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  • 1. Ahlfeldt, H.
    et al.
    Holm, J.
    Lindgren, S.
    Backlin, L.
    Vieider, C.
    Klinga, T.
    Kerzar, B.
    Nilsson, M.
    Svensson, M.
    Nilsson, S.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    20 GHz bandwidth of lasers flip-chip-mounted on microstructured carriers with integrated electrical waveguides1998In: Optical Communication, 1998. 24th European Conference on, 1998, Vol. 1, p. 205-206Conference paper (Refereed)
    Abstract [en]

    A flip-chip-mounting scheme for high-speed lasers has been realised. The mounting scheme involves a microstructured silicon carrier with integrated membrane transmission lines and self-aligning solder bumps

  • 2. Akram, M. N.
    et al.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
    Marcinkevicius, Saulius
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
    Berggren, J.
    Experimental evaluation of carrier transport, gain, T0 and chirp of 1.55 mm MQW structures with different barrier compositions2005In: 31st European Conference on Optical Communications (ECOC 2005), 2005, Institution of Engineering and Technology, 2005, Vol. 2005, no CP502, p. 297-298Conference paper (Refereed)
    Abstract [en]

    Direct carrier transport measurements were performed for different InGaAsP/InGaAlAs MQW test structures. Shallow InGaAlAs barrier QW showed faster carrier transport. Semi-insulating regrown FP lasers with InGaAlAs barrier QW showed improved high temperature operation, modal gain, differential modal gain and chirp.

  • 3. Akram, N. M.
    et al.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Marcinkevicius, Saulius
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Experimental evaluation of carrier transport, gain, T0 and chirp of 1.55 mu;m MQW structures with different barrier compositions2005In: Optical Communication, 2005. ECOC 2005. 31st European Conference on, 2005, Vol. 2, p. 297-298Conference paper (Refereed)
    Abstract [en]

    Direct carrier transport measurements were performed for different InGaAsP/InGaAlAs MQW test structures. Shallow InGaAlAs barrier QW showed faster carrier transport. Semi-insulating regrown FP lasers with InGaAlAs barrier QW showed improved high temperature operation, modal gain, differential modal gain and chirp.

  • 4.
    Akram, Nadeem
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Berrier, Audrey
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Experimental characterization of high-speed 1.55 mu m buried heterostructure InGaAsP/InGaAlAs quantum-well lasers2009In: Journal of the Optical Society of America. B, Optical physics, ISSN 0740-3224, E-ISSN 1520-8540, Vol. 26, no 2, p. 318-327Article in journal (Refereed)
    Abstract [en]

    Detailed experimental characterization is performed for 1550 nm semi-insulating regrown buried heterostructure Fabry-Perot (FP) lasers having 20 InGaAsP/InGaAlAs strain-balanced quantum wells (QWs) in the active region. Light-current-voltage performance, electrical impedance, small-signal response below and above threshold, amplified spontaneous emission spectrum below threshold and relative intensity noise spectrum are measured. Different laser parameters such as external differential quantum efficiency eta(d), background optical loss alpha(i), K-factor, D-factor, characteristic temperature T-0, differential gain dg/dn, gain-compression factor epsilon, carrier density versus current, differential carrier lifetime tau(d), optical gain spectrum below threshold, and chirp parameter alpha are extracted from these measurements. The FP lasers exhibited a high T-0 (78-86.5 degrees C) and very high-resonance frequency (23.7 GHz). The results indicate that appropriately designed lasers having a large number of InGaAsP well/InGaAlAs barrier QWs with shallow valence-band discontinuity can be useful for un-cooled high-speed direct-modulated laser applications.

  • 5.
    Akram, Nadeem
    et al.
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berrier, Audrey
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    High-Speed Performance of 1.55 µm Buried Hetero-Structure Lasers with 20 InGaAsP/InGaAlAs Quantum-Wells2006In: 2006 European Conference on Optical Communications Proceedings, ECOC 2006, IEEE , 2006, p. 1-2Conference paper (Refereed)
    Abstract [en]

    1550 nm re-grown FP lasers having 20 InGaAsP/InGaAlAs strain-balanced QWs exhibit low threshold current density, high T0 (78.0 #x000B0;C) and high resonance frequency (24 GHz) indicating that a large number of shallow barrier QWs are attractive for un-cooled high-speed direct-modulation applications.

  • 6.
    Akram, Nadeem
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Marcinkevičius, Saulius
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Olsson, Fredrik
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    The effect of barrier composition on the vertical carrier transport and lasing properties of 1.55-mu m multiple quantum-well structures2006In: IEEE Journal of Quantum Electronics, ISSN 0018-9197, E-ISSN 1558-1713, Vol. 42, no 7, p. 713-714Article in journal (Refereed)
    Abstract [en]

    In this paper, the effect of barrier bandgap and composition on the optical performance of 1.55-mu m InGaAsP/In-GaAsP and InGaAsP/InGaAlAs multiple quantum-well structures and Fabry-Perot lasers is evaluated experimentally. Direct vertical carrier transport measurements were performed through strain-compensated multiple quantum-well (MQW) test structures using femto-second laser pulse excitation and time-resolved photoluminescence up-conversion method. MQW test structures were grown with different barrier composition (InGaAsP and InGaAlAs) and barrier bandgap (varied from lambda(g) = 1440 to 1260 nm) having different conduction band Delta E-c and valence band discontinuity Delta E-v, while keeping the same InGaAsP well composition for all the structures. The ambipolar carrier transport was found to be faster in the structures with lower valence band discontinuity Delta E-v. Regrown semi-insulating buried heterostructure Fabry-Perot (SIBH-FP) lasers were fabricated from similar QWs and their static light-current-voltage characteristics (including optical gain and chirp spectra below threshold) and thermal characteristics were measured. Lasers with InGaAlAs barrier showed improved high-temperature operation, higher optical gain, higher differential gain, and lower chirp, making them suitable candidates for high-bandwidth directly modulated uncooled laser applications.

  • 7.
    Akram, Nadeem
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Influence of electrical parasitics and drive impedance on the laser modulation response2004In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 16, no 1, p. 21-23Article in journal (Refereed)
    Abstract [en]

    In this letter, we analyze the effects of electrical parasitics and drive impedance on the laser modulation response. It is found that for lasers with small active-region volume, e.g., vertical-cavity surface-emitting lasers, the finite drive impedance and/or the laser parasitic capacitance can significantly enhance the damping of the laser resonance peak at low bias. This is due to the voltage fluctuations across the laser diode active layer during modulation. It is also shown that the real pole of the small-signal response transfer function corresponding to the laser parasitic cutoff frequency is not fixed but decreases with the increased bias level.

  • 8.
    Akram, Nadeem
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Silfvenius, Christofer
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Material Physics (Closed 20120101), Semiconductor Materials, HMA (Closed 20120101).
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Design optimization of InGaAsP-InGaAlAs 1.55 mu;m strain-compensated MQW lasers for direct modulation applications2004In: Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on, IEEE , 2004, p. 418-421Conference paper (Refereed)
    Abstract [en]

    A comprehensive simulation study of InGaAsP (well)/InGaAlAs(barrier) 1.55 mu;m strain-compensated MQW lasers is presented. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and strain of the barriers and p-doping in the active region. Some preliminary results are also presented for the manufactured lasers using these QWs indicating a good material platform.

  • 9.
    Akram, Nadeem
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Silfvenius, Christofer
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Design optimization of InGaAsP-InGaAlAs 1.55 mu m strain-compensated MQW lasers for direct modulation applications2004In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 19, no 5, p. 615-625Article in journal (Refereed)
    Abstract [en]

    In this paper, a simulation study of InGaAsP(well)/InGaAlAs(barrier) 1.55 mum strain-compensated multi-quantum well (MQW) lasers is presented. Due to a large conduction band discontinuity in this material system, a higher material gain and differential gain can be obtained from such a quantum well (QW) as compared to a traditional InGaAsP/InGaAsP quantum well. The deeper electron well should also improve elevated temperature operating characteristics and reduce the electron spillover from QWs. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and the strain in the barriers. A large number of quantum wells can be uniformly pumped, reducing the carrier density in each individual well. A uniform and low carrier density in all the wells help reduce the total Auger recombination current. High p-doping in the active region is shown to enhance the carrier and gain non-uniformity in the MQWs. A simulated high modulation bandwidth has been demonstrated, promising directly modulated lasers as a low-cost source for short to medium distance (1-10 km) high speed optical links.

  • 10.
    Almström, Erland
    et al.
    KTH, Superseded Departments, Electronics.
    Kjebon, Olle
    KTH, Superseded Departments, Electronics.
    10Gb/s over 60 km standard single mode fibre at 1.55 μm with a direct modulated DBR laser1998In: Conference on optical fiber communication, feb 22-27, San Jose, CA, USA, 1998Conference paper (Other academic)
  • 11.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Optics and Photonics (Closed 20120101), Photonics (Closed 20120101).
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Sundgren, Petrus
    Marcks von Würtemberg, Rikard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    1.3 um InGaAs VCSELs: Influence of the Large Gain-Cavity Detuning on the Modulation and Static Performance2004In: Proc. of 30th European Conference on Optical Communication 2004, 2004Conference paper (Refereed)
  • 12.
    Chacinski, Marek G.
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Isaksson, Mats
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Wang, Qin
    Effects of detuned loading on the modulation performance of widely tunable MG-Y lasers2008In: Semiconductor Lasers And Laser Dynamics III / [ed] Panajotov, KP; Sciamanna, M; Valle, AA; Michalzik, R, 2008, Vol. 6997, p. 99709-99709Conference paper (Refereed)
    Abstract [en]

    The Detuning Loading Effect, i.e., the effects of the modulation performance on the position of the lasing mode relative to the Bragg reflection peak, is investigated in a Modulated Grating Y-branch laser. By proper adjustment of the lasing mode position, simultaneous chirp reduction and modulation bandwidth enhancement can be obtained. The lasing mode position is also crucial for side mode suppression ratio and output power.

  • 13.
    Chacinski, Marek
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Detuned-loading effects on directly-modulated high-speed lasers2004In: 2004 International Students and Young Scientists Workshop Photonics and Microsystems, Proceedings / [ed] Dylewicz, R; Patela, S, NEW YORK: IEEE , 2004, p. 7-7Conference paper (Refereed)
    Abstract [en]

    The modulation bandwidth and linewidth enhancement factor were investigated and found to be strongly dependent on the position of the lasing mode on the Bragg reflection peak.

  • 14.
    Chacinski, Marek
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Directly modulated lasers detuned loading effect2004In: 2004 International Students and Young Scientists Workshop - Photonics and Microsystems, 2004, p. 1-21Conference paper (Refereed)
  • 15.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hammar, Mattias
    KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
    Marcks von Würtemberg, Rickard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Mogg, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Sundgren, Petrus
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Berggren, Jesper
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Single-mode 1.27 μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics2005In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 21, p. 211109-1-211109-3Article in journal (Refereed)
    Abstract [en]

    The dynamic performance of InGaAs/GaAs 1.27 μ m single-mode vertical cavity surface emitting lasers (VCSELs) is presented. In order to reach such a long wavelength, the devices utilize highly strained double-quantum wells and a large detuning between the material gain peak and cavity resonance. It is found that the large detuning improves the temperature stability of both static and modulation characteristics. A resonance frequency of 7.8-9.5 GHz and optical power of 0.30 mW in fiber was maintained throughout the investigated temperature range of 20-90 ° C. The intrinsic response of the device suggests that long-wavelength InGaAs/GaAs VCSELs have the potential to be used as low cost uncooled optical transmitters at 10 Gbit/s. © 2005 American Institute of Physics. © 2005 American Institute of Physics.

  • 16.
    Chacinski, Marek
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Scholes, A.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Ericsson, P
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Isaksson, Mats
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Hammerfeldt, S.
    A silicon optical bench for flip chip mounting of widely tunable modulated grating Y-branch lasers2005In: CAOL 2005: Proceedings of the 2nd International Conference on Advanced Optoelectronics and Lasers, Vol 1 / [ed] Sukhoivanov, IA, 2005, p. 64-66Conference paper (Refereed)
    Abstract [en]

    A silicon optical bench for flip chip mounted widely tunable lasers is presented. Its impact on the static and dynamic characteristics of the laser device is evaluated and compared with a conventional aluminium nitride carrier.

  • 17. Gerschutz, F.
    et al.
    Fischer, M.
    Koeth, J.
    Chacinski, M.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Kovsh, A.
    Krestnikov, I.
    Forchel, A.
    Temperature insensitive 1.3 mu m InGaAs/GaAs quantum dot distributed feedback lasers for 10 Gbit/s transmission over 21 km2006In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 42, no 25, p. 1457-1458Article in journal (Refereed)
    Abstract [en]

    Long wavelength monomode InGaAs/GaAs quantum dot (QD) distributed feedback (DFB) lasers with emission wavelength around 1325 ran are presented. Threshold currents below 19 mA for operating temperatures up to 70 degrees C and Output powers of 10 mW at 25 degrees C (6 mW at 70 degrees C) are observed. Error-free 10 Gbit/s transmission over 21 kin fibre with an extinction ratio of 8.5 dB at room temperature (5.1 dB at 70 degrees C) is demonstrated. The low threshold, low temperature sensitivity and high modulation speed were realised using complex coupled DFB lasers with ten stacks of self-organised MBE-grown QD layers and p-type modulation doping.

  • 18. Isaksson, M.
    et al.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Wesstrom, J. -O
    10 Gb/s direct modulation of 40 nm tunable modulated-grating Y-branch laser2005In: Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC, 2005, Vol. 2, p. 117-119Conference paper (Refereed)
    Abstract [en]

    High speed properties of a directly modulated widely tunable MG-Y laser have been evaluated. Small signal response and 10 Gb/s NRZ modulation were performed within the 40 nm tuning range.

  • 19.
    Isaksson, Mats
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Chacinski, Marek
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Wesström, J. -O
    10 Gb/s direct modulation of 40 nm tunable modulated-grating Y-branch laser2006In: OFC/NFOEC Technical Digest, Optical Society of America, 2006Conference paper (Refereed)
    Abstract [en]

    High speed properties of a directly modulated widely tunable MG-Y laser have been evaluated. Small signal response and 10 Gb/s NRZ modulation were performed within the 40 nm tuning range.

  • 20.
    Karlsson, Stefan E.
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Yu, Yichuan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Liu, C. P.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Chuang, C. H.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Tsegaye, T.
    Seeds, A. J.
    Low cost packaging of a reflective electroabsorption Modulator/Detector with optimized spurious free dynamic range - art. no. 61850M2006In: Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration / [ed] Thienpont, H; Taghizadeh, MR; Daele, P; Mohr, J, BELLINGHAM, WA: SPIE-INT SOC OPTICAL ENGINEERING , 2006, Vol. 6185, p. M1850-M1850Conference paper (Refereed)
    Abstract [en]

    A packaged high speed reflective electroabsorption transceivers for radio-over-fiber applications is demonstrated. The transceiver, an AFPMD (Asymmetric vertically addressed Fabry-Perot Modulator/Detector), is successfully packaged into a standard module, originally intended for 10 Gbit/s Ethernet detectors. The packaging process and the electrical, optical and thermal performance of the packaged component are presented. A bandwidth of 6 GHz, a total reflective optical coupling loss of 7.1 dB and a responsitivity of 0.14 mA/mW are accomplished. By optimizing the operation optical wavelength and bias voltage, fifth-order nonlinearity dominates the intermodulation distortion and a spurious free dynamic range (SFDR) of 101dB center dot Hz(4/5) at 5.554GHz can be achieved experimentally.

  • 21.
    Karlsson, Stefan
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Yu, Yichuan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Liu, C.P.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Chuang, C.H.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Westergren, Urban
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Tsegaye, Tedros
    Seeds, A.J.
    A Packaged Reflective Electroabsorption Modulator/Detector with Optimized Dynamic Range2005In: Broadband Europe 2005, Bordeaux, 2005Conference paper (Refereed)
  • 22.
    Kjebon, Olle
    KTH, Superseded Departments, Electronics.
    Design, fabrication and analysis of high speed semiconductor lasers for optical communication1997Doctoral thesis, comprehensive summary (Other scientific)
  • 23.
    Kjebon, Olle
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Akram, Nadeem
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    40 Gb/s transmission experiment using directly modulated 1.55 mu m DBR lasers2003In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2003, p. 495-498Conference paper (Refereed)
    Abstract [en]

    Directly modulated two section 1.55 mum InGaAsP DBR lasers were used for 40 Gb/s error free operation back-to-back and through 1 km of standard single mode fiber.

  • 24.
    Kjebon, Olle
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Hammarlund, B.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Lindgren, S.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Rask, M
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Ojala, P.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Landgren, Gunnar
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Broberg, B.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    1.55 μm buried heterostructure laser via regrowth of semi-insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen1991In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 59, no 3, p. 235-255Article in journal (Refereed)
    Abstract [en]

    A GaInAsP/InP Fabry-Perot-type buried-heterostructure quantum well laser operating at 1.55 μm has been realized utilizing iron-doped semi-insulating InP around vertical mesas fabricated by reactive ion etching using methane and hydrogen. A maximum cw output power of 19 mW has been achieved on as-cleaved chips of 300 μm length with a quantum efficiency of 21% per facet. Threshold currents lie between 20 and 25 mA. As low as 2 Ω series resistance has been measured despite an ohmic contact area not exceeding that of the 2-μm-wide mesa. A 3 dB bandwidth of 7.5 GHz at 12 mW output power is obtained from the small-signal frequency modulation measurements.

  • 25.
    Kjebon, Olle
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Wallin, J
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Regrowth of semi-insulating iron doped InP around reactive ion etched laser mesas in <110> and <-110> directions by hydride vapour phase epitaxy1992In: Indium Phosphide and Related Materials, 1992., Fourth International Conference on, 1992, p. 48-50Conference paper (Other academic)
    Abstract [en]

    Hydride vapor phase epitaxy (HVPE) has been used for regrowth of semi-insulating iron doped InP around reactive ion etched laser mesas in <110> and <-110> directions. The regrowth morphology and the electrical properties are similar in both cases. It is also demonstrated that HVPE is a quick and easy technique to realize buried heterostructure (BH) lasers in both <110> and <-110> directions

  • 26.
    Kjebon, Olle
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Wallin, J
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Westergren, Urban
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Lindgren, S
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Extremely Low Parasitic 1.55 mm Lasers for Direct Amplitude High Frequency Modulation up to 20 GHz1992In: ECOC'93 , vol. 2: 19th European Conference on Optical Communication, Montreux, Switzerland, 1992, p. 201-204Conference paper (Other academic)
  • 27.
    Kjebon, Olle
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Transmission at 20 Gb/s with directly modulated DBR lasers over 30 km standard fiber2002In: Optical Communication, 2002. ECOC 2002. 28th European Conference on, 2002, Vol. 1, p. 1-2Conference paper (Refereed)
    Abstract [en]

    Transmission of 20 Gb/s NRZ over 30 km of standard fiber was accomplished with directly modulated DBR lasers at 1.55 mum. Experiments were performed without dispersion compensation and optical amplification and a negative penalty was observed

  • 28.
    Kjebon, Olle
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Carlsson, C.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Akram, Nadeem
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Experimental evaluation of detuned loading effects on distortion in edge emitting DBR lasers2002In: International Topical Meeting on Microwave Photonics, 2002, 2002, p. 125-128Conference paper (Refereed)
    Abstract [en]

    Detuned loading in directly modulated DBR lasers has been evaluated. IMD3 was measured, yielding a spurious free dynamic range for frequencies 1-19 GHz.

  • 29.
    Kjebon, Olle
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, S.
    Nilsson, S.
    Stalnacke, B.
    Backbom, L.
    Two-section InGaAsP DBR-lasers at 1.55 mu;m wavelength with 31 GHz direct modulation bandwidth1997In: Indium Phosphide and Related Materials, 1997., International Conference on, 1997, p. 665-668Conference paper (Refereed)
    Abstract [en]

    The small signal modulation response of two-section InGaAsP DBR-lasers at 1.55 mu;m wavelength was investigated. The response was fitted to a general transfer function and it was found that for almost all lasers the response could be described by a three pole model consisting of the laser response from the standard rate equations and an additional first order low pass roll-off. The lasers exhibited reduced damping and increased resonance frequency due to what we believe is detuned loading. This led to a maximum bandwidth of 30 GHz for lasers described by the three pole model. Some lasers exhibited an additional effect which we believe is cavity resonant enhancement of one of the modulation side-bands. This effect increased the maximum -3dB bandwidth to 31 GHz but could not be described by a three pole model

  • 30.
    Kjebon, Olle
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Nilsson, Stefan
    KTH, Superseded Departments, Electronics.
    Stålnacke, Björn
    KTH, Superseded Departments, Electronics.
    Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs1996In: Proc. SPIE, Vol. 2684, 1996, p. 138-152Conference paper (Other academic)
    Abstract [en]

    Resultsfrom modulation measurements of 40 high-speed multi quantum well (MQW)lasers ((lambda) equals 1.55 micrometer) of various designs are presented.By fitting the careful calibrated measurements, both magnitude and phase,to an analytical transfer function we were able to determineif a certain laser was limited by thermal effects, parasitic-likeeffects, or nonlinear gain effects. We found that most ofthe devices in the study were limited by thermal effectsand/or contact parasitics. The parasitics were found to be determinedby the width of the high-doped contact layer and claddinglayers below the metallic contact. It was also found thata high doping of the separate confinement heterostructure (SCH) layersdecreases the damping of the relaxation peak since it facilitatesthe carrier transport. Improved contact design and high doped SCH-layersresulted in modulation bandwidths of around 24 GHz.

  • 31.
    Kjebon, Olle
    et al.
    KTH, Superseded Departments, Electronics.
    Schatz, Richard
    KTH, Superseded Departments, Electronics.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Electronics.
    Nilsson, Stefan
    KTH, Superseded Departments, Electronics.
    Stålnacke, Björn
    KTH, Superseded Departments, Electronics.
    Bäckbom, Lena
    KTH, Superseded Departments, Electronics.
    30GHz direct modulation bandwidth indetuned loaded InGaAsP DBR lasers at1.55 μm wavelength1997In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 33, p. 488-489Article in journal (Refereed)
    Abstract [en]

    An increased resonance frequency and reduced damping of theresonance peak leading to a record high modulation bandwidth of30GHz were observed in 1.55 mm InGaAsP DBR lasers. Theseresults are attributed to the mechanism of detuned loading.

  • 32.
    Kjebon, Olle
    et al.
    KTH, Superseded Departments, Electronics.
    Öhlander, U
    KTH, Superseded Departments, Electronics.
    Lourdudoss, Sebastian
    KTH, Superseded Departments, Electronics.
    Wallin, J
    KTH, Superseded Departments, Electronics.
    Streubel, K
    KTH, Superseded Departments, Electronics.
    Nilsson, S
    KTH, Superseded Departments, Electronics.
    Klinga, T
    KTH, Superseded Departments, Electronics.
    Multi quantum well 1.55 μm DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection1994In:  Semiconductor Laser Conference, 1994: 14th IEEE International, 1994, p. 221-222Conference paper (Other academic)
    Abstract [en]

    Summary form only given. Multi quantum well GaInAsP DFB buried heterostructure lasers with low threshold, 3.4 mA, large slope of resonance frequency versus square root of current above threshold, 2.6 GHz/mA1/2 and high maximum bandwidth, 21.7 GHz, have been fabricated

  • 33. Lee, H. L. T.
    et al.
    Ram, R. J.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Bandwidth enhancement and chirp reduction in DBR lasers by strong optical injection2000In: Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on, 2000, p. 99-100Conference paper (Refereed)
    Abstract [en]

    We have observed modulation bandwidth enhancement to 28 GHz and evidence of reduced chirp, beyond the optimally tuned free running case, in strongly injection-locked DBR lasers. Bandwidth enhancement occurs because the total modal photon density depends on the phase between the master and slave fields, which varies during modulation due to the dependence of index on carrier density. This results in an increased coupling between the carriers and photons, giving an effectively higher differential gain. This effect appears to be stronger than the similar amplitude-phase coupling that occurs with detuned loading. Chirp reduction occurs only for very strong injection, which can be explained by the fact that chirp reduction can only be achieved for modulation frequencies less than the locking range, which increases with injected power. For higher frequencies, the chirp reduction due to detuned loading dominates

  • 34. Lee, H. L. T.
    et al.
    Ram, R. J.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Enhanced direct modulation efficiency by FM to IM conversion2000In: Microwave Photonics, 2000. MWP 2000. International Topical Meeting on, 2000, p. 105-108Conference paper (Refereed)
    Abstract [en]

    Enhanced modulation efficiency of a directly modulated, high speed DBR laser of up to 400% has been demonstrated using FM to IM conversion in optical fiber. The link noise figure is improved by 8 dB and the dynamic range by 3 dB at 10 GHz

  • 35. Lindgren, S.
    et al.
    Ahlfeldt, H.
    Backlin, L.
    Forssen, L.
    Vieider, C.
    Elderstig, H.
    Svensson, M.
    Granlund, L.
    Kerzar, B.
    Broberg, B.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Forzelius, E.
    Nilsson, S.
    Laser flip-chip mounting for passive alignment and high-frequency modulation1996In: Optical Communication, 1996. ECOC ’96. 22nd European Conference on, 1996, Vol. 1, p. 103-106Conference paper (Refereed)
    Abstract [en]

    We have developed a silicon motherboard for flip-chip mounting of lasers in a way that is compatible with high-frequency modulation (24 GHz) and which allows passive alignment of the lasers to single-mode fibres.

  • 36.
    Lindgren, Stefan
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Åhlfeldt, Henrik
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Bäcklin, Lennart
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Forssén, Lili
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Vieider, Christian
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Elderstig, Håkan
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Svensson, Magnus
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Granlund, Lennart
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Andersson, Lars
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Kerzar, Boris
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Broberg, Björn
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Forzelius, Elisabeth
    KTH, Superseded Departments, Electronics.
    Nilsson, Stefan
    KTH, Superseded Departments, Electronics.
    24-GHz modulation bandwidth and passive alignment of flip-chip mounted DFB laser diodes1997In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 9, no 3, p. 306-308Article in journal (Refereed)
  • 37. Liu, C. P.
    et al.
    Chuang, C. H.
    Karlsson, S.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Yu, Y.
    Tsegaye, T.
    Krysa, A. B.
    Roberts, J. S.
    Seeds, A. J.
    High-speed 1.56 µm asymmetric Fabry-Perot modulator/detector (AFPMD) for radio-over-fibre applications2005In: Optical Communication, 2005. ECOC 2005. 31st European Conference on, 2005, Vol. 3, p. 597-598Conference paper (Refereed)
    Abstract [en]

    We have fabricated modulator/detectors with modulation bandwidths exceeding 15 GHz, the highest yet reported for InGaAsP/InGaAsP MQW AFPMDs. Wavelength dependence of the modulated output power at microwave frequencies is reported for the first time.

  • 38. Liu, C. P.
    et al.
    Chuang, C. H.
    Karlsson, Sven
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Yu, Y.
    Tsegaye, T.
    Krysa, A. B.
    Roberts, J. S.
    Seeds, A. J.
    High-Speed 1.56-μm Multiple Quantum Well Asymmetric Fabry-Perot Modulator/Detector (AFPMD) for Radio-Over-Fibre Applications2005In: Microwave Photonics, 2005. MWP 2005. International Topical Meeting on, IEEE , 2005, p. 137-140Conference paper (Refereed)
    Abstract [en]

    We have designed and fabricated air-bridged optical modulator/detectors with modulation bandwidth exceeding 15GHz, the highest yet reported for InGaAsP/InGaAsP MQW AFPMDs. Wavelength dependence of the modulated output power at microwave frequencies is reported for the first time and the wide optical bandwidths ( gt; 17nm) so measured suggest that the AFPMD can be used with low-cost uncooled CWDM lasers in radio-over-fibre applications.

  • 39. Liu, Chin-Pang
    et al.
    Polo, Valentin
    Van Dijk, Frederic
    Pfrommer, Holger
    Piqueras, Miguel Angel
    Herrera, Javier
    Martinez, Alejandro
    Karlsson, Stefan
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Enard, Alain
    Yu, Yichuan
    Tsegaye, Tedros
    Chuang, Chin-Hsiu
    Seeds, Alwyn J.
    Marti, Javier
    Full-duplex DOCSIS/wirelessDOCSIS fiber-radio network employing packaged AFPMs as optical/electrical transducers2007In: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 25, no 3, p. 673-684Article in journal (Refereed)
    Abstract [en]

    A hybrid fiber-radio access network architecture for simultaneous wireline and wireless transmissions of Data-Over-Cable Service Interface Specification (DOCSIS) signals is presented. An all-optical harmonic up-conversion technique using a dual-drive Mach-Zehnder modulator provides the downstream optical signal modulated not only at the intermediate frequency in the 600- to 900-MHz band for wireline transmission but also at the up-converted frequency in the 5.45- to 5.75-GHz band for wireless transmission. An InGaAsP/InGaAsP multiple-quantum-well asymmetric Fabry-Perot modulator/detector has been designed, fabricated, and packaged and has been employed in the base station (BS) as an optical/electrical transducer, simultaneously providing the functions of optical intensity modulation and photodetection. At the BS, the DOCSIS signals are recovered at the wireline and wireless frequencies for the respective feeding of a cable access network or a fixed wireless access network in a highly flexible approach. Full-duplex operation has been demonstrated for both access types in an indoor laboratory environment. In a subsequent small-scale field trial, real-life Internet traffic provided by a local community antenna television system operator has been transported over the present hybrid fiber-radio access network architecture, and simultaneous transmission of both DOCSIS and digital television signals has also been performed.

  • 40.
    Lourdudoss, Sebastian
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Hammarlund, Bo
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    An investigation on hydride VPE growth and properties of semi-insulating InP:Fe1990In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 19, no 9, p. 981-987Article in journal (Refereed)
    Abstract [en]

    Growth of highly resistive semi-insulating InP : Fe has been achieved by the Hydride VPE technique in an ambient consisting mostly of nitrogen. After dealing with some thermodynamic considerations pertinent to InP:Fe growth, the experimental growth parameters are described. It is shown that various amounts of iron can be introduced into the InP crystal just by varying the temperature of the iron source. The crystal quality of the grown material is estimated to be good by etch pit density and x-ray diffraction analyses. Current-voltage behaviour and capacitance studies on an n+-SI-n+ structure are explained by invoking the theory of current injection in solids by Lampert and Mark: the experimental current densities at the threshold of each observed regime are compared with the theoretically derived current densities; in the absence of current injection, the measured capacitance is found to be the same as the geometrical capacitance.

  • 41.
    Lourdudoss, Sebastian
    et al.
    KTH, Superseded Departments, Electronics.
    Kjebon, Olle
    KTH, Superseded Departments, Electronics.
    Hydride vapor phase epitaxy revisited1997In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 3, no 3, p. 749-767Article in journal (Refereed)
  • 42.
    Lourdudoss, Sebastian
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Material Physics, Semiconductor Materials, HMA.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
    Nilsson, Stefan
    Stålnacke, Björn
    Fabrication and analysis of directly modulated 1.55 µm semiconductor lasers of bandwidth up to 30 GHz1997In: 4th Annual meeting of European Research Network of Excellence on the Physics and Technology of Mesoscopic Systems (Phantoms), March 1997, Aachen, Germany, paper D2.11., 1997Conference paper (Refereed)
  • 43.
    Lourdudoss, Sebastian
    et al.
    KTH, Superseded Departments, Electronics.
    Rodríguez Messmer, E.
    KTH, Superseded Departments, Electronics.
    Kjebon, Olle
    KTH, Superseded Departments, Electronics.
    Landgren, Gunnar
    KTH, Superseded Departments, Electronics.
    Temporally resolved selective regrowth of InP around [110] and [110] mesas1996In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 25, no 3, p. 389-394Article in journal (Refereed)
    Abstract [en]

    Temporally resolved selective regrowth of InP around reactive ion etched [110] and [110] directional mesas is studied by hydride vapor phase epitaxy at the growth temperatures of 600, 650, 685, and 700°C. The regrowth profiles are strikingly different depending upon the mesa orientation. The results are interpreted by invoking the difference in the bonding configurations of these mesas as well as the growth facility in a direction leading to the largest reduction of dangling bonds under the growth conditions. Various emerging planes during regrowth are identified and are {hhl} planes with initial values of l/h ≤ 3 but ≥ 3 as the planarization is approached. Initial lateral growth defined as the growth away from the mesa at half of its height in the very first minute is a decreasing function of temperature when plotted as Arrhenius curves. Such a behavior is attributed to the exothermicity of the reaction and to an enhanced pyrolysis of PH3 to P2. The lateral growth rate is much larger than that on the planar substrate. This should be taken into account when regrowth of a doped layer (e.g. InP:Fe or InP:Zn) is carried out to fabricate a buried heterostructure device since the dopant concentration can be very much lower than the one optimized on the planar substrates.

  • 44. Lysak, V. V.
    et al.
    Schatz, Richard
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Shulika, A. V.
    Sukhoivanov, I. A.
    Kjebon, Olle
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    The influence of gain nonlevearities on distortion in semiconductor lasers2004Conference paper (Refereed)
    Abstract [en]

    The modulation response and second harmonic distortion was analyzed for different gain models and compared with exact integral gain models. It was shown that if we modulate the laser around steady state with a signal, it would induce carrier and photon fluctuations. The second order distortion depended on the carrier and photon modulation response, the internal mixing process determined by the Hessian matrix creating a fictive injection signal and the carrier and photon modulation response at intermodulation frequency. It was found that the approximate model has a reasonable good agreement with an exact comprehensive gain model at all frequencies and pumping currents.

  • 45. Morthier, G.
    et al.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Extended modulation bandwidth of DBR and external cavity lasers by utilizing a cavity resonance for equalization2000In: IEEE Journal of Quantum Electronics, ISSN 0018-9197, E-ISSN 1558-1713, Vol. 36, no 12, p. 1468-1475Article in journal (Refereed)
    Abstract [en]

    We have investigated the occurence of a second resonance frequency in distributed Bragg reflector laser diodes and the high modulation bandwidth resulting from it. The influence of different laser parameters has been theoretically investigated. It is also shown that a similar behavior can be obtained in laser diodes with a passive, low-loss, and gratingless external cavity, The possibilities of large-signal digital modulation are also investigated.

  • 46. Pfrommer, H.
    et al.
    Piqueras, M. A.
    Herrera, J.
    Polo, V.
    Martinez, A.
    Karlsson, S.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
    Yu, Y.
    Tsegaye, I.
    Liu, C. P.
    Chuang, C. H.
    Enard, A.
    Van Dijk, F.
    Seeds, A. J.
    Marti, J.
    Full-duplex DOCSIS/wirelessDOCSIS fiber-radio network employing packaged AFPM-based base-stations2006In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 18, no 04-jan, p. 406-408Article in journal (Refereed)
    Abstract [en]

    The simultaneous wireline (600 MHz) and wireless (5.5 GHz) transmission of data over cable service interface specification (DOCSIS) signals in a hybrid fiber-radio access network is presented. The DOCSIS signal wireless replica is generated by means of an optical harmonic up-conversion technique based on a dual-drive Mach-Zehnder modulator. The optical signal is fed to a base station (BS) where a packaged asymmetric Fabry-Perot modulator/detector acts simultaneously as a photodetector and an optical modulator. At the BS, the DOCSIS signals can be fed either to a wireline or a wireless access network, in a highly flexible approach. Full-duplex operation has been demonstrated for both access types, including indoor wireless transmission.

  • 47. Pfrommer, H.
    et al.
    Piqueras, M. A.
    Herrera, J.
    Polo, V.
    Martinez, A.
    Karlsson, Stefan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Schatz, Richard
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Enard, A.
    Van Dijk, F.
    Yu, Yichuan
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Tsegaye, Tedros
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Liu, C. P.
    Chuang, C. H.
    Marti, J.
    Seeds, A. J.
    Experimental Demonstration of Full-Duplex DOCSIS Signal Transmissions over a Wireline/Wireless-Fibre Access Network2006In: 2006 International Topical Meeting on Microwaves Photonics, 2006, p. 89-92Conference paper (Refereed)
    Abstract [en]

    A fibre-radio access network architecture for simultaneous wireline and wireless transmissions of data over cable service interface specification (DOCSIS) signals is presented. An all-optical harmonic up-conversion technique using a dual-drive Mach-Zehnder modulator (DD-MZM) is employed at the central station while an InGaAsP/InGaAsP multiple quantum well (MQW) asymmetric Fabry-Perot modulator/detector (AFPM) functions as a single optical/electrical transducer performing optical intensity modulation and photodetection simultaneously at the base station. Full-duplex operation is demonstrated for both access types in an indoor laboratory environment as well as in a small-scale outdoor field trial

  • 48.
    Schatz, Richard
    et al.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    High speed direct modulation of semiconductor lasers2004In: 30th European Conference on Optical Communications, Proc. of ECOC2004, 2004, p. 444-447Conference paper (Refereed)
    Abstract [en]

    The key parameters for direct modulation of semiconductor lasers are identified. The possibility to further extend the bandwidth is discussed and an overview of our work on detuned loaded DBR lasers is given

  • 49.
    Schatz, Richard
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Lourdudoss, Sebastian
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT. KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
    Nilsson, S.
    Stalnacke, B.
    Enhanced modulation bandwidth and self-pulsations in detuned loaded InGaAsP DBR-lasers1996In: Semiconductor Laser Conference, 1996., 15th IEEE International, 1996, p. 93-94Conference paper (Refereed)
    Abstract [en]

    A strong undamping of the relaxation peak leading to self-pulsations and a record high modulation bandwidth (26 GHz) were observed in 1.55 mu;m InGaAsP DBR QW lasers. These results are attributed to the mechanism of detuned loading

  • 50.
    Schatz, Richard
    et al.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP. KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Kjebon, Olle
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Nadeem Akram, M.
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Design and evaluation of high speed DBR lasers for analog and digital transmission2003In: Laser and Fiber-Optical Networks Modeling, 2003. Proceedings of LFNM 2003. 5th International Workshop on, 2003, p. 32-37Conference paper (Refereed)
    Abstract [en]

    The directly modulated laser is a simple and reliable source for high speed optical transmission of information. It is especially useful in medium to short distance digital links (e.g. metropolitan and local area networks) where the excess pulse dispersion due to laser chirp is not a critical issue. The linear current to light conversion makes it also interesting for transmission of analogue signals over fiber (CATV and microwave links). In both cases a high bandwidth is needed in order to maximize the transmission capacity and retain good distortion characteristics. For single section DFB lasers with low electrical parasitics, the bandwidth is mainly determined by the differential gain of the active material. There has been little progress in improving this material parameter lately beyond what was achieved with the introduction of strained quantum wells. A theoretical and experimental investigation of another approach to further improve the modulation bandwidth, namely by utilizing the dispersive feedback from a detuned Bragg grating in a DBR laser.

12 1 - 50 of 55
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