, Philadelphia.
    Goze-Bac, Christophe
    CNRS Universit Montpellier 2.
    Molecular dynamics and phase transition in one-dimensional crystal of C60 encapsulated inside single wall carbon nanotubes2009Inngår i: ACS Nano, ISSN 1936-0851, E-ISSN 1936-086X, Vol. 3, nr 12, s. 3878-3883Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    One-dimensional crystals of 25% 13C-enriched C60 encapsulated inside highly magnetically purified SWNTs were investigated by following the temperature dependence of the 13C NMR line shapes and the relaxation rates from 300 K down to 5 K. High-resolution MAS techniques reveal that 32% of the encapsulated molecules, so-called the C60α, are blocked at room temperature and 68%, labeled C60β, are shown to reversly undergo molecular reorientational dynamics. Contrary to previous NMR studies, spin−lattice relaxation time reveals a phase transition at 100 K associated with the changes in the nature of the C60β dynamics. Above the transition, the C60β exhibits continuous rotational diffusion; below the transition, C60β executes uniaxial hindered rotations most likely along the nanotubes axis and freeze out below 25 K. The associated activation energies of these two dynamical regimes are measured to be 6 times lower than in fcc-C60, suggesting a quiet smooth orientational dependence of the interaction between C60β molecules and the inner surface of the nanotubes.

  • 14.
    Abou-Ras, Daniel
    et al.
    Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany..
    Wagner, Sigurd
    Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA..
    Stanbery, Bill J.
    Siva Power, 5102 Calle Sol, Santa Clara, CA 95054 USA..
    Schock, Hans-Werner
    Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany..
    Scheer, Roland
    Martin Luther Univ Halle Wittenberg, Inst Phys, Photovolta Grp, D-06120 Halle, Saale, Germany..
    Stolt, Lars
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik. Solibro Res AB, Sweden.
    Siebentritt, Susanne
    Univ Luxembourg, Phys & Mat Sci Res Unit, Lab Photovolta, Belvaux, Luxembourg..
    Lincot, Daniel
    CNRS EDF Chim Paristech PSL, Inst Photovolta Ile France IPVF, IRDEP, 6 Quai Watier, F-78401 Chatou, France..
    Eberspacher, Chris
    Solopower Syst Inc, Corp & Mfg Headquarters, 6308 North Marine Dr, Portland, OR 97203 USA..
    Kushiya, Katsumi
    Solar Frontier KK, 123-1 Shimo Kawairi, Atsugi, Kanagawa, Japan..
    Tiwari, Ayodhya N.
    Empa Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, Ueberlandstr 129, CH-8600 Dubendorf, Switzerland..
    Innovation highway: Breakthrough milestones and key developments in chalcopyrite photovoltaics from a retrospective viewpoint2017Inngår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 633, s. 2-12Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The present contribution is a summary of an event that was organized as a special evening session in Symposium V "Chalcogenide Thin-Film Solar Cells" at the E-MRS 2016 Spring Meeting, Lille, France. The presentations in this session were given by the coauthors of this paper. These authors present retrospectives of key developments in the field of Cu(In,Ga)(S,Se)(2) solar cells as they themselves had witnessed in their laboratories or companies. Also, anecdotes are brought up, which captured interesting circumstances in that evolutionary phase of the field. Because the focus was on historical perspectives rather than a comprehensive review of the field, recent developments intentionally were not addressed.

  • 15. Abrikosov, I. A.
    et al.
    Olsson, Pär
    Department of Materials and Mechanics of Components, EDF RandD, les Renardières, Moret-sur-Loing, France.
    Ponomareva, A. V.
    Correlation between electronic structure, magnetism and physical properties of Fe-Cr alloys: Ab initio modeling2008Inngår i: MATERIALS ISSUES FOR GENERATION IV SYSTEMS: STATUS, OPEN QUESTIONS AND CHALLENGES, 2008, s. 153-168Konferansepaper (Fagfellevurdert)
    Abstract [en]

    We review recent developments in the field of ab initio electronic structure theory and its application for studies of phase stability of alloy systems. Basic ideas behind state-of-the-art techniques for first-principles theoretical simulations of the phase stabilities and properties of intermetallic compounds and alloys based on the density functional theory are outlined. We concentrate on methods that allow for an efficient treatment of disorder effects, and illustrate their predictive power for the case of Fe-Cr system. We show that in the ferromagnetic alloys there are peculiarities of the mixing enthalpy in the low-Cr region in the bee phase. Thus the stability of the Cr containing steels stems from the negative mixing enthalpy at low concentrations of chromium. We explain the effect by the strong concentration dependence of the interatomic interactions in Fe-Cr system.

  • 16.
    Abrikosov, Igor A.
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten.
    Alling, Björn
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Steneteg, Peter
    Linköpings universitet, Institutionen för teknik och naturvetenskap, Medie- och Informationsteknik. Linköpings universitet, Tekniska fakulteten.
    Hultberg, Lasse
    Linköpings universitet, Institutionen för fysik, kemi och biologi. Linköpings universitet, Tekniska fakulteten.
    Hellman, Olle
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten.
    Yu Mosyagin, Igor
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Teoretisk Fysik. Linköpings universitet, Tekniska fakulteten. Department of Theoretical Physics and Quantum Technologies, National Research, Technological University MISiS, Moscow, Russia.
    Lugovskoy, Andrey V.
    Department of Theoretical Physics and Quantum Technologies, National Research, Technological University MISiS, Russia.
    Barannikova, Svetlana A.
    Institute of Strength Physics and Materials Science, Siberian Branch of Russian Academy of Science, Tomsk, Russia; Department of Physics and Engineering, Tomsk State University, Tomsk, Russia.
    Finite Temperature, Magnetic, and Many-Body Effects in Ab Initio Simulations of Alloy Thermodynamics2013Inngår i: TMS2013 Supplemental Proceedings, John Wiley & Sons, 2013, s. 617-626Kapittel i bok, del av antologi (Fagfellevurdert)
    Abstract [en]

    Ab initio electronic structure theory is known as a useful tool for prediction of materials properties. However, majority of simulations still deal with calculations in the framework of density functional theory with local or semi-local functionals carried out at zero temperature. We present new methodological solution.s, which go beyond this approach and explicitly take finite temperature, magnetic, and many-body effects into account. Considering Ti-based alloys, we discuss !imitations of the quasiharmonic approximation for the treatment of lattice vibrations, and present an accurate and easily extendable method to calculate free ,energies of strongly anharmonic solids. We underline the necessity to going beyond the state-of-the-art techniques for the determination of effective cluster interactions in systems exhibiting mctal-to-insulator transition, and describe a unified cluster expansion approach developed for this class of materials. Finally, we outline a first-principles method, disordered local moments molecular dynamics, for calculations of thermodynamic properties of magnetic alloys, like Cr1-x,.AlxN, in their high-temperature paramagnetic state. Our results unambiguously demonstrate importance of finite temperature effects in theoretical calculations ofthermodynamic properties ofmaterials.

  • 17.
    ABUDULIMU, ABASI
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Effectof Growth Time, Growth Temperature and Light  on Growth Mechanism of C60 nanorods2013Independent thesis Advanced level (degree of Master (Two Years)), 10 poäng / 15 hpOppgave
    Abstract [en]

    In this thesis work C60 nanorods were produced by Liquid-Liquid Interfacial Precipitation method (LLIP) assisted with 10 s of weak sonication. Ethanol and m-dichlorobenzene were used as poor and good solvents of C60, respectively. Five different temperatures, 4, 10, 20, 30, 40 and 50                         , were chosen as growth temperatures of different samples to investigate the effect of temperature on the grown structures. Different samples were prepared in the dark and under the light with various growth time to determine the effect of light and growth time on growth of C60 nanorods. The characterization of the grown C60 nanorods were conducted by transmission electron microscopy (TEM) and x-ray diffraction (XRD). The result of characterization indicated that the sonication introduced smaller C60 nanostructures; light irradiation and temperature increase (till 40 C0) during the growth time resulted in nanorods with smaller diameter, whereas the long growth time lead to the increase of the diameter of C60 nanorods. The as-grown C60 nanorods synthesized at different conditions possess an hcp crystal structure.    

  • 18. Achtziger, N
    et al.
    Grillenberger, J
    Witthuhn, W
    Linnarsson, M K
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Janson, M S
    Svensson, B G
    Hydrogen passivation of silicon carbide by low-energy ion implantation1998Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 73, s. 945-947Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    implantation of deuterium is performed to investigate the mobility and passivating effect of hydrogen in epitaxial alpha-SiC (polytypes 4H and 6H). To avoid excessive damage and the resulting trapping of hydrogen, the implantation is performed with low energy (600 eV H-2(2)+). The H-2 depth profile is analyzed by secondary ion mass spectrometry. Electrical properties are measured by capacitance-voltage profiling and admittance spectroscopy. In p-type SIG, hydrogen diffuses on a mu m scale even at room temperature and effectively passivates accepters. In n-type SiC, the incorporation of H is suppressed and no passivation is detected. (C) 1998 American Institute of Physics.

  • 19. Achtziger, N
    et al.
    Hulsen, C
    Janson, M
    Linnarsson, M K
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Svensson, B G
    Witthuhn, W
    Formation of passivated layers in p-type SiC by low energy ion implantation of hydrogen2000Inngår i: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Vol. 338-3, s. 933-936Konferansepaper (Fagfellevurdert)
    Abstract [en]

    The mobility of hydrogen and its passivating effect on accepters in p-type SiC is investigated. Hydrogen (isotope H-1 or H-2 alternatively) is implanted at temperatures between 300 K and 680 K with low energy (300 eV per atom) in order to minimize implantation damage. The depth profiles of 2H and of passivated accepters correspond closely. Up to 500 K, a fully passivated layer with a well defined thickness is formed. Its depth ton the order of 1 micrometer) is investigated as a function of doping level and hydrogen fluence. At higher temperatures, the incorporation drastically increases, but the electrical passivation is partial only. Qualitative explanations are given.

  • 20. Achtziger, N
    et al.
    Hulsen, C
    Witthuhn, W
    Linnarsson, M K
    KTH, Skolan för informations- och kommunikationsteknik (ICT).
    Janson, M
    Svensson, B G
    Mobility passivating effect and thermal stability of hydrogen in silicon carbide1998Inngår i: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 210, s. 395-399Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The diffusion and passivating effect of hydrogen (isotope H-2) in epitaxial p-type SiC is studied by secondary ion mass spectrometry and capacitance-voltage profiling on Schottky diodes. The incorporation of hydrogen is achieved by low-energy ion implantation. The influence of implantation energy, temperature and subsequent annealing is presented. Annealing experiments with an electric field applied reveal a reactivation of passivated accepters and a H+ ion drift at a surprisingly low temperature of 530 K.

  • 21.
    Adamczyk, Krzysztof
    et al.
    Department of Materials Science and Engineering, Trondheim, Norway.
    Søndenå, Rune
    Department for Solar Energy, IFE, Kjeller, Norway.
    Stokkan, Gaute
    Sintef Materials and Chemistry, Trondheim, Norway.
    Looney, Erin
    Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
    Jensen, Mallory
    Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
    Lai, Barry
    Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, USA.
    Rinio, Markus
    Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik (from 2013).
    Di Sabatino, Marisa
    Department of Materials Science and Engineering, NTNU, A. Getz vei 2B, NO-7491 Trondheim, Norway.
    Recombination activity of grain boundaries in high-performance multicrystalline Si during solar cell processing2018Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 123, nr 5, s. 1-6, artikkel-id 055705Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In this work, we applied internal quantum efficiency mapping to study the recombination activity of grain boundaries in High Performance Multicrystalline Silicon under different processing conditions. Wafers were divided into groups and underwent different thermal processing, consisting of phosphorus diffusion gettering and surface passivation with hydrogen rich layers. After these thermal treatments, wafers were processed into heterojunction with intrinsic thin layer solar cells. Light Beam Induced Current and Electron Backscatter Diffraction were applied to analyse the influence of thermal treatment during standard solar cell processing on different types of grain boundaries. The results show that after cell processing, most random-angle grain boundaries in the material are well passivated, but small-angle grain boundaries are not well passivated. Special cases of coincidence site lattice grain boundaries with high recombination activity are also found. Based on micro-X-ray fluorescence measurements, a change in the contamination level is suggested as the reason behind their increased activity.

  • 22.
    Adamczyk, Krzysztof
    et al.
    Department of Materials Science and Engineering, Trondheim, Norway.
    Søndenå, Rune
    Department for Solar Energy, IFE, Kjeller, Norway.
    You, Chang Chuan
    Department for Solar Energy, IFE, Kjeller, Norway.
    Stokkan, Gaute
    Sintef Materials and Chemistry, Trondheim, Norway.
    Lindroos, Jeanette
    Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik (from 2013).
    Rinio, Markus
    Karlstads universitet, Fakulteten för hälsa, natur- och teknikvetenskap (from 2013), Institutionen för ingenjörsvetenskap och fysik (from 2013).
    Di Sabatino, Marisa
    Department of Materials Science and Engineering, Trondheim, Norway.
    Recombination Strength of Dislocations in High-Performance Multicrystalline/Quasi-Mono Hybrid Wafers During Solar Cell Processing2018Inngår i: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 215, nr 2, artikkel-id 1700493Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Wafers from a hybrid silicon ingot seeded in part for High Performance Multicrystalline, in part for a quasi-mono structure, are studied in terms of the effect of gettering and hydrogenation on their final Internal Quantum Efficiency.The wafers are thermally processed in different groups – gettered and hydrogenated. Afterwards, a low temperature heterojunction with intrinsic thin layer cell process is applied to minimize the impact of temperature. Such procedure made it possible to study the effect of different processing steps on dislocation clusters in the material using the Light Beam Induced Current technique with a high spatial resolution. The dislocation densities are measuredusing automatic image recognition on polished and etched samples. The dislocation recombination strengths are obtained by a correlation of the IQE with the dislocation density according to the Donolato model. Different clusters are compared after different process steps. The results show that for the middle of the ingot, the gettering step can increase the recombination strength of dislocations by one order of magnitude. A subsequent passivation with layers containing hydrogen can lead to a decrease in the recombination strength to levels lower than in ungettered samples.

    Fulltekst tilgjengelig fra 2018-11-07 16:03
  • 23. Adeyev, V.M.
    et al.
    Vasylyev, M.O.
    Pogorelov, Ye.
    Features of auger-investigations of ultrathin periodic metallic film structures2006Inngår i: Metallofizika i novejsie tehnologii, ISSN 1024-1809, Vol. 28, nr 2, s. 193-200Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In the presented work the applicability of Auger Electron Spectroscopy for studying layered metal film structures Fe/(Au, Cu)/Tb on Si substrate with thickness of layers up to 30 Å was shown. It was ascertained that Fe layer is interacting with Si substrate and as a result Fe-silicide is formed. The thickness of buffer layers aimed to protect Fe layer appeared to be insufficient for complete suppression of silicide formation

  • 24.
    Adlmann, Franz Alois
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Opportunities and challenges of surface scattering at next generation neutron sources2018Doktoravhandling, med artikler (Annet vitenskapelig)
    Abstract [en]

    Complex fluids and soft matter are ubiquitously found in the world and all contacts in life are made over surfaces. To describe the mechanical behavior of such substances, rheological methods are used. Flow instabilities are a big challenge in rheology since they will be reflected in the macroscopic variables probed, like e. g. the viscosity. Many such discontinuities may actually originate at the surface. Investigating the properties of liquids in contact with the surface under mechanical load is the main course of the thesis. Neutron reflectometry and GISANS are perfect tools in this context to access the solid liquid interfaces, since they can penetrate many engineering materials and show a comparably large scattering potential at deuterated samples. In this thesis shear was applied on a model solution and neutron scattering techniques were used to investigate the structure under load. The focus was set on the development of the measurement methods themselves to enable new scientific insights in the future. First, by stroboscopic measurements the flux limitations are overcome for oscillatory rheology. By reintegration in the post processing it is shown that kinetic measurements with neutrons are possible with a time resolution below one millisecond. Second, the transformation of grazing incidence data from the laboratory system into q-space is strongly non-linear resulting in a need for re-binning. In this thesis a universal tool has been developed for this purpose. Finally, there is an ongoing discussion on depth sensitive neutron scattering experiments from solid-liquid boundaries. By using emission densities we show that such experiments face severe limitations due to the low absorption cross section of the neutron.

  • 25.
    Adlmann, Franz
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Busch, S.
    Vacaliuc, B.
    Nelson, A.
    Ankner, J.F.
    Browning, J.F.
    Parizzi, A.
    Bilheux, J. -K.
    Wolff, Max
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Normalization of stroboscopic neutron scattering experimentsManuskript (preprint) (Annet vitenskapelig)
    Abstract [en]

    Neutron scattering studies of kinetic processes are often ux limited. For processes,which can be repeated many times, this can be mitigated by the so-called strobo-scopic reintegration. The recorded scattering signals are assigned to dierent timeslices of the process and corresponding slices from all repetitions are summed up. Thenormalisation of such data with respect to the incident beam spectrum can be chal-lenging since the incident neutron ux may not necessarily be evenly distributed overall time slices. In this paper we discuss how this can result in misleading informationand a technique to amend for these issues is presented.

  • 26.
    Adlmann, Franz
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Herbel, Jörg
    ETH Zürich, Zürich, Switzerland.
    Korolkovas, Airidas
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Bliersbach, Andreas
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Toperverg, Boris
    Petersburg Nuclear Physics Institute, Gatchina, Russia.
    Van Herck, Walter
    Forschungszentrum Jülich GmbH, Garching, Germany.
    Pálsson, Gunnar K.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Kitchen, Brian
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Wolff, Max
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Depth resolved grazing incidence neutron scattering experiments from semi-infinite interfaces: a statistical analysis of the scattering contributions2018Inngår i: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 30, artikkel-id 165901Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Grazing incidence neutron scattering experiments offer surface sensitivity by reflecting from an interface at momentum transfers close to total external reflection. Under these conditions the penetration depth is strongly non-linear and may change by many orders of magnitude. This fact imposes severe challenges for depth resolved experiments, since the brilliance of neutron beams is relatively low in comparison to e.g. synchrotron radiation. In this article we use probability density functions to calculate the contribution of scattering at different distances from an interface to the intensities registered on the detector. Our method has the particular advantage that the depth sensitivity is directly extracted from the scattering pattern itself. Hence for perfectly known samples exact resolution functions can be calculated and visa versa. We show that any tails in the resolution function, e.g. Gaussian shaped, hinders depth resolved experiments. More importantly we provide means for a descriptive statistical analysis of detector images with respect to the scattering contributions and show that even for perfect resolution near surface scattering is hardly accessible.

  • 27.
    Aghaeipour, Mahtab
    Lund University, Lund, Sweden.
    Tailoring the Optical Response of III-V Nanowire Arrays2017Doktoravhandling, med artikler (Annet vitenskapelig)
    Abstract [en]

    Semiconductor nanowires show a great deal of promise for applications in a wide range of important fields, including photovoltaics, biomedicine, and information technology. Developing these exciting applications is strongly dependent on understanding the fundamental properties of nanowires, such as their optical resonances and absorption spectra. In this thesis we explore optical absorption spectra of arrays of vertical III-V nanowires with a special emphasis on structures optimized to enhance absorption in the solar spectrum. First, we analyze experimentally determined absorption spectra of both indium phosphide (InP) and gallium phosphide (GaP) nanowire arrays. The study provides an intuitive understanding of how the observed absorption resonances in the nanowires may be tuned as a function of their geometrical parameters and crystal structure. As a consequence, the spectral position of absorption resonances can be precisely controlled through the nanowire diameter. However, the results highlight how the blue-shift in the optical absorption resonances as the diameter of the nanowires decreases comes to a halt at low diameters. The stop point is related to the behavior of the refractive indices of the nanowires. The wavelength of the stop is different for nanowire polytypes of similar dimensions due to differences in their refractive indices. We then present a theoretical argument that it is important to consider symmetry properties when tailoring the optical modes excited in the nanowires for enhanced absorption. We show that absorption spectra may be enhanced compared to vertical nanowires at normal incidence by tilting the nanowires with normal incidence light, or by using off-normal incidence with vertical nanowires. This is because additional optical modes inside the nanowires are excited when the symmetry is broken. Looking forward to omnidirectional applications, we consider branched nanowires as a way to enhance the absorption spectra at normal incidence by taking advantage of simultaneous excitation of the spectrally different optical modes in the branches and the stems. Third, we describe in theoretical terms how integrating distributed Bragg reflectors (DBRs) with the nanowires can improve absorption spectra compared to conventional nanowires. DBRs provide a way to employ light trapping mechanisms which increases the optical path length of the excited modes and thereby improves the absorption of the excited modes. At normal incidence, DBR-nanowires improve the absorption efficiency to 78%, compared to 72% for conventional nanowires. We show that the efficiency is increased to 85% for an off-normal incident angle of 50˚. Overall, our results show that studies of optical resonances in nanowires that take the light-matter interaction into account provide opportunities to develop novel optical and optoelectronic functionalities in nanoscience and nanotechnology.

  • 28.
    Aghaeipour, Mahtab
    et al.
    Lund University, Lund, Sweden.
    Pettersson, Håkan
    Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS), Tillämpad matematik och fysik (MPE-lab). Lund University, Lund, Sweden.
    Enhanced Broadband Absorption in Nanowire Arrays with Integrated Bragg Reflectors2018Inngår i: Nanophotonics, ISSN 2192-8614Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    A near-unity unselective absorption spectrum is desirable for high-performance photovoltaics. Nanowire arrays are promising candidates for efficient solar cells due to nanophotonic absorption resonances in the solar spectrum. The absorption spectra, however, display undesired dips between the resonance peaks. To achieve improved unselective broadband absorption, we propose to enclose distributed Bragg reflectors (DBRs) in the bottom and top parts of indium phosphide (InP) nanowires, respectively. We theoretically show that by enclosing only two periods of In0.56Ga0.44As/InPDBRs, an unselective 78% absorption efficiency (72% for nanowires without DBRs)is obtained at normal incidence in the spectral range from 300 nm to 920 nm. Under oblique light incidence, the absorption efficiency is enhanced up to about 85% at an incidence angle of 50º. By increasing the number of DBR periods from two to five, the absorption efficiency is further enhanced up to 95% at normal incidence. In this work we calculated optical spectra for InP nanowires, but the results are expected to be valid for other direct band gap III-V semiconductor materials. We believe that our proposed idea of integrating DBRs in nanowires offers great potential for high-performance photovoltaic applications.

  • 29.
    Aghaeipour, Mahtab
    et al.
    Lund University, Lund, Sweden.
    Pistol, Mats-Erik
    Lund University, Lund, Sweden.
    Pettersson, Håkan
    Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS). Lund University, Lund, Sweden.
    Comparative study of absorption efficiency of inclined and vertical InP nanowires2017Inngår i: Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI / [ed] A. Freundlich, L. Lombez, M. Sugiyama, Bellingham, WA: SPIE - International Society for Optical Engineering, 2017, Vol. 10099, artikkel-id UNSP 100990SKonferansepaper (Fagfellevurdert)
    Abstract [en]

    Geometrically designed III-V nanowire arrays are promising candidates for optoelectronics due to their possibility to excite nanophotonic resonances in absorption spectra. Strong absorption resonances can be obtained by proper tailoring of nanowire diameter, length and pitch. Such enhancement of the light absorption is, however, accompanied by undesired resonance dips at specific wavelengths. In this work, we theoretically show that tilting of the nanowires mitigates the absorption dips by exciting strong Mie resonances. In particular, we derive a theoretical optimum inclination angle of about 30 degrees at which the inclined nanowires gain 8% in absorption efficiency compared to vertically standing nanowires in a spectral region matching the intensity distribution of the sun. The enhancement is due to engineering the excited modes inside the nanowires regarding the symmetry properties of the nanowire/light system without increasing the absorbing material. We expect our results to be important for nanowire-based photovoltaic applications. © 2017 SPIE.

  • 30.
    Aghaeipour, Mahtab
    et al.
    Solid State Physics and NanoLund, Lund University, Lund, Sweden.
    Pistol, Mats-Erik
    Solid State Physics and NanoLund, Lund University, Lund, Sweden.
    Pettersson, Håkan
    Högskolan i Halmstad, Akademin för informationsteknologi, Halmstad Embedded and Intelligent Systems Research (EIS). Solid State Physics and NanoLund, Lund University, Lund, Sweden.
    Considering Symmetry Properties of InP Nanowire/Light Incidence Systems to Gain Broadband Absorption2017Inngår i: IEEE Photonics Journal, ISSN 1097-5764, E-ISSN 1943-0655, Vol. 9, nr 3, artikkel-id 4501310Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Geometrically designed III-V nanowire arrays are promising candidates for disruptive optoelectronics due to the possibility of obtaining a strongly enhanced absorption resulting from nanophotonic resonance effects. With normally incident light on such vertical nanowire arrays, the absorption spectra exhibit peaks that originate from excitation of HE1m waveguide modes in the constituent nanowires. However, the absorption spectra typically show dips between the absorption peaks. Conventionally, such weak absorption has been counteracted by either making the nanowires longer or by decreasing the pitch of the array, both alternatives effectively increasing the volume of absorbing material in the array. Here, we first study two approaches for compensating the absorption dips by exciting additional Mie resonances: 1) oblique light incidence on vertical InP nanowire arrays and 2) normal light incidence on inclined InP nanowire arrays. We then show that branched nanowires offer a novel route to achieve broadband absorption by taking advantage of simultaneous excitations of Mie resonances in the branches and guided HE1m modes in the stem. Finite element method calculations show that the absorption efficiency is enhanced from 0.72 for vertical nanowires to 0.78 for branched nanowires under normal light incidence. Our work provides new insight for the development of novel efficient photovoltaics with high efficiency and reduced active material volume.

  • 31.
    Agnarsson, Björn
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Mikroelektronik och tillämpad fysik, MAP.
    Surface studies on α–sapphire for potential use in GaN epitaxial growth2009Licentiatavhandling, med artikler (Annet vitenskapelig)
    Abstract [en]

    This Licentiate thesis summarizes the work carried out by the author the years 2004 to 2008 at the University of Iceland and the Royal Institute of Technology (KTH) in Sweden. The aim of the project was to investigate the structure of sapphire (alpha-Al2O3) surfaces, both for pure scientific reasons and also for potential use as substrate for GaN-growth by molecular beam epitaxy.

    More generally the thesis describes some surface science methods used for investigating the substrates; the general physical back ground, the experi- mental implementation and what information they can give. The described techniques are used for surface analysis on sapphire substrates which have been treated variously in order to optimize them for use as templates for epi- taxial growth of GaN or related III-V compounds.

    The thesis is based on three published papers.

    The first paper focuses on the formation a thin AlN layer on sapphire, which may act as a buffer layer for potential epitaxial growth of GaN or any related III-V materials. Two types of sapphire substrates (reconstructed and non- reconstructed) were exposed to ammonia resulting in the formation of AlN on the surface. The efficiency of the AlN formation (nitridation efficiency) for the two surfaces was then compared as a function of substrate temperature through photoelectron spectroscopy and low electron energy diffraction. The reconstructed surface showed a much higher nitridation efficiency than the non-reconstructed surface.

    In the second paper, the affect of different annealing processes on the sapphire morphology, and thus its capability to act as a template for GaN growth, was studied. Atomic force microscopy, X-ray diffraction analysis together with ellipsometry measurements showed that annealing in H2 ambient and subse- quent annealing at 1300 °C in O2 for 11 hours resulted in high quality and atomically flat sapphire surface suitable for III-V epitaxial growth.

    The third paper describes the effect of argon sputtering on cleaning GaN surfaces and the possibility of using indium as surfactant for establishing a clean and stoichiometric GaN surface, after such sputtering. Soft sputtering, followed by deposition of 2 ML of indium and subsequent annealing at around 500 °C resulted in a well ordered and clean GaN surface while hard sputtering introduced defects and incorporated both metallic gallium and indium in the surface.

  • 32.
    Agnarsson, Björn
    et al.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Materialfysik, MF.
    Göthelid, Mats
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Materialfysik, MF.
    Olafsson, S.
    Gislason, H. P.
    Karlsson, Ulf O.
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Materialfysik, Materialfysik, MF.
    Influence of initial surface reconstruction on nitridation of Al2O3 (0001) using low pressure ammonia2007Inngår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 101, nr 1, s. 013519-Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The purpose of this study is to investigate the effect of initial surface reconstruction on the nitridation process of Al2O3 (0001). This was done by exposing differently reconstructed sapphire substrates at different temperatures to low pressure ammonia (NH3). Structural and chemical analysis were carried out using low-electron energy diffraction and x-ray photoelectron spectroscopy. The experiments revealed that using low pressure ammonia (P-NH3 < 1 X 10(-5) Torr), no nitridation takes place on (1x1) unreconstructed surfaces. However, when the unreconstructed surface starts to change to a (root 31 x root 31) R +/- 9 degrees reconstructed surface, with increasing substrate temperature, the nitridation becomes successful. When using the initially reconstructed surface, the nitridation is successful even from the lowest temperature used. These results suggest that the initial surface reconstruction has a major effect on the nitridation process. This kinetic behavior has not been reported before, with most nitridation studies mainly focusing on the effect of surface temperature on the resulting surface morphology, rather than the actual kinetics of the process itself.

  • 33. Agterberg, Daniel F.
    et al.
    Garaud, Julien
    KTH, Skolan för teknikvetenskap (SCI), Teoretisk fysik, Kondenserade materiens teori.
    Checkerboard order in vortex cores from pair-density-wave superconductivity2015Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 91, nr 10, artikkel-id 104512Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We consider competing pair-density-wave (PDW) and d-wave superconducting states in a magnetic field. We show that PDW order appears in the cores of d-wave vortices, driving checkerboard charge-density-wave (CDW) order in the vortex cores, which is consistent with experimental observations. Furthermore, we find an additional CDW order that appears on a ring outside the vortex cores. This CDW order varies with a period that is twice that of the checkerboard CDW and it only appears where both PDW and d-wave order coexist. The observation of this additional CDW order would provide strong evidence for PDW order in the pseudogap phase of the cuprates. We further argue that the CDW seen by nuclear magnetic resonance at high fields is due to a PDW state that emerges when a magnetic field is applied.

  • 34.
    Ahlberg, Martina
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Critical Phenomena and Exchange Coupling in Magnetic Heterostructures2012Doktoravhandling, med artikler (Annet vitenskapelig)
    Abstract [en]

    The continuous phase transition in thin magnetic films and superlattices has been studied using the magneto-optical Kerr effect (MOKE) and polarized neutron scattering (PNR).  It has been shown that the critical behavior of amorphous thin films belonging to the 2D XY universality class can be described within the same theory as crystalline sample. This means that quenched disorder only serves as a marginal perturbation in systems with this symmetry.

    The connection between interlayer exchange coupling and the observed critical behavior in Fe/V superlattices was explored. The results prove that the origin of unusually high values of the exponent β can be traced to a position dependence of the magnetization at elevated temperatures. The magnetization of the outermost layers within the superlattice shows a more pronounced decrease at lower temperatures, compared to the inner layers, which in turn have a more abrupt decrease in the vicinity of the critical temperature. This translates to a high exponent, especially when the layers are probed by a technique where more weight is given to the layers close to the surface, e.g.MOKE.  The interlayer exchange coupling as a function of spacer thickness and temperature was also studied in its own right. The data was compared to the literature, and a dependence on the thickness of the magnetic layers was concluded.

    The phase transition in amorphous FeZr/CoZr multilayers, where the magnetization emanates from ferromagnetic proximity effects, was investigated. Even though the determined exponents of the zero-field magnetization, the susceptibility and the critical isotherm did not correspond to any universality class, scaling plots displayed an excellent data collapse.

    Samples consisting of Fe δ-layers (0.3-1.4 monolayers) embedded in Pd were studied using element-specific resonant x-ray magnetic scattering. The magnetization of the two constituents showed distinctly different temperature dependences.

  • 35.
    Ahlberg, Martina
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Andersson, Gabriella
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Hjörvarsson, Björgvin
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Two-dimensional XY-like amorphous Co68Fe24Zr8/Al70Zr30 multilayers2011Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 83, nr 22, s. 224404-Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We present an experimental realization of a magnetic two-dimensional XY system using amorphous materials. The classification of the dimensionality is based on the critical behavior of amorphous Co68Fe24Zr8(d)/Al70O30 (20 angstrom) multilayers, where d = 11 - 16 angstrom. Analysis of the remanent magnetization, the magnetic isotherms, the initial susceptibility, and the magnetic correlation length shows that the magnetic phase transition can be described by the 2D XY model. The samples are not paramagnetic above the critical temperature but are characterized by local magnetic order manifested in the field and temperature dependence of the magnetization. Furthermore, an average spin-spin interaction length of 8.1 angstrom was estimated using the thickness dependence of the Curie temperature.

  • 36.
    Ahlberg, Martina
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Korelis, Panagiotis
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Andersson, Gabriella
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Hjörvarsson, Björgvin
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Effect of ferromagnetic proximity on critical behavior2012Inngår i: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 85, nr 22, s. 224425-1-224425-6Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We have investigated the magnetic phase transition in amorphous Fe93Zr7(x angstrom)/Co95Zr5(1 angstrom) multilayers, where x = 25, 50, and 75. The extremely thin CoZr layer induces magnetic order at temperatures well above the inherent ordering temperature of Fe93Zr7. The changes in the critical exponent beta, associated with the temperature dependence of the magnetization, imply a crossover from two-to three-dimensional behavior as the FeZr thickness is reduced, consistent with a substantial magnetic induction in the FeZr layers. In addition we determined the exponents delta and gamma, of the critical isotherm and the susceptibility, respectively, and their values confirm the nonuniversal character of the phase transition. Scaling of the results yields an excellent data collapse and is found to hold in the crossover regime where the universality hypothesis is not applicable. 

  • 37.
    Ahlberg, Martina
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Papaioannou,, Evangelos Th
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Hjörvarsson, Björgvin
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Temperature dependence of magnetic properties in weakly exchange coupled Fe/V superlattices2013Inngår i: Journal of Magnetism and Magnetic Materials, ISSN 0304-8853, E-ISSN 1873-4766, Vol. 341, s. 142-147Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We use Fe(3)/V(x)Fe(3)/V(x) superlattices, x = 16-27 monolayers (ML) to explore the interlayer exchange coupling (IEC) as a function of both spacer layer thickness and temperature. Fe/V is a common model system for studies addressing the IEC, but the behavior in the weakly exchange coupled regime, complemented with the temperature dependence of the magnetic properties, have remained unexplored. We observe clear regions with ferro- and antiferromagnetic coupling, which is manifested in oscillations in the saturation field, the remanence and the critical temperature. The oscillation in the interlayer coupling (J') has a period of 5.8(1) ML. This is approximate to 0.8 ML smaller than observed for Fe(7)/V(x) superlattices which illustrates the influence of the magnetic layer thickness on the interlayer coupling. The temperature dependence of the remanent magnetization was proven to be significantly affected by the strength of the ferromagnetic coupling, leading to high values of the effective critical exponent beta(eff).

  • 38.
    Ahmad, Mohammed Metwally Gomaa
    et al.
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten. National Research Centre, Egypt.
    Yazdi, Gholamreza
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Schmidt, Susann
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Boshta, M.
    National Research Centre, Egypt.
    Khranovskyy, Volodymyr
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Eriksson, Fredrik
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Tunnfilmsfysik. Linköpings universitet, Tekniska fakulteten.
    Farag, B. S.
    National Research Centre, Egypt.
    Osman, M. B. S.
    Ain Shams University, Egypt.
    Yakimova, Rositsa
    Linköpings universitet, Institutionen för fysik, kemi och biologi, Halvledarmaterial. Linköpings universitet, Tekniska fakulteten.
    Effect of precursor solutions on the structural and optical properties of sprayed NiO thin films2017Inngår i: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 64, s. 32-38Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Nickel oxide thin films were deposited by a simple and low-cost spray pyrolysis technique using three different precursors: nickel nitrate, nickel chloride, and nickel acetate on corning glass substrates. X-ray diffraction show that the NiO films are polycrystalline and have a cubic crystal structure, although predominantly with a preferred 111-orientation in the growth direction and a random in-plane orientation. The deconvolution of the Ni 2p and O 1s core level X-ray photoelectron-spectra of nickel oxides produced by using different precursors indicates a shift of the binding energies. The sprayed NiO deposited from nickel nitrate has an optical transmittance in the range of 60-65% in the visible region. The optical band gap energies of the sprayed NiO films deposited from nickel nitrate, nickel chloride and nickel acetate are 3.5, 3.2 and 3.43 eV respectively. Also, the extinction coefficient and refractive index of NiO films have been calculated from transmittance and reflectance measurements. The average value of refractive index for sprayed films by nickel nitrate, nickel chloride and nickel acetate are 2.1, 1.6 and 1.85 respectively. It is revealed that the band gap and refractive index of NiO films by using nickel nitrate corresponds to the commonly reported values. We attribute the observed behavior in the optical band gap and optical constants as due to the change of the Ni/O ratio.

    Fulltekst tilgjengelig fra 2019-03-16 17:22
  • 39.
    Ahmadi, Sareh
    KTH, Skolan för informations- och kommunikationsteknik (ICT), Material- och nanofysik, Materialfysik, MF.
    Structure-dependent charge transfer at the interafce between organic thin films, and metals and metal oxides2013Doktoravhandling, med artikler (Annet vitenskapelig)
    Abstract [en]

    The purpose of the research work, presented in this thesis is to offer a detailed atomic level study of interfaces created by adsorption of organic molecules on metals and metal oxides to point out significant impact of substrate, dye structure as well as different mediators on the charge transfer at these interfaces, which is proven to influence the device performance to a great extent.

    Adsorption of organic photosensitive molecules on metals and metal-oxides is the main focus of this thesis. Phthalocyanines which are organic semiconductors offer a broad range of properties, such as thermal and chemical stability, high charge mobility and strong absorption coefficient in the visible and near-IR regions, which make them very attractive to be applied in various systems and devices. Fuel cells, organic field-effect transistors (OFETs), organic light emitting diodes (OLEDs) and solar cells are examples of phthalocyanine’s applications. The main focus of this work is to characterize the interfaces of Dye Sensitized Solar Cells (DSSCs).

    DSSC was invented by Michael Grätzel and Brian O’Regan in 1988. At the heart of this cell there is an oxide which is coated by a photosensitive dye. Under illumination, an electron is excited from HOMO to LUMO of the molecule, which can be further transferred to the conduction band of the oxide by a proper energy level alignment. The original state of the dye is regenerated by electron donation via the electrolyte, which usually is an organic solvent containing a redox couple e.g., iodide/triiodide. The iodide is regenerated by reduction of triiodide at the counter electrode. To improve the functionality of the cell, different additives can be added to the electrolyte.

    To mimic the interfaces of this cell, molecular layers of MPc (M: Fe, Zn, Mg) are adsorbed on both metallic surfaces, Au(111) and Pt(111), and rutile TiO2(110). Layers of iodine were inserted between metallic substrates and dyes to investigate the electronic properties and charge transfer at these multi-interface systems. 4-tert-butyl pyridine is a significant additive to the electrolyte and has proven to enhance the cell’s performance. This molecule was also adsorbed on Pt(111) and TiO2(110). Phthalocyanines were deposited by organic molecular beam deposition and 4TBP was evaporated at room temperature. Surface structures and reconstructions were confirmed by LEED measurements. Surface sensitive synchrotron radiation based spectroscopy methods, XPS and NEXAFS were applied to characterize these surfaces and interfaces. STM images directly give a topographical and electronic map over the surface. All measurements were carried out in UHV condition.

    When MPc was adsorbed on Au(111) and TiO2(110), charge transfer from molecule to substrate is suggested, while the opposite holds for MPc adsorbed on Pt(111). Moreover, stronger interaction between MPc and Pt(111) and TiO2(110) compared to Au(111) also demonstrates the effect of substrate on the charge transfer at the interface. The stronger interaction observed for these two substrates disturbed the smooth growth of a monolayer; it also resulted in bending of the molecular plane. Interaction of MPc with metallic surfaces was modified by inserting iodine at the interface. Another substrate-related effect was observed when MgPc was adsorbed on TiO2(110);  and -cross linked surfaces, where the surface reconstruction directly affect the molecular configuration as well as electronic structure at the interface. Besides, it is shown that the d-orbital filling of the central metal atom in MPc plays an important role for the properties of the molecular layer as well as charge transfer at the interface.

    Upon adsorption of 4TBP on Pt(111), C-H bond is dissociatively broken and molecules is adsorbed with N atoms down. Modification of surface by iodine, prevent this dissociation. In the low coverage of iodine, there is a competition between 4TBP and iodine to directly bind to Pt(111). Investigation on the adsorption of 4TBP on TiO2(110) illustrated that these molecules in low coverage regime, prefer the oxygen vacancy sites and their adsorption on these sites, results in a downward band bending at the substrate’s surface. 

  • 40.
    Ahmadi, Sareh
    et al.
    Materialfusik,KTH-Electrum.
    Shariati, Masumeh-Nina
    Yu, Shun
    Göthelid, Mats
    Charge transfer and chemical interaction of ZnPc and FePc with Au(111)Manuskript (preprint) (Annet vitenskapelig)
  • 41.
    Ahmed, Rizwan
    et al.
    Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE).
    Abbas, Shahid
    Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE).
    Electrical and Optical Characteristics of InP Nanowires based p-i-n Photodetectors2010Independent thesis Advanced level (degree of Master (One Year)), 10 poäng / 15 hpOppgave
    Abstract [en]

    Photodetectors are a kind of semiconductor devices that convert incoming light to an electrical signal. Photodetectors are classified based on their different structure, fabrication technology, applications and different sensitivity. Infrared photodetectors are widely used in many applications such as night vision, thermal cameras, remote temperature sensing, and medical diagnosis etc.

     

    All detectors have material inside that is sensitive to incoming light. It will absorb the photons and, if the incoming photons have enough energy, electrons will be excited to higher energy levels and if these electrons are free to move, under the effect of an external electric field, a photocurrent is generated.

     

    In this project Fourier Transform Infrared (FT-IR) Spectroscopy is used to investigate a new kind of photodiodes that are based on self-assembled semiconductor nanowires (NWs) which are grown directly on the substrate without any epi-layer. The spectrally resolved photocurrent (at different applied biases) and IV curves (in darkness and illumination) for different temperatures have been studied respectively. Polarization effects (at low and high Temperatures) have been investigated.  The experiments are conducted for different samples with high concentration of NWs as well as with lower concentration of NWs in the temperature range from 78 K (-195ºC) to 300 (27ºC). These photodiodes are designed to work in near infrared (NIR) spectral range.

     

    The results show that the NW photodetectors indeed are promising devices with fairly high break down voltage, change of photocurrent spectra with polarized light, low and constant reverse saturation current (Is). The impact of different polarized light on photocurrent spectra has been investigated and an attempt has been made to clarify the observed double peak of InP photocurrent spectrum. Our investigations also include a comparison to a conventional planar InP p-i-n photodetector.

     

  • 42. Ahola-Tuomi, M.
    et al.
    Punkkinen, Marko Patrick John
    KTH, Skolan för industriell teknik och management (ITM), Materialvetenskap.
    Laukkanen, P.
    Kuzmin, M.
    Lang, J.
    Schulte, K.
    Pietzsch, A.
    Perala, R. E.
    Rasanen, N.
    Vayrynen, I. J.
    Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations2011Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 83, nr 24, s. 245401-Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.

  • 43.
    Aijaz, Asim
    et al.
    Linkoping Univ, Dept Phys Chem & Biol, IFM Mat Phys, SE-58183 Linkoping, Sweden.;Uppsala Univ, Dept Engn Sci, Angstrom Lab, POB 534, SE-75121 Uppsala, Sweden..
    Louring, Sascha
    Aarhus Univ, Interdisciplinary Nanosci Ctr iNANO, Ny Munkegade 120, DK-8000 Aarhus C, Denmark.;Danish Technol Inst, Tribol Ctr, Teknol Pk,Kongsvang Alle 29, DK-8000 Aarhus C, Denmark..
    Lundin, Daniel
    Univ Paris Saclay, Univ Paris Sud, LPGP, CNRS,UMR 8578, F-91405 Orsay, France..
    Kubart, Tomas
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Jensen, Jens
    Linkoping Univ, Dept Phys Chem & Biol, IFM Mat Phys, SE-58183 Linkoping, Sweden..
    Sarakinos, Kostas
    Linkoping Univ, Dept Phys Chem & Biol, IFM Mat Phys, SE-58183 Linkoping, Sweden..
    Helmersson, Ulf
    Linkoping Univ, Dept Phys Chem & Biol, IFM Mat Phys, SE-58183 Linkoping, Sweden..
    Synthesis of hydrogenated diamondlike carbon thin films using neon-acetylene based high power impulse magnetron sputtering discharges2016Inngår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 34, nr 6, artikkel-id 061504Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Hydrogenated diamondlike carbon (DLC:H) thin films exhibit many interesting properties that can be tailored by controlling the composition and energy of the vapor fluxes used for their synthesis. This control can be facilitated by high electron density and/or high electron temperature plasmas that allow one to effectively tune the gas and surface chemistry during film growth, as well as the degree of ionization of the film forming species. The authors have recently demonstrated by adding Ne in an Ar-C high power impulse magnetron sputtering (HiPIMS) discharge that electron temperatures can be effectively increased to substantially ionize C species [Aijaz et al., Diamond Relat. Mater. 23, 1 (2012)]. The authors also developed an Ar-C2H2 HiPIMS process in which the high electron densities provided by the HiPIMS operation mode enhance gas phase dissociation reactions enabling control of the plasma and growth chemistry [Aijaz et al., Diamond Relat. Mater. 44, 117 (2014)]. Seeking to further enhance electron temperature and thereby promote electron impact induced interactions, control plasma chemical reaction pathways, and tune the resulting film properties, in this work, the authors synthesize DLC: H thin films by admixing Ne in a HiPIMS based Ar/C2H2 discharge. The authors investigate the plasma properties and discharge characteristics by measuring electron energy distributions as well as by studying discharge current characteristics showing an electron temperature enhancement in C2H2 based discharges and the role of ionic contribution to the film growth. These discharge conditions allow for the growth of thick (>1 mu m) DLC: H thin films exhibiting low compressive stresses (similar to 0.5 GPa), high hardness (similar to 25 GPa), low H content (similar to 11%), and density in the order of 2.2 g/cm(3). The authors also show that film densification and change of mechanical properties are related to H removal by ion bombardment rather than subplantation.

  • 44.
    Aikebaier, Faluke
    Linnéuniversitetet, Fakulteten för teknik (FTK), Institutionen för fysik och elektroteknik (IFE).
    Effects of electron-electron interaction in pristine and doped graphene2014Independent thesis Advanced level (degree of Master (Two Years)), 30 poäng / 45 hpOppgave
    Abstract [en]

    The goal of this master thesis is to investigate the eect of electron-electron interaction on electronic properties of graphene that can be measured experimentally. A tight-binding model, which includes up to next-nearest-neighbor hopping, with parameters tted to density functional theory calculations, has been used to describe the electronic structure of graphene. The electron-electron interaction is described by the Hubbard model using a mean- eld approximation. Based on the analysis of dierent tight-binding models available in the literature, we conclude that a next-nearest-neighbor tight-binding model is in better agreement with density functional theory calculations, especially for the linear dispersion around the Dirac point. The Fermi velocity in this case is very close to the experimental value, which was measured by using a variety of techniques. Interaction-induced modi cations of the linear dispersion around the Dirac point have been obtained. Unlike the non-local Hartree-Fock calculations, which take into account the long-range electron-electron interaction and yield logarithmic corrections, in agreement with experiment, we found only linear modi cations of the Fermi velocity. The reasons why one cannot obtain logarithmic corrections using the mean- eld Hubbard model have been discussed in detail. The remaining part of the thesis is focused on calculations of the local density of states around a single substitutional impurity in graphene. This quantity can be directly compared to the results of the scanning tunneling microscopy in doped graphene. We compare explicitly non-interacting and interacting cases. In the latter case, we performed self-consistent calculations, and found that electron-electron interaction has a signi cant eect on the local density of states. Furthermore, the band gap at high-symmetry points of the Brillouin zone of a supercell, triggered by the impurity, is modi ed by interactions. We use a perturbative model to explain this eect and quantitative agreement with numerical results. In conclusion, it is expected that the long-range electron-electron nteraction is extremely strong and important in graphene. However, as this thesis has shown, interactions at the level of the Hubbard model and mean- eld approximation also introduce corrections to the electronic properties of graphene.

     

  • 45.
    Aikebaier, Faluke
    et al.
    Linnéuniversitetet, Fakulteten för teknik (FTK), Institutionen för fysik och elektroteknik (IFE).
    Pertsova, Anna
    Linnéuniversitetet, Fakulteten för teknik (FTK), Institutionen för fysik och elektroteknik (IFE).
    Canali, Carlo M.
    Linnéuniversitetet, Fakulteten för teknik (FTK), Institutionen för fysik och elektroteknik (IFE).
    Effects of short-range electron-electron interactions in doped graphene2015Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 92, nr 15, artikkel-id 155420Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    We study theoretically the effects of short-range electron-electron interactions on the electronic structure of graphene, in the presence of substitutional impurities. Our computational approach is based on the π orbital tight-binding model for graphene, with the electron-electron interactions treated self-consistently at the level of the mean-field Hubbard model. The finite impurity concentration is modeled using the supercell approach. We compare explicitly noninteracting and interacting cases with varying interaction strength and impurity potential strength. We focus in particular on the interaction-induced modifications in the local density of states around the impurity, which is a quantity that can be directly probed by scanning tunneling spectroscopy of doped graphene. We find that the resonant character of the impurity states near the Fermi level is enhanced by the interactions. Furthermore, the size of the energy gap, which opens up at high-symmetry points of the Brillouin zone of the supercell upon doping, is significantly affected by the interactions. The details of this effect depend subtly on the supercell geometry. We use a perturbative model to explain these features and find quantitative agreement with numerical results.

  • 46. Airiskallio, E.
    et al.
    Nurmi, E.
    Heinonen, M. H.
    Vayrynen, I. J.
    Kokko, K.
    Ropo, M.
    Punkkinen, M. P. J.
    Pitkanen, H.
    Alatalo, M.
    Kollar, J.
    Johansson, Börje
    KTH, Skolan för industriell teknik och management (ITM), Materialvetenskap, Tillämpad materialfysik.
    Vitos, Levente
    KTH, Skolan för industriell teknik och management (ITM), Materialvetenskap, Tillämpad materialfysik.
    Third element effect in the surface zone of Fe-Cr-Al alloys2010Inngår i: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 81, nr 3Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    The third element effect to improve the high temperature corrosion resistance of the low-Al Fe-Cr-Al alloys is suggested to involve a mechanism that boosts the recovering of the Al concentration to the required level in the Al-depleted zone beneath the oxide layer. We propose that the key factor in this mechanism is the coexistent Cr depletion that helps to maintain a sufficient Al content in the depleted zone. Several previous experiments related to our study support that conditions for such a mechanism to be functional prevail in real oxidation processes of Fe-Cr-Al alloys.

  • 47. Ajuria, Jon
    et al.
    Arnaiz, Maria
    Botas, Cristina
    Carriazo, Daniel
    Mysyk, Roman
    Rojo, Teofilo
    Talyzin, Alexandr V.
    Umeå universitet, Teknisk-naturvetenskapliga fakulteten, Institutionen för fysik.
    Goikolea, Eider
    Graphene-based lithium ion capacitor with high gravimetric energy and power densities2017Inngår i: Journal of Power Sources, ISSN 0378-7753, E-ISSN 1873-2755, Vol. 363, s. 422-427Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Hybrid capacitor configurations are now of increasing interest to overcome the current energy limitations of supercapacitors. In this work, we report a lithium ion capacitor (LIC) entirely based on graphene. On the one hand, the negative-battery-type- electrode consists of a self-standing, binder-free 3D macroporous foam formed by reduced graphene oxide and decorated with tin oxide nanoparticles (SnO2-rGO). On the other hand, the positive-capacitor-type- electrode is based on a thermally expanded and physically activated reduced graphene oxide (a-TEGO). For comparison purposes, a symmetric electrical double layer capacitor (EDLC) using the same activated graphene in 1.5 M Et4NBE4/ACN electrolyte is also assembled. Built in 1 M LiPF6 EC:DMC, the graphene-based LIC shows an outstanding, 10-fold increase in energy density with respect to its EDLC counterpart at low discharge rates (up to 200 Wh kg(-1)). Furthermore, it is still capable to deliver double the energy in the high power region, within a discharge time of few seconds.

  • 48.
    Akansel, Serkan
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Magnetization Dynamics in Ferromagnetic Thin Films: Evaluation of Different Contributions to Damping in Co2FeAl and FeCo Film Structures2018Doktoravhandling, med artikler (Annet vitenskapelig)
    Abstract [en]

    Static and dynamic magnetic properties of Co2FeAl and Fe65Co35 alloys have been investigated. Co2FeAl films were deposited at different temperatures and the deposition parameters were optimized with respect to structural and magnetic properties. As a result, a film with B2 crystalline phase was obtained without any post-annealing process. A lowest magnetic damping parameter of  was obtained for the film deposited at 573K. This obtained low value is comparable to the lowest values reported in research literature.  After optimizing the deposition parameters of this alloy, different seed layers and capping layers were added adjacent to the Co2FeAl layer and the effect of these layers on the magnetic relaxation was investigated. In addition to adding nonmagnetic layers to Co2FeAl, the dependence of the magnetic damping parameter with respect to the thickness of Co2FeAl was investigated by depositing films with different thicknesses. A temperature dependent study of the magnetic damping parameter was also performed and the measured damping parameters were compared with theoretically calculated intrinsic Gilbert damping parameters. Different extrinsic contributions to the magnetic damping, such as two magnon scattering, spin pumping, eddy-current damping and radiative damping, were identified and subtracted from the experimentally obtained damping parameter. Hence, it was possible to obtain the intrinsic damping parameter, that is called the Gilbert damping parameter.

    In the second part of the thesis, Fe65Co35 alloys were investigated in terms of static and dynamic magnetic properties. Fe65Co35 films were deposited without and with different seed layers in order to first understand the effect of the seed layer on static magnetic properties of the films, such as the coercivity of the films. Then the films with seed layers yielding the lowest coercivity were investigated in terms of dynamic magnetic properties. Fe65Co35 films with different rhenium dopant concentrations and with ruthenium as the seed and capping layer were also investigated. The purpose of this study was to increase the damping parameter of the films and an increase of about ~230% was obtained by adding the dopant to the structure. This study was performed at different temperatures and after subtraction of the extrinsic contributions to the damping, the experimental values were compared with theoretically calculated values of the Gilbert damping parameter. During the thesis work, magnetic looper and superconducting quantum interference device magnetometers set-ups were used for static magnetic measurements and cavity, broadband in-plane and broadband out-of-plane ferromagnetic resonance set-ups were used for dynamic measurements.

  • 49.
    Akansel, Serkan
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Kumar, Ankit
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Behera, Nilamani
    Husain, SAjid
    Brucas, Rimantas
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Chaudhary, Sujeet
    Svedlindh, Peter
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Thickness dependent enhancement of damping in Co2FeAl/β-Ta thin films2018Inngår i: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, nr 13, s. 134421-Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    In the present work Co2FeAl (CFA) thin films were deposited by ion beam sputtering on Si (100) substrates at the optimized deposition temperature of 300°C. A series of CFA films with different thickness (tCFA ); 8, 10, 12, 14, 16, 18 and 20 nm were prepared and all samples were capped with a 5 nm thick b-Ta layer. The thickness dependent static and dynamic properties of the films were studied by SQUID magnetometry, in-plane as well as out-of-plane broadband VNA-FMR measurements and angle dependent cavity FMR measurements. The saturation magnetization and the coercive field were found to be weakly thickness dependent and lie in the range 900 – 950 kA/m and 0.53 – 0.87 kA/m, respectively. The effective damping parameter ( αeff) extracted from in-plane and out-of-plane FMR results reveal a 1/tCFA dependence, the values for the in-plane αeff being larger due to two-magnon scattering (TMS). The origin of the αeff thickness dependence is spin pumping into the non-magnetic b-Ta layer and in case of the in-plane  αeff also a thickness dependent TMS contribution. From the out-of-plane FMR results, it was possible to disentangle the different contributions to αeff   and to the extract values for the intrinsic Gilbert damping (αG ) and the effective spin-mixing conductance (g_eff^↑↓ ) of the CFA/ b-Ta interface, yielding αG=1.1X10-3 and g_eff^↑↓=2.90x1019 m-2.

  • 50.
    Akansel, Serkan
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Kumar, Ankit
    Venugopal, Vijayaharan
    Banerjee, Rudra
    Autieri, Carmine
    Brucas, Rimantas
    Behera, Nilamani
    Sortica, Mauricio
    Primetzhofer, Daniel
    Basu, Swaraj
    Gubbins, Mark
    Sanyal, Biplab
    Svedlindh, Peter
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Enhanched Gilbert Damping in Re doped FeCo Films: A combined experimental and theoretical studyManuskript (preprint) (Annet vitenskapelig)
    Abstract [en]

    The effects of rhenium doping in the range 0 – 10 at% on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first principles electronic structure calculations focussing on the change of the saturation magnetization (Ms ) and the Gilbert damping parameter (α ). Both experimental and theoretical results show that Ms decreases with increasing Re doping level, while at the same time α increases.  The experimental low temperature saturation magnetic induction exhibits a 29% decrease, from 2.31T to 1.64T, in the investigated doping concentration range, which is more than predicted by the theoretical calculations. The room temperature value of the damping parameter obtained from ferromagnetic resonance measurements, correcting for extrinsic contributions to the damping, is for the undoped sample 2.7X103, which is close to the Gilbert damping parameter extracted from the theoretical calculations. The room temperature experimental value for the damping parameter increases to  9X103 when doping with 10 at% Re; the corresponding increase of the Gilbert damping parameter obtained from theoretical calculations is 7.3X103. Both experimental and theoretical values for the damping parameter weakly decrease with decreasing temperature.

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