Change search
Refine search result
1 - 7 of 7
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Hou, Shuoben
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Shakir, Muhammad
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Hellström, Per-Erik
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Zetterling, Carl-Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Östling, Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Process Control and Optimization of 4H-SiC Semiconductor Devices and Circuits2019In: Proceedings of the 3rd Electron Devices Technology and Manufacturing, (EDTM) Conference 2019, IEEE, 2019Conference paper (Refereed)
  • 2.
    Shakir, Muhammad
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Metreveli, Alexy
    Ur Rashid, Arman
    Mantooth, Alan
    Zetterling, Carl-Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    555-Timer IC Operational at 500 °C2019In: Bipolar SiC 555-timer IC, High Temperature ICs, TTL Comparator, SiC Integrated CircuitsArticle in journal (Other academic)
    Abstract [en]

    This paper reports an industry standard monolithic 555-timer circuit designed and fabricated in the in-house silicon carbide (SiC) low-voltage bipolar technology. The paper demonstrates the 555-timer ICs characterization in both astable and monostable modes of operation, with a supply voltage of 15 V over the wide temperature range of 25 to 500°C. Nonmonotonictemperature dependence was observed for the 555-timer IC frequency, rise-time, fall-time, and power dissipation.

  • 3.
    Shakir, Muhammad
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Process Design Kit and High-Temperature Digital ASICs in Silicon Carbide2019Doctoral thesis, comprehensive summary (Other academic)
    Abstract [en]

    Electronics such as microprocessors are highly demanded to monitor or control a process or operation in temperature critical (300 ºC to 600 °C) applications. State-of-the-art silicon-based integrated circuits (ICs) have been improved significantly throughout the years but mainly for a low-temperature ambient. At a temperature higher than 300 ºC silicon-on-insulator (SOI) or bulk silicon-based electronics cannot operate reliably. Therefore the wide bandgap (WBG) semiconductor materials such as silicon carbide (SiC) come into play.

    In recent years, many types of SiC-based devices and low complex ICs have been reported and are operational at a high temperature (HT). The main goal of the thesis is to explore and demonstrate the feasibility of SiC-based circuits that are complex, dense and monolithically integrated for high-temperature applications such as a central-processing-unit (CPU).

    This thesis work demonstrates a Process Design Kit (PDK) for the SiC-based large scale integrated (LSI) circuits implementation. It consists of discrete devices, gate and module library, and SiC ICs verification programs. The thesis work reports the PDK results over the full temperature range of 25 to 500 °C with a power supply of 10 V to 20 V.

    The thesis work demonstrates a 4-bit CPU architecture designed for a proposed instruction set. Manual place and route with around 10,000 devices and area of 150 mm2 were carried out using the PDK standard cell library. The CPU and integral parts have been implemented at the transistor level using the PDK gate/module library and simulated from 25 to 500 °C. The CPU has been fabricated in the in-house low-power SiC bipolar process and measured at a high temperature.

    The thesis work also reports reference analog and mixed-signal ICs. A 555-timer consisting of both digital and analog circuits has been designed, integrated and characterized up to 500 °C. Flash and SAR ADCs have been implemented using the PDK for HT applications. A 256-pixel image-sensor design and layout were also carried out using the PDK.

    This thesis work is an important step and has laid the foundation of SiC-based LSI circuits realization for extreme environment applications.

  • 4.
    Shakir, Muhammad
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Hou, Shuoben
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Hedayati, Raheleh
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Malm, B. Gunnar
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Östling, Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Zetterling, Carl-Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications2019In: Electronics, ISSN 2079-9292, Vol. 8, no 5Article in journal (Other academic)
    Abstract [en]

    A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells. A transistor–transistor logic (TTL)-based PDK gate library design will also be discussed with delay, power, noise margin, and fan-out as main design criterion to tolerate the threshold voltage shift, beta (β) and collector current (IC) variation of SiC devices as temperature increases. The PDK-based complex digital ICsdesign flow based on layout, physical verification, and in-house fabrication process will also be demonstrated. Both combinational and sequential circuits have been designed, such as a 720-device ALU and a 520-device 4 bit counter. All the integrated circuits and devices are fully characterized up to 500 °C. The inverter and a D-type flip-flop (DFF) are characterized as benchmark standard cells. The proposed work is a key step towards SiC-based very large-scale integrated (VLSI) circuits implementation for high-temperature applications.

  • 5.
    Shakir, Muhammad
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Hou, Shuoben
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Malm, Bengt Gunnar
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    Östling, Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS).
    Zetterling, Carl-Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    A 600 degrees C TTL-Based 11-Stage Ring Oscillator in Bipolar Silicon Carbide Technology2018In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 39, no 10, p. 1540-1543Article in journal (Refereed)
    Abstract [en]

    Ring oscillators (ROs) are used to study the high-temperature characteristics of an in-house silicon carbide (SiC) technology. Design and successful operation of the in-house-fabricated 4H-SiC n-p-n bipolar transistors and TTL inverter-based 11-stage RO are reported from 25 degrees C to 600 degrees C. Non-monotonous temperature dependence was observed for the oscillator frequency; in the range of 25 degrees C to 300 degrees C, it increased with the temperature (1.33 MHz at 300 degrees C and V-CC = 15 V), while it decreased in the range of 300 degrees C-600 degrees C. The oscillator output frequency and delay were also characterized over a wide range of supply voltage (10 to 20 V). The noise margins of the TTL inverter were also measured; noise margin low (NML) decreases with the temperature, whereas noise margin high (NMH) increases with the temperature. The measured power-delay product (P-D . T-P) of the TTL inverter and 11-stage RO was approximate to 4.5 and approximate to 285 nJ, respectively, at V-CC= 15 V. Reliability testing indicated that the RO frequency of oscillation decreased 16% after HT characterization.

  • 6.
    Shakir, Muhammad
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Hou, Shuoben
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Metreveli, Alex
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Rashid, Arman Ur
    Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA..
    Mantooth, Homer Alan
    Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA..
    Zetterling, Carl-Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    555-Timer and Comparators Operational at 500 degrees C2019In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 66, no 9, p. 3734-3739Article in journal (Refereed)
    Abstract [en]

    This paper reports an industry standard monolithic 555-timer circuit designed and fabricated in the in-house silicon carbide (SiC) low-voltage bipolar technology. This paper demonstrates the 555-timer integrated circuits (ICs) characterization in both astable and monostable modes of operation, with a supply voltage of 15 V over the wide temperature range of 25 degrees C-500 degrees C. Nonmonotonic temperature dependence was observed for the 555-timer IC frequency, rise time, fall-time, and power dissipation.

  • 7.
    Shakir, Muhammad
    et al.
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits. KTH.
    Hou, Shuoben
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics.
    Zetterling, Carl-Mikael
    KTH, School of Electrical Engineering and Computer Science (EECS), Electronics, Integrated devices and circuits.
    A Monolithic 500 °C D-flip flop Realized in Bipolar 4H-SiC TTL technology2019Conference paper (Other academic)
1 - 7 of 7
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf