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  • 1. Bishop, S.M.
    et al.
    Preble, E.A.
    Hallin, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Sarney, W.
    Chang, H.-R.
    Storasta, Liutauras
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Jacobson, Henrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Reitmeier, Z.J.
    Wagner, B.P.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Davis, R.F.
    Characterization and comparison of 4H-SiC(112 over-bar 0) and 4H-SiC(0001) 8° off-axis substrates and homoepitaxial films2004In: Materials Research Society Symposium Proceedings, Vol. 815 Silicon Carbide 2004 - Materials, Processing and Devices,2004, 2004, p. 53-58Conference paper (Other academic)
  • 2. Bishop, S.M.
    et al.
    Preble, E.A.
    Hallin, Christer
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Storasta, Liutauras
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Jacobson, Henrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Wagner, B.P.
    Reitmeier, Z.J.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Davis, R.F.
    Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization2004In: Materials Science Forum, Vols. 457-460, Mater. Sci. Forum, Vol. 457-460: Trans Tech Publications Inc. , 2004, p. 221-Conference paper (Refereed)
  • 3.
    Jacobson, Henrik
    et al.
    Linköping University, Department of Social and Welfare Studies, Learning, Aesthetics, Natural science. Linköping University, Faculty of Educational Sciences.
    Li, Xun
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Henry, Anne
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Structural investigation of heteroepitaxial 3C-SiC grown on 4H-SiC substrates2013In: SILICON CARBIDE AND RELATED MATERIALS 2012, Trans Tech Publications , 2013, Vol. 740-742, p. 319-322Conference paper (Refereed)
    Abstract [en]

    3C-SiC epilayers grown on Si-face nominally on-axis 4H-SiC substrate are characterized with X-ray diffraction techniques. The aim was to investigate if these 3C-SiC epilayers were grown by single domain growth. The results show that all samples start by having several nucleation centers all over the substrate surface and the growth continues with two domain formations. As the growth proceeds one domain overtakes the growth and single domain crystal growth occurs. This single domain was further investigated and the results show that it seems to contain many sub-domains with same lattice constant but slightly tilted.

  • 4.
    Jacobsson, Henrik
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Syväjärvi, Mikael
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Birch, Jens
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Tuomi, T
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Helsinki Univ Technol, Optoelect Lab, FI-02015 Helsinki, Finland.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    High-resolution XRD evaluation of thick 4H-SiC epitaxial layers2001In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, p. 291-294Conference paper (Refereed)
    Abstract [en]

    4H-SiC commercial wafers and sublimation grown epitaxial layers with a thickness of 100 mum have been studied concerning crystalline structure. The substrate wafers and the epitaxial layers have been separately investigated by high-resolution x-ray diffraction (HRXRD) and synchrotron white beam x-ray topography (SWBXT). The results show that the structural quality was improved in the epitaxial layers in the < 11 (2) over bar0 > and <(1) over bar 100 > directions, concerning domain distribution, lattice plane misorientation, mosaicity, and strain? compared with the substrates. Misoriented domains have merged together to form larger domains while the tilt between the domains was reduced, which resulted in non-splitting in diffraction curves. It is also clear that if the misorientation in the substrate gets too large, we can only see a slight decrease in the misorientation in the layer. At some positions on the substrates there were block structure (mosaicity). omega -rocking curves from epilayers at the same position showed smaller full width at half-maximum (FWHM) values and more uniform and narrow peaks. Curvature was almost the same in grown epilayers compared with the substrates. The shape of the grown epitaxial layers nas concave similarly to the substrates.

  • 5.
    Li, Xun
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Jacobson, Henrik
    Linköping University, Department of Social and Welfare Studies, Learning, Aesthetics, Natural science. Linköping University, Faculty of Educational Sciences.
    Boulle, Alexandre
    Centre Europeen Ceram, France .
    Chaussende, Didier
    Grenoble INP, France .
    Henry, Anne
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC2014In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 3, no 4, p. P75-P81Article in journal (Refereed)
    Abstract [en]

    High quality double-position-boundaries free 3C-SiC epilayers have been successfully grown on on-axis (0001) 4H-SiC by chemical vapor deposition at optimized conditions as observed with optical microscopy and X-ray diffraction. The effect of the growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H-2 ratio, N-2 addition and pressure, on the quality of the grown layers is investigated. Different techniques, including microscopic and spectroscopic techniques, are used to characterize the epilayers. High resolution X-ray diffraction shows 2 theta-omega curve with full width at half maximum of only 16 arcsec for the (111) reflection detected from a 35 mu m thick 3C-SiC layer, showing the good structural quality of the layer. Reciprocal space maps confirm the absence of double-position-boundaries in a large depth of the layers. Low temperature photoluminescence measurement shows clear near-bandgap emission with sharp and single peaks, which further verifies the high quality of the epilayers.

  • 6.
    Syväjärvi, Mikael
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Jacobsson, Henrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Growth of 3C-SiC using off-oriented 6H-SiC substrates2001In: Materials Science Forum, Vols. 353-356, 2001, Vol. 353-3, p. 143-146Conference paper (Refereed)
    Abstract [en]

    Large area growth of 3C-SiC on off-oriented 6H-SiC substrates is demonstrated and the growth evolution is investigated. The structural quality assessed from high-resolution x-ray diffraction omega -rocking curve measurements shows a symmetric peak with a full width at half maximum of 36 arcsec and 2 theta/theta measurements show that the lattice in the grown 3C-SiC is not distorted by using 6H-SiC as a substrate.

  • 7.
    Syväjärvi, Mikael
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Jacobsson, Henrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
    Structural improvement in sublimation epitaxy of 4H-SiC2000In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 88, no 3, p. 1407-1411Article in journal (Refereed)
    Abstract [en]

    The sublimation epitaxy growth process has been studied. The structural quality of the grown layers improves compared with the substrate mainly due to a diminished domain structure misorientation. Optical microscopy shows that the as-grown surfaces are free of typical defects appearing in silicon carbice (SiC) epitaxy, whereas atomic force microcopy measurements show macrosteps. As a possible technique to produce high-quality 4H-SiC, sublimation epitaxy was performed on substrates containing a layer grown by liquid phase epitaxy which is a growth process for closing micropipes in the initial substrate. In spite of the initial surface roughness of the liquid phase epitaxy layer, the surface morphology of the sublimation grown epilayers remained smooth and the structural quality improvement was maintained. This does not occur if the initial surfaces are too rough. A suggestion for roughness reduction is presented. The growth conditions (growth rate ramp up, growth temperature, temperature gradient, source to substrate distance, and substrate surface orientation) leading to the results are presented. A model for the mechanism for structural improvement is outlined and supporting experimental observations are given. (C) 2000 American Institute of Physics. [S0021-8979(00)07915-9].

  • 8.
    Syväjärvi, Mikael
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Yakimova, Rositsa
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Jacobsson, Henrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Linnarsson, MK
    Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden Okmet AB, SE-17824 Ekero, Sweden Royal Inst Technol, Dept Solid State Elect, SE-16440 Stockholm, Sweden.
    Henry, Anne
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    High growth rate epitaxy of thick 4H-SiC layers2000In: Materials Science Forum, Vols. 338-342, Scientific.Net , 2000, Vol. 338-3, p. 165-168Conference paper (Refereed)
    Abstract [en]

    Sublimation epitaxy for fabrication of thick 4H-SiC layers has been studied with respect to surface morphology, structural quality, and purity. The surface morphology of thick (50-100 mum) epilayers is smooth, even though the growth rate was 100 mum/h. These surfaces are obtained within a parameter window for morphological stability. The structural perfection is confirmed by high-resolution X-Ray diffraction measurements and the epilayer quality is improved compared with the substrate. The limitation in purity is dependent mainly on the purity of the SiC source material. The growth system purity, mainly graphite and Ta parts of the growth crucible, is also of major importance. Results from intentional doping for high-resistive, semi-insulating and p-type material are presented.

  • 9.
    Yakimova, Rositsa
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Syväjärvi, Mikael
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Iakimov, Tihomir
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Jacobsson, Henrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Kakanakova-Georgieva, Anelia
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Raback, P.
    Råback, P., Center for Scientific Computing, P.O. Box 405, FIN-02101 Espoo, Finland.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Growth of silicon carbide: Process-related defects2001In: Appl. Surf. Sci., Vol. 184, 2001, Vol. 184, no 1-4, p. 27-36Conference paper (Refereed)
    Abstract [en]

    This paper reviews the present understanding of defect formation and development in relation to process conditions in 4H-SiC crystal growth and epitaxy. The polytype uniformity during seeded sublimation growth of SiC boules has been discussed. Insight into different structural imperfections has been attempted. The role of the temperature distribution, as well as of the quality of seed/crystal interface in the occurrence of grown-in defects has been demonstrated. Micropipe termination by liquid-phase deposition along with defect evolution in subsequently grown layers due to rough interface has been addressed. Finally, a relation between extended morphological defects in thick (50-100 µm) 4H-SiC epitaxial layers and local stress in the material has been suggested. Optimised growth conditions to reduce the overall defect density have been proposed. © 2001 Elsevier Science B.V. All rights reserved.

  • 10.
    Yakimova, Rositsa
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Syväjärvi, Mikael
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Iakimov, Tihomir
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Jacobsson, Henrik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
    Raback, R
    Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Okmet AB, S-17824 Ekero, Sweden Ctr Comp Sci, FIN-02101 Espoo, Finland Okmet Ltd, FIN-01301 Vantaa, Finland.
    Vehanen, A
    Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Okmet AB, S-17824 Ekero, Sweden Ctr Comp Sci, FIN-02101 Espoo, Finland Okmet Ltd, FIN-01301 Vantaa, Finland.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Polytype stability in seeded sublimation growth of 4H-SiC boules2000In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 217, no 3, p. 255-262Article in journal (Refereed)
    Abstract [en]

    Process conditions for stable single polytype growth of 4H-SiC boules via a seeded sublimation technique have been developed. Reproducible results can be obtained in a narrow temperature interval around 2350 degrees C and on the C-face of 4H-SiC seeds. Evidence is presented that during the initial stage of growth, morphological instabilities may occur resulting in structural defects. A solution is proposed based on the experimental findings, i.e. the first regions of growth ought to be carried out at a low supersaturation (growth rate similar to 100 mu m/h) until a proper growth front has developed. (C) 2000 Elsevier Science B.V. All rights reserved.

  • 11.
    Yakimova, Rositsa
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Syväjärvi, Mikael
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Jacobson, Henrik
    Linköping University, Department of Social and Welfare Studies. Linköping University, Faculty of Educational Sciences.
    Janzén, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Some aspects of extended defects formation and their reduction in silicon carbide crystals2003In: Recent research developments in materials science & engineering. Vol. 1, pt. 1 / [ed] S. G. Pandalai, Kerala, India: Trans Research Network , 2003, 1, p. 619-646Chapter in book (Other academic)
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