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  • 1. Abadei, S.
    et al.
    Gevorgian, S.
    Cho, C. R.
    Grishin, Alexander M.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Andreasson, J.
    Lindback, T.
    DC field dependent properties of Na0.5K0.5NbO3/SiO2/Si structures at millimeter-wave frequencies2001In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 13, p. 1900-1902Article in journal (Refereed)
    Abstract [en]

    Dielectric properties of laser-ablated 0.5-mum-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Omega cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-mum-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 mum. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices.

  • 2.
    Abadei, S
    et al.
    Chalmers University of Technology.
    Gevorgian, S
    Chalmers University of Technology.
    Cho, C.-R
    Royal Institute of Technology.
    Grishin, A.
    Royal Institute of Technology.
    Andreasson, Johanna
    Lindbäck, Ture
    DC field dependent properties of Na0.5K0.5NbO₃/SiO₂/Si structures at millimeter-wave frequencies2001In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 13, p. 1900-1902Article in journal (Refereed)
    Abstract [en]

    Dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Ω cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-μm-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 μm. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices

  • 3. Aberg, D.
    et al.
    Hallén, Anders.
    KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
    Pellegrino, P.
    Svensson, B. G.
    Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers2001In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 19, p. 2908-2910Article in journal (Refereed)
    Abstract [en]

    Ion implantation causes free charge carrier reduction due to damage in the crystalline structure. Here, nitrogen-doped 4H silicon carbide (n type) epitaxial layers have been investigated using low ion doses in order to resolve the initial stage of the charge carrier reduction. It was found that the reduction of free carriers per ion-induced vacancy increases with increasing nitrogen content. Nitrogen is suggested to be deactivated through reaction with migrating point defects, and silicon vacancies or alternatively interstitials are proposed as the most likely candidates.

  • 4.
    Abergel, D. S. L.
    Stockholm University, Nordic Institute for Theoretical Physics (Nordita). KTH Royal Institute of Technology, Sweden.
    Excitonic condensation in spatially separated one-dimensional systems2015In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 21, article id 213103Article in journal (Refereed)
    Abstract [en]

    We show theoretically that excitons can form from spatially separated one-dimensional ground state populations of electrons and holes, and that the resulting excitons can form a quasicondensate. We describe a mean-field Bardeen-Cooper-Schrieffer theory in the low carrier density regime and then focus on the core-shell nanowire giving estimates of the size of the excitonic gap for InAs/GaSb wires and as a function of all the experimentally relevant parameters. We find that optimal conditions for pairing include small overlap of the electron and hole bands, large effective mass of the carriers, and low dielectric constant of the surrounding media. Therefore, one-dimensional systems provide an attractive platform for the experimental detection of excitonic quasicondensation in zero magnetic field.

  • 5.
    Abergel, David
    KTH, Centres, Nordic Institute for Theoretical Physics NORDITA. Stockholm University, Sweden.
    Excitonic condensation in spatially separated one-dimensional systems2015In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 21, article id 213103Article in journal (Refereed)
    Abstract [en]

    We show theoretically that excitons can form from spatially separated one-dimensional ground state populations of electrons and holes, and that the resulting excitons can form a quasicondensate. We describe a mean-field Bardeen-Cooper-Schrieffer theory in the low carrier density regime and then focus on the core-shell nanowire giving estimates of the size of the excitonic gap for InAs/GaSb wires and as a function of all the experimentally relevant parameters. We find that optimal conditions for pairing include small overlap of the electron and hole bands, large effective mass of the carriers, and low dielectric constant of the surrounding media. Therefore, one-dimensional systems provide an attractive platform for the experimental detection of excitonic quasicondensation in zero magnetic field.

  • 6. Achtziger, N
    et al.
    Grillenberger, J
    Witthuhn, W
    Linnarsson, M K
    KTH, School of Information and Communication Technology (ICT).
    Janson, M S
    Svensson, B G
    Hydrogen passivation of silicon carbide by low-energy ion implantation1998In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 73, p. 945-947Article in journal (Refereed)
    Abstract [en]

    implantation of deuterium is performed to investigate the mobility and passivating effect of hydrogen in epitaxial alpha-SiC (polytypes 4H and 6H). To avoid excessive damage and the resulting trapping of hydrogen, the implantation is performed with low energy (600 eV H-2(2)+). The H-2 depth profile is analyzed by secondary ion mass spectrometry. Electrical properties are measured by capacitance-voltage profiling and admittance spectroscopy. In p-type SIG, hydrogen diffuses on a mu m scale even at room temperature and effectively passivates accepters. In n-type SiC, the incorporation of H is suppressed and no passivation is detected. (C) 1998 American Institute of Physics.

  • 7.
    Adamovic, Dragan
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics . Linköping University, The Institute of Technology.
    Münger, Peter
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics . Linköping University, The Institute of Technology.
    Chirita, Valeriu
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Greene, Joe
    University of Illinois.
    Low-energy ion irradiation during film growth: Kinetic pathways leading to enhanced adatom migration rates2005In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, p. 211915-Article in journal (Refereed)
    Abstract [en]

    Embedded-atom molecular dynamics simulations are used to investigate the effects of low-energy self-ion irradiation of Pt adatoms on Pt(111). Here, we concentrate on self-bombardment dynamics, i.e., isolating and monitoring the atomic processes, induced by normally incident Pt atoms with energies E ranging from 5 to 50 eV, that can affect intra- and interlayer mass transport.. We find that adatom scattering, surface channeling, and dimer formation occur at all energies. Atomic intermixing events involving incident and terrace atoms are observed at energies 15  eV, while the collateral formation of residual surface vacancies is observed only with E>40  eV. The overall effect of low-energy self-ion irradiation is to enhance lateral adatom and terrace atom migration. ©2005 American Institute of Physics

  • 8.
    Adnane, Bouchaib
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics . Linköping University, The Institute of Technology.
    Karlsson, Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Hansson, Göran
    Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics . Linköping University, The Institute of Technology.
    Holtz, Per-Olof
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Ni, Wei-Xin
    Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics . Linköping University, The Institute of Technology.
    Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy2010In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 18, p. 181107-Article in journal (Refereed)
    Abstract [en]

    Well-resolved photoluminescence excitation (PLE) spectra are reported for selfassembled SiGe dots grown on Si(100) by molecular beam epitaxy. The observation of two excitation resonance peaks is attributed to two different excitation/de-excitation routes of interband optical transitions connected to the spatially direct and indirect recombination processes. It is concluded that two dot populations are addressed by each monitored luminescence energy for the PLE acquisition.

  • 9.
    Ahlberg, Patrik
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Hinnemo, Malkolm
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Song, Man
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Gao, Xindong
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Zhang, Shi-Li
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Zhang, Zhi-Bin
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    A two-in-one process for reliable graphene transistors processed with photolithography2015In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 107, no 20, article id 203104Article in journal (Refereed)
    Abstract [en]

    Research on graphene field-effect transistors (GFETs) has mainly relied on devices fabricated using electron-beam lithography for pattern generation, a method that has known problems with polymer contaminants. GFETs fabricated via photo-lithography suffer even worse from other chemical contaminations, which may lead to strong unintentional doping of the graphene. In this letter, we report on a scalable fabrication process for reliable GFETs based on ordinary photo-lithography by eliminating the aforementioned issues. The key to making this GFET processing compatible with silicon technology lies in a two-in-one process where a gate dielectric is deposited by means of atomic layer deposition. During this deposition step, contaminants, likely unintentionally introduced during the graphene transfer and patterning, are effectively removed. The resulting GFETs exhibit current-voltage characteristics representative to that of intrinsic non-doped graphene. Fundamental aspects pertaining to the surface engineering employed in this work are investigated in the light of chemical analysis in combination with electrical characterization.

  • 10. Ahmed, S.
    et al.
    Nawaz, R.
    Syed, W. A.
    Taiq, R.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
    Amirov, K.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
    Larsson, U.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
    Annealing characteristics of electrically isolated InGaAsP devices2007In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 6, p. 062112-Article in journal (Refereed)
    Abstract [en]

    The authors report on the effects of fluorine implants on the sheet resistivity of n-type InGaAsP layers grown lattice matched to InP by metal organic molecular beam epitaxy. Projected range matched fluorine ions are implanted at multiple energies and single MeV energy at room temperature (RT) and 77 K in both cases. Hall and resistivity measurements are carried out for the van der Pauw samples and the evolution of sheet resistivity (R-s) as a function of annealing temperature was studied in both cases. Fluorine multienergy implantation at 77 K produces higher as-implanted resistivity layers of similar to 10(7) Omega/square compared to RT implants. It is further observed that RT and 77 K implants recover to their preimplanted sheet resistivity values as soon as they are annealed at temperatures higher than 500 degrees C. Substrate temperature and collision cascade density due to multiple energy implants are found to play an important role to optimize the isolation process.

  • 11. Ahuja, R.
    et al.
    Eriksson, O.
    Wills, J. M.
    Johansson, Börje
    Electronic structure of Ti3SiC22000In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 76, no 16, p. 2226-2228Article in journal (Refereed)
  • 12.
    Aijaz, Asim
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Kubart, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Ion induced stress relaxation in dense sputter-deposited DLC thin films2017In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 111, no 5, article id 051902Article in journal (Refereed)
    Abstract [en]

    Deposition of high-density and low-stress hydrogen-free diamond like carbon (DLC) thin films is demonstrated using a pulsed ionized sputtering process. This process is based on high power impulse magnetron sputtering, and high C ionization is achieved using Ne as the sputtering gas. The intrinsic compressive stress and its evolution with respect to ion energy and ion flux are explained in terms of the compressive stress based subplantation model for DLC growth by Davis. The highest mass density was similar to 2.7 g/cm(3), and the compressive stresses did not exceed similar to 2.5 GPa. The resulting film stresses are substantially lower than those achieved for the films exhibiting similar mass densities grown by filtered cathodic vacuum arc and pulsed laser deposition methods. This unique combination of high mass density and low compressive stress is attributed to the ion induced stress relaxation during the pulse-off time which corresponds to the post thermal spike relaxation timescales. We therefore propose that the temporal ion flux variations determine the magnitude of the compressive stress observed in our films. Published by AIP Publishing.

  • 13.
    Alami, J.
    et al.
    University of Aachen, Germany.
    Sarakinos, Kostas
    Institute of Physics (IA), RWTH Aachen University, Germany.
    Mark, G.
    MELEC GmbH, Germany.
    Wuttig, M.
    University of Aachen, Germany.
    On the deposition rate in a high power pulsed magnetron sputtering discharge2006In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 15, p. 154104-Article in journal (Refereed)
    Abstract [en]

    The effect of the high pulse current and the duty cycle on the deposition rate in high power pulsed magnetron sputtering (HPPMS) is investigated. Using a Cr target and the same average target current, deposition rates are compared to dc magnetron sputtering (dcMS) rates. It is found that for a peak target current density I-Tpd of up to 570 mA cm(-2), HPPMS and dcMS deposition rates are equal. For I-Tpd greater than 570 mA cm(-2), optical emission spectroscopy shows a pronounced increase of the Cr+/Cr-0 signal ratio. In addition, a loss of deposition rate, which is attributed to self-sputtering, is observed.

  • 14.
    Al-Hilli, S.M.
    et al.
    Göteborg University.
    Al-Mofarji, R.T.
    Göteborg University.
    Willander, Magnus
    Göteborg University.
    Zinc oxide nanorod for intracellular pH sensing2006In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, no 17, p. 073119-1-073119-3Article in journal (Refereed)
    Abstract [en]

      pH determination is a prerequisite for many biochemical and biological processes. The authors have used two methods, namely, the electrochemical potential method and the site binding method to study the sensitivity of zinc oxide (ZnO) nanorods for the use as intracellular pH sensing device. The dimensions of these nanorods were varied with radii between 50–300 nm and lengths between 2 and 10 μm. The ZnO nanorods showed a high sensitivity ≈ 59 mV per decade at room temperature for a pH range (1–14), assuming that the solution is water. This is expected due to the polar and nonpolar surfaces of the ZnO nanorods. 

  • 15. Ali, A.
    et al.
    Raza, Rizwan
    KTH, School of Industrial Engineering and Management (ITM), Energy Technology.
    Kaleem Ullah, M.
    Rafique, A.
    Wang, B.
    Zhu, Bin
    KTH, School of Industrial Engineering and Management (ITM), Energy Technology. Hubei University, China.
    Alkaline earth metal and samarium co-doped ceria as efficient electrolytes2018In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 4, article id 043902Article in journal (Refereed)
    Abstract [en]

    Co-doped ceramic electrolytes M0.1Sm0.1Ce0.8O2-δ (M = Ba, Ca, Mg, and Sr) were synthesized via co-precipitation. The focus of this study was to highlight the effects of alkaline earth metals in doped ceria on the microstructure, densification, conductivity, and performance. The ionic conductivity comparisons of prepared electrolytes in the air atmosphere were studied. It has been observed that Ca0.1Sm0.1Ce0.8O2-δ shows the highest conductivity of 0.124 Scm-1 at 650 °C and a lower activation energy of 0.48 eV. The cell shows a maximum power density of 630 mW cm-2 at 650 °C using hydrogen fuel. The enhancement in conductivity and performance was due to increasing the oxygen vacancies in the ceria lattice with the increasing dopant concentration. The bandgap was calculated from UV-Vis data, which shows a red shift when compared with pure ceria. The average crystallite size is in the range of 37-49 nm. DFT was used to analyze the co-doping structure, and the calculated lattice parameter was compared with the experimental lattice parameter.

  • 16.
    Alling, Björn
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hultberg, L
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Abrikosov, Igor
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology.
    Strong electron correlations stabilize paramagnetic cubic Cr1-xAlxN solid solutions2013In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 3Article in journal (Refereed)
    Abstract [en]

    The stability of rock salt structure cubic Cr1-xAlxN solid solutions at high Al content and high temperature has made it one of the most important materials systems for protective coating applications. We show that the strong electron correlations in a material with dynamic magnetic disorder is the underlying reason for the observed stability against isostructural decomposition. This is done by using the first-principles disordered local moments molecular dynamics technique, which allows us to simultaneously consider electronic, magnetic, and vibrational degrees of freedom.

  • 17.
    Alling, Björn
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics . Linköping University, The Institute of Technology.
    Höglund, Carina
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Hall-Wilton, R.
    European Spallat Source ESS AB.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Mixing thermodynamics of TM(1-x)Gd(x)N (TM=Ti, Zr, Hf) from first principles2011In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 24, p. 241911-Article in journal (Refereed)
    Abstract [en]

    The mixing thermodynamics of GdN with TiN, ZrN, and HfN is studied using first-principles methods. We find that while Ti(1-x)Gd(x)N has a strong preference for phase separation due to the large lattice mismatch, Zr(1-x)Gd(x)N and Hf(1-x)Gd(x)N readily mix, possibly in the form of ordered compounds. In particular, ZrGdN(2) is predicted to order in a rocksalt counterpart to the L1(1) structure at temperatures below 1020 K. These mixed nitrides are promising candidates as neutron absorbing, thermally and chemically stable, thin film materials.

  • 18.
    Alling, Björn
    et al.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Karimi, A.
    Institute of Physics of Complex Matter.
    Hultman, Lars
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
    Abrikosov, Igor
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    First-principles study of the effect of nitrogen vacancies on the decomposition pattern in cubic Ti1-xAlxN1-y2008In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, p. 071903-1-071903-3Article in journal (Refereed)
    Abstract [en]

      The effect of nitrogen substoichiometry on the isostructural phase stabilities of the cubic Ti1−xAlxN1−y system has been investigated using first-principles calculations. The preferred isostructural decomposition pattern in these metastable solid solutions was predicted from the total energy calculations on a dense concentration grid. Close to the stoichiometric Ti1−xAlxN1 limit, N vacancies increase the tendency for phase separation as N sticks to Al while the vacancies prefers Ti neighbors. For nitrogen depleated conditions, N sticks to Ti forming TiN (0<<1) while Al tends to form nitrogen-free fcc-Al or Al–Ti alloys.

  • 19.
    Alling, Björn
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics . Linköping University, The Institute of Technology.
    Odén, Magnus
    Linköping University, Department of Physics, Chemistry and Biology, Nanostructured Materials . Linköping University, The Institute of Technology.
    Hultman, Lars
    Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
    Abrikosov, Igor
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics . Linköping University, The Institute of Technology.
    Pressure enhancement of the isostructural cubic decomposition in Ti1−xAlxN2009In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 95, no 181906Article in journal (Refereed)
    Abstract [en]

    The influence of pressure on the phase stabilities of Ti1−xAlxN solid solutions has been studied using first principles calculations. We find that the application of hydrostatic pressure enhances the tendency for isostructural decomposition, including spinodal decomposition. The effect originates in the gradual pressure stabilization of cubic AlN with respect to the wurtzite structure and an increased isostructural cubic mixing enthalpy with increased pressure. The influence is sufficiently strong in the composition-temperature interval corresponding to a shoulder of the spinodal line that it could impact the stability of the material at pressures achievable in the tool-work piece contact during cutting operations

  • 20.
    Alvi, N H
    et al.
    University of Politecn Madrid, Spain .
    Soto Rodriguez, P E D
    University of Politecn Madrid, Spain .
    Gomez, V J
    University of Politecn Madrid, Spain .
    Kumar, Praveen
    University of Politecn Madrid, Spain .
    Amin, Gul
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Nur, Omer
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Willander, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Noetzel, R
    University of Politecn Madrid, Spain .
    Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots2012In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 15, p. 153110-Article in journal (Refereed)
    Abstract [en]

    We present a fast, highly sensitive, and efficient potentiometric glucose biosensor based on functionalized InN quantum-dots (QDs). The InN QDs are grown by molecular beam epitaxy. The InN QDs are bio-chemically functionalized through physical adsorption of glucose oxidase (GOD). GOD enzyme-coated InN QDs based biosensor exhibits excellent linear glucose concentration dependent electrochemical response against an Ag/AgCl reference electrode over a wide logarithmic glucose concentration range (1 x 10(-5) M to 1 x 10(-2) M) with a high sensitivity of 80mV/decade. It exhibits a fast response time of less than 2 s with good stability and reusability and shows negligible response to common interferents such as ascorbic acid and uric acid. The fabricated biosensor has full potential to be an attractive candidate for blood sugar concentration detection in clinical diagnoses. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758701]

  • 21.
    Alvi, N.H.
    et al.
    Universidad Politécnica de Madrid, Spain .
    Soto Rodriguez, P.E. D.
    Universidad Politécnica de Madrid, Spain .
    Kumar, Praveen
    Universidad Politécnica de Madrid, Spain .
    Gomez, V.J.
    Universidad Politécnica de Madrid, Spain .
    Aseev, P.
    Universidad Politécnica de Madrid, Spain .
    Alvi, A.H.
    Government College University, Faisalabad, Pakistan .
    Alvi, M.A.
    Government College University, Faisalabad, Pakistan .
    Willander, Magnus
    Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
    Noetzel, R.
    Universidad Politécnica de Madrid, Spain .
    Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network2014In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, no 22, p. 223104-1-223104-3Article in journal (Refereed)
    Abstract [en]

    We investigate photoelectrochemical water splitting by a spontaneously formed In-rich InGaN nanowall network, combining the material of choice with the advantages of surface texturing for light harvesting by light scattering. The current density for the InGaN-nanowalls-photoelectrode at zero voltage versus the Ag/AgCl reference electrode is 3.4 mA cm(-2) with an incident-photon-to-current-conversion efficiency (IPCE) of 16% under 350 nm laser illumination with 0.075 W.cm(-2) power density. In comparison, the current density for a planar InGaN-layer-photoelectrode is 2 mA cm(-2) with IPCE of 9% at zero voltage versus the Ag/AgCl reference electrode. The H-2 generation rates at zero externally applied voltage versus the Pt counter electrode per illuminated area are 2.8 and 1.61 mu mol.h(-1).cm(-2) for the InGaN nanowalls and InGaN layer, respectively, revealing similar to 57% enhancement for the nanowalls. (C) 2014 AIP Publishing LLC.

  • 22.
    Amloy, Supaluck
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Karlsson, Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Andersson, T. G.
    Applied Semiconductor Physics, Department of Microtechnology and Nanoscience, Chalmers University.
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    On the polarized emission from exciton complexes in GaN quantum dots2012In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 100, no 021901Article in journal (Refereed)
    Abstract [en]

    The optical linear polarization properties of exciton complexes in asymmetric Stranski-Krastanov grown GaN quantum dots have been investigated experimentally and theoretically. It is demonstrated that the polarization angle and the polarization degree can be conveniently employed to associate emission lines in the recorded photoluminescence spectra to a specific dot. The experimental results are in agreement with configuration interaction computations, which predict similar polarization degrees for the exciton and the biexciton (within 10%) in typical GaN quantum dots. The theory further predicts that the polarization degree can provide information about the charge state of the dot.

  • 23.
    Amloy, Supaluck
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Moskalenko, Evgenii
    Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
    Eriksson, M
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Karlsson, K Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Chen, Y T
    Academic Sinica, Taiwan .
    Chen, K H
    Academic Sinica, Taiwan National Taiwan University, Taiwan .
    Hsu, H C
    National Taiwan University, Taiwan .
    Hsiao, C L
    National Taiwan University, Taiwan .
    Chen, L C
    National Taiwan University, Taiwan .
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot2012In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 6Article in journal (Refereed)
    Abstract [en]

    The dynamics of the exciton and the biexciton related emission from a single InGaN quantum dot (QD) have been measured by time-resolved microphotoluminescence spectroscopy. An exciton-biexciton pair of the same QD was identified by the combination of power dependence and polarization-resolved spectroscopy. Moreover, the spectral temperature evolution was utilized in order to distinguish the biexciton from a trion. Both the exciton and the biexciton related emission reveal mono-exponential decays corresponding to time constants of similar to 900 and similar to 500 ps, respectively. The obtained lifetime ratio of similar to 1.8 indicates that the QD is small, with a size comparable to the exciton Bohr radius.

  • 24.
    Amloy, Supaluck
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Yu, K. H.
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Karlsson, Fredrik
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Farivar, R
    Applied Semiconductor Physics, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg, Sweden .
    Andersson, T. G.
    Applied Semiconductor Physics, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg, Sweden .
    Holtz, Per-Olof
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Size dependent biexciton binding energies in GaN quantum dots2011In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 25, no 251903Article in journal (Refereed)
    Abstract [en]

    Single GaN/Al(Ga)N quantum dots (QDs) have been investigated by means of microphotoluminescence. Emission spectra related to excitons and biexcitons have been identified by excitation power dependence and polarization resolved spectroscopy. All investigated dots exhibit a strong degree of linear polarization (∼90%). The biexciton binding energy scales with the dot size. However, both positive and negative binding energies are found for the studied QDs. These results imply that careful size control of III-Nitride QDs would enable the emission of correlated photons with identical frequencies from the cascade recombination of the biexciton, with potential applications in the area of quantum information processing.

  • 25. Andersson, D. A.
    et al.
    Simak, S. I.
    Skorodumova, Natalia V.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
    Abrikosov, I. A.
    Johansson, Börje
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
    Redox properties of CeO2-MO2 (M=Ti, Zr, Hf, or Th) solid solutions from first principles calculations2007In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 3, p. 031909-Article in journal (Refereed)
    Abstract [en]

    The authors have used density functional theory calculations to investigate how the redox thermodynamics and kinetics of CeO2 are influenced by forming solid solutions with TiO2, ZrO2, HfO2, and ThO2. Reduction is facilitated by dissolving TiO2 (largest improvement), HfO2, or ZrO2 (least improvement), while ThO2 makes reduction slightly more difficult. The migration barrier is much lower in the neighborhood of a Ti (largest decrease), Hf, or Zr (least decrease), while the binding energy of solute ions and vacancies increases in the same sequence. They rationalize the properties of ceria solid solutions in terms of defect cluster relaxations.

  • 26.
    Andersson, D.A.
    et al.
    KTH.
    Simak, Sergey
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Skorodumova, N.V.
    Uppsala universitet.
    Abrikosov, Igor
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .
    Johansson, B.
    KTH, och Uppsala universitet.
    Redox properties of CeO2-MO2 (M=Ti, Zr, Hf, or Th) solid solutions from first principles calculations2007In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, p. 31909-1-31919-3Article in journal (Refereed)
  • 27.
    Andersson, David A.
    et al.
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Simak, S. I.
    Skorodumova, N. V.
    Abrikosov, I. A.
    Johansson, Börje
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
    Redox properties of CeO2-MO2 MO2 (M=Ti, Zr, Hf or Th) solid solutions from first principles calculations2007In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 3, p. 031909-Article in journal (Refereed)
    Abstract [en]

    The authors have used density functional theory calculations to investigate how the redox thermodynamics and kinetics of CeO2 are influenced by forming solid solutions with TiO2, ZrO2, HfO2, and ThO2. Reduction is facilitated by dissolving TiO2 (largest improvement), HfO2, or ZrO2 (least improvement), while ThO2 makes reduction slightly more difficult. The migration barrier is much lower in the neighborhood of a Ti (largest decrease), Hf, or Zr (least decrease), while the binding energy of solute ions and vacancies increases in the same sequence. They rationalize the properties of ceria solid solutions in terms of defect cluster relaxations.

  • 28.
    Andersson, Jon M.
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Wallin, Erik
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Münger, E. Peter
    Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics . Linköping University, The Institute of Technology.
    Helmersson, Ulf
    Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics . Linköping University, The Institute of Technology.
    Molecular content of the deposition flux during reactive Ar/O2 magnetron sputtering of Al2006In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 05, p. Art. No. 054101 JAN 30 2006-Article in journal (Refereed)
    Abstract [en]

    The deposition flux obtained during reactive radio frequency magnetron sputtering of an Al target in Ar/O2 gas mixtures was studied by mass spectrometry. The results show significant amounts of molecular AlO+ (up to 10% of the Al+ flux) in the ionic flux incident onto the substrate. In the presence of ~10–4 Pa H2O additional OH+ and AlOH+ were detected, amounting to up to about 100% and 30% of the Al+ flux, respectively. Since the ions represent a small fraction of the total deposition flux, an estimation of the neutral content was also made. These calculations show that, due to the higher ionization probability of Al, the amount of neutral AlO in the deposition flux is of the order of, or even higher than, the amount of Al. These findings might be of great aid when explaining the alumina thin film growth process.

  • 29.
    Andersson, Lars Mattias
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics . Linköping University, The Institute of Technology.
    Zhang, Fengling
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics . Linköping University, The Institute of Technology.
    Inganäs, Olle
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics . Linköping University, The Institute of Technology.
    Stoichiometry, mobility, and performance in bulk heterojunction solar cells2007In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 7, p. 071108-Article in journal (Refereed)
    Abstract [en]

    Bipolar transport in blends of a copolymer of fluorene, thiophene and electron accepting groups, and the substituted fullerene [6,6]-phenyl-C61-butyric acid methylester have been studied through charge extraction by linearly increasing voltage on solar cells and with field effect transistors. Between 10% and 90% polymer has been used and the results show a clear correlation to solar cell performance. Optimal solar cells comprise 20% polymer and have a power conversion efficiency of 3.5%. The electron mobility is increasing strongly with fullerene content, but is always lower than the hole mobility, thus explaining the low amount of polymer in optimized devices.

  • 30.
    Andersson, Mattias
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.
    Hedstrom, Svante
    Lund University, Sweden .
    Persson, Petter
    Lund University, Sweden .
    Conformation sensitive charge transport in conjugated polymers2013In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 103, no 21, p. 213303-Article in journal (Refereed)
    Abstract [en]

    Temperature dependent charge carrier mobility measurements using field effect transistors and density functional theory calculations are combined to show how the conformation dependent frontier orbital delocalization influences the hole-and electron mobilities in a donor-acceptor based polymer. A conformationally sensitive lowest unoccupied molecular orbital results in an electron mobility that decreases with increasing temperature above room temperature, while a conformationally stable highest occupied molecular orbital is consistent with a conventional hole mobility behavior and also proposed to be one of the reasons for why the material works well as a hole transporter in amorphous bulk heterojunction solar cells.

  • 31.
    Andersson, Peter
    et al.
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Kugler, Thomas
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Berggren, Magnus
    Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
    Switchable Optical Polarizer Based on Electrochromism in Stretch-Aligned Polyaniline2003In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 83, no 7, p. 1307-1309Article in journal (Refereed)
    Abstract [en]

    We report on the polarizing electrochromic (EC) effect of a conjugated polymer. This has been achieved in a planar flexible electrochemical device cell comprised of a patterned stretch-aligned thin film of polyaniline and an electrolyte, all made on a polyethylene foil substrate. The resulting device exhibits polarized absorption characteristics, of a dichroic ratio of 4, that can be controlled by the voltage applied. Also, thin flexible EC polarizers have been realized by combining two stretch-aligned polyaniline films with orthogonal stretching direction. In the resulting EC polarizer the orientation of the polarized absorption can be switched between two orthogonal directions, depending on the voltage applied.

  • 32. Andersson, R
    et al.
    Baglin, J
    Dempsey, J
    Hammer, W
    d'Heurle, F
    Petersson, CS
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Nucleation controlled thin film interactions: Three silicides1979In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 35, p. 285-Article in journal (Refereed)
  • 33.
    Andersson, Viktor
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.
    Huang, David M
    Chemical Engineering and Materials Science, University of California, Davis, Davis, California 95616, USA.
    Moule, Adam J
    Chemical Engineering and Materials Science, University of California, Davis, Davis, California 95616, USA.
    Inganäs, Olle
    Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.
    An optical spacer is no panacea for light collection in organic solar cells2009In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 94, no 4, p. 043302-Article in journal (Refereed)
    Abstract [en]

    The role of an optical spacer layer has been examined by optical simulations of organic solar cells with various bandgaps. The simulations have been performed with the transfer matrix method and the finite element method. The results show that no beneficial effect can be expected by adding an optical spacer to a solar cell with an already optimized active layer thickness.

  • 34.
    Andreasson, Björn Pererik
    et al.
    Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland.
    Janousch, M.
    Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland.
    Staub, U.
    Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland.
    Meijer, G. I.
    IBM Research, Zurich Research Laboratory, Rüschlikon, Switzerland.
    Spatial distribution of oxygen vacancies in Cr-doped SrTiO3 during an electric-field-driven insulator-to-metal transition2009In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 94, no 1, p. Article number: 013513-Article in journal (Refereed)
    Abstract [en]

    Spatially resolved x-ray fluorescence maps are presented that show the introduction and the evolution of oxygen vacancies in chromium-doped strontium titanate during an electric-field-driven insulator-to-metal transition. The vacancies are introduced at the anode and diffuse through the crystal toward the cathode. The spatial distribution of vacancies is explained by a model describing the electrical breakdown as a percolation process. Strong differences in the vacancy distribution were found when the transition took place in air and in a hydrogen-enriched atmosphere. In air, the vacancies disappeared from the surface, whereas in the reducing hydrogen atmosphere, they remained at the surface. © 2009 American Institute of Physics.

  • 35.
    Andringa, Anne-Marije
    et al.
    University of Groningen, Netherlands; Philips Research Labs, Netherlands.
    Christian Roelofs, W. S.
    Philips Research Labs, Netherlands; Technical University of Eindhoven, Netherlands.
    Sommer, Michael
    University of Bayreuth, Germany; University of Freiburg, Germany.
    Thelakkat, Mukundan
    University of Bayreuth, Germany.
    Kemerink, Martijn
    Technical University of Eindhoven, Netherlands.
    de Leeuw, Dago M.
    University of Groningen, Netherlands; Philips Research Labs, Netherlands.
    Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors2012In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 15, article id 153302Article in journal (Refereed)
    Abstract [en]

    Field-effect transistors have emerged as NO2 sensors. The detection relies on trapping of accumulated electrons, leading to a shift of the threshold voltage. To determine the location of the trapped electrons we have delaminated different semiconductors from the transistors with adhesive tape and measured the surface potential of the revealed gate dielectric with scanning Kelvin probe microscopy. We unambiguously show that the trapped electrons are not located in the semiconductor but at the gate dielectric. The microscopic origin is discussed. Pinpointing the location paves the way to optimize the sensitivity of NO2 field-effect sensors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758697]

  • 36. Anversa, Jonas
    et al.
    Chakraborty, Sudip
    Piquini, Paulo
    Ahuja, Rajeev
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
    High pressure driven superconducting critical temperature tuning in Sb2Se3 topological insulator2016In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 108, no 21, article id 212601Article in journal (Refereed)
    Abstract [en]

    In this letter, we are reporting the change of superconducting critical temperature in Sb2Se3 topological insulator under the influence of an external hydrostatic pressure based on first principles electronic structure calculations coupled with Migdal-Eliashberg model. Experimentally, it was shown previously that Sb2Se3 was undergoing through a transition to a superconducting phase when subjected to a compressive pressure. Our results show that the critical temperature increases up to 6.15K under the pressure unto 40GPa and, subsequently, drops down until 70 GPa. Throughout this pressure range, the system is preserving the initial Pnma symmetry without any structural transformation. Our results suggest that the possible relevant mechanism behind the superconductivity in Sb2Se3 is primarily the electron-phonon coupling.

  • 37.
    Anversa, Jonas
    et al.
    Univ Fed Santa Maria, Dept Fis, BR-97105900 Santa Maria, RS, Brazil.;Fac Meridional, Escola Engn Civil, BR-99070220 Passo Fundo, RS, Brazil..
    Chakraborty, Sudip
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory.
    Piquini, Paulo
    Univ Fed Santa Maria, Dept Fis, BR-97105900 Santa Maria, RS, Brazil..
    Ahuja, Rajeev
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory. Royal Inst Technol KTH, Dept Mat & Engn, Appl Mat Phys, S-10044 Stockholm, Sweden..
    High pressure driven superconducting critical temperature tuning in Sb2Se3 topological insulator2016In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 108, no 21, article id 212601Article in journal (Refereed)
    Abstract [en]

    In this letter, we are reporting the change of superconducting critical temperature in Sb2Se3 topological insulator under the influence of an external hydrostatic pressure based on first principles electronic structure calculations coupled with Migdal-Eliashberg model. Experimentally, it was shown previously that Sb2Se3 was undergoing through a transition to a superconducting phase when subjected to a compressive pressure. Our results show that the critical temperature increases up to 6.15K under the pressure unto 40GPa and, subsequently, drops down until 70 GPa. Throughout this pressure range, the system is preserving the initial Pnma symmetry without any structural transformation. Our results suggest that the possible relevant mechanism behind the superconductivity in Sb2Se3 is primarily the electron-phonon coupling. Published by AIP Publishing.

  • 38. Ao, X. Y.
    et al.
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
    Negative refraction of left-handed behavior in porous alumina with infiltrated silver at an optical wavelength2005In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 87, no 10Article in journal (Refereed)
  • 39. Ao, Xianyu
    et al.
    Liu, Liu
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Wosinski, Lech
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    He, Sailing
    KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
    Polarization beam splitter based on a two-dimensional photonic crystal of pillar type2006In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Applied physics letters, Vol. 89, no 17, p. 171115-Article in journal (Refereed)
    Abstract [en]

    Negatively and positively refractive behaviors are achieved in a two-dimensional photonic crystal of pillar type for TE and TM polarizations, respectively, at the same frequency. The photonic crystal is formed by a triangular lattice of silicon pillars of finite height on a silicon substrate. A polarization beam splitter based on such a photonic-crystal slab is demonstrated. Measurements at near infrared wavelengths indicate that two beams of different polarizations can be split with an extinction ratio of over 10 dB in a wide wavelength range.

  • 40. Ao, Xianyu
    et al.
    Tong, Xili
    Kim, Dong Sik
    Zhang, Lianbing
    Knez, Mato
    Mueller, Frank
    He, Sailing
    KTH, School of Electrical Engineering (EES), Electromagnetic Engineering. KTH, School of Information and Communication Technology (ICT), Centres, Zhejiang-KTH Joint Research Center of Photonics, JORCEP.
    Schmidt, Volker
    Black silicon with controllable macropore array for enhanced photoelectrochemical performance2012In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 101, no 11, p. 111901-Article in journal (Refereed)
    Abstract [en]

    Macroporous silicon with multiscale texture for reflection suppression and light trapping was achieved through a controllable electrochemical etching process. It was coated with TiO2 by atomic layer deposition, and used as the photoanode in photocatalytic water splitting. A conformal pn-junction was also built-in in order to split water without external bias. A 45% enhancement in photocurrent density was observed after black silicon etching. In comparison with nano-structured silicon, the etching process here has neither metal contamination nor requirement of vacuum facilities.

  • 41.
    Aradi, B.
    et al.
    Department of Atomic Physics, Budapest Univ. of Technol. and Econ., Budafoki út 8, Budapest, H-1111, Hungary.
    Deak, P.
    Deák, P., Department of Atomic Physics, Budapest Univ. of Technol. and Econ., Budafoki út 8, Budapest, H-1111, Hungary.
    Nguyen, Tien Son
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
    Janzén, Erik
    Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
    Choyke, W.J.
    Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States.
    Devaty, R.P.
    Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, United States.
    Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide2001In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 17, p. 2746-2748Article in journal (Refereed)
    Abstract [en]

    The geometry and formation energy of substitutional B and Al dopants as well as their complexes with hydrogen have been calculated in 4H-SiC using first-principles methods. Our results show that boron selecting the silicon site and, therefore, getting activated as a shallow acceptor depends on the presence of hydrogen which is promoted into the crystal by boron itself. Without hydrogen, boron would mostly be incorporated at the carbon site. Aluminum does not show this behavior: it always selects the silicon site and is incorporated independently of hydrogen. © 2001 American Institute of Physics.

  • 42. Araujo, C. M.
    et al.
    Scheicher, R. H.
    Ahuja, Rajeev
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    Thermodynamic analysis of hydrogen sorption reactions in Li-Mg-N-H systems2008In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 2Article in journal (Refereed)
    Abstract [en]

    We report a comprehensive first-principles study of the thermodynamics of the hydrogen release reaction from xLiH-yMg(NH2)(2) mixtures involving the composition ratios (x=2, y=1), (x=8, y=3), and (x=12, y=3), with special emphasis on the effect of the different intermediate steps. For all three mixing ratios of LiH/Mg(NH2)(2) we find that the hydrogen release is initiated by the same reaction with an enthalpy of 46.1 kJ/mol of H-2 in excellent agreement with recent experimental results. Additionally, we also investigated the substitution of LiH by MgH2 as reaction partner of Mg(NH2)(2) in the fully hydrogenated state.

  • 43. Araujo, C. M.
    et al.
    Scheicher, R. H.
    Jena, P.
    Ahuja, Rajeev
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
    On the structural and energetic properties of the hydrogen absorber Li2Mg(NH)(2)2007In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 9Article in journal (Refereed)
    Abstract [en]

    The authors have performed density functional theory based calculations of several possible conformations for the crystal structure of Li2Mg(NH)(2) and they confirm the alpha phase, resolved from both x-ray and neutron diffraction data, as the ground-state configuration. It is also found that although the N-H bond is stronger in Li2Mg(NH)(2) than in Li2NH, hydrogen release from Li2Mg(NH)(2)/LiH mixture displays more favorable thermodynamics than that from the Li2NH/LiH mixture. The insights gained from this seemingly counterintuitive result should prove helpful in the search for promising hydrogen storage materials.(c) 2007 American Institute of Physics.

  • 44.
    Araujo, C. Moyses
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy.
    Kapilashrami, Mukes
    Jun, Xu
    Jayakumar, O. D.
    Nagar, Sandeep
    Wu, Yan
    Århammar, Cecilia
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy.
    Johansson, Börje
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy.
    Belova, Lyubov
    Ahuja, Rajeev
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy.
    Gehring, Gillian A.
    Rao, K. V.
    Room temperature ferromagnetism in pristine MgO thin films2010In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 23, p. 232505-Article in journal (Refereed)
    Abstract [en]

    Robust ferromagnetic ordering at, and well above room temperature is observed in pure transparent MgO thin films (<170 nm thick) deposited by three different techniques. Careful study of the wide scan x-ray photoelectron spectroscopy rule out the possible presence of any magnetic contaminants. In the magnetron sputtered films, we observe magnetic phase transitions as a function of film thickness. The maximum saturation magnetization of 5.7 emu/cm(3) is measured on a 170 nm thick film. The films above 500 nm are found to be diamagnetic. Ab initio calculations suggest that the ferromagnetism is mediated by cation vacancies.

  • 45.
    Araujo, C. Moysés
    et al.
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
    Kapilashrami, Mukes
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
    Jun, Xu
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
    Jayakumar, Onattu D.
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
    Nagar, Sandeep
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
    Wu, Yan
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
    Århammar, Cecilia
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
    Johansson, Börje
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
    Belova, Lyubov
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
    Ahuja, Rajeev
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
    Gehring, Gillian A.
    Rao, K. Venkat
    KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
    Room temperature ferromagnetism in pristine MgO thin films2010In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, no 23Article in journal (Refereed)
    Abstract [en]

    Robust ferromagnetic ordering at, and well above room temperature is observed in pure transparent MgO thin films (<170 nm thick) deposited by three different techniques. Careful study of the wide scan x-ray photoelectron spectroscopy rule out the possible presence of any magnetic contaminants. In the magnetron sputtered films, we observe magnetic phase transitions as a function of film thickness. The maximum saturation magnetization of 5.7 emu/cm(3) is measured on a 170 nm thick film. The films above 500 nm are found to be diamagnetic. Ab initio calculations suggest that the ferromagnetism is mediated by cation vacancies.

  • 46.
    Araujo, Carlos Moyses
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics, Condensed Matter Theory.
    Ahuja, Rajeev
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics, Condensed Matter Theory.
    Osorio Guillén, Jorge Mario
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics, Condensed Matter Theory.
    Jena, P
    Role of titanium in hydrogen desorption in crystalline sodium alanate2005In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 25, article id 251913Article in journal (Refereed)
    Abstract [en]

    The role of Ti in improving the thermodynamics of hydrogen desorption in crystalline sodium alanate (NaAlH4) has been investigated by using the density functional theory. The total energy calculations reveal that Ti prefers to occupy the Na site over that of the Al site when the atomic energies are used as the reference. However, the use of the cohesive energies of Al, Na, and Ti leads to the Al site being the least unfavourable site. Irrespective of whether Ti occupies the Na or the Al site, the energy necessary to remove a hydrogen atom from Ti substituted sodium alanate is significantly lowered from that of the pure alanate. The understanding gained here may help in designing hydrogen storage materials suitable for industrial applications.

  • 47.
    Araújo, C. Moysés
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics, Condensed Matter Theory.
    Scheicher, Ralph H.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics, Condensed Matter Theory.
    Ahuja, Rajeev
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics, Condensed Matter Theory.
    Thermodynamic analysis of hydrogen sorption reactions in Li-Mg-N-H systems2008In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 2, p. 021907-Article in journal (Refereed)
    Abstract [en]

    We report a comprehensive first-principles study of the thermodynamics of the hydrogen release reaction from xLiH-yMg(NH2)(2) mixtures involving the composition ratios (x=2, y=1), (x=8, y=3), and (x=12, y=3), with special emphasis on the effect of the different intermediate steps. For all three mixing ratios of LiH/Mg(NH2)(2) we find that the hydrogen release is initiated by the same reaction with an enthalpy of 46.1 kJ/mol of H-2 in excellent agreement with recent experimental results. Additionally, we also investigated the substitution of LiH by MgH2 as reaction partner of Mg(NH2)(2) in the fully hydrogenated state.

  • 48.
    Araújo, C. Moysés
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
    Scheicher, Ralph H.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
    Jena, Puru
    Ahuja, Rajeev
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics.
    On the structural and energetic properties of the hydrogen absorber Li2Mg(NH)22007In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 9, p. 091924-Article in journal (Refereed)
    Abstract [en]

    The authors have performed density functional theory based calculations of several possible conformations for the crystal structure of Li2Mg(NH)2 and they confirm the α phase, resolved from both x-ray and neutron diffraction data, as the ground-state configuration. It is also found that although the N-H bond is stronger in Li2Mg(NH)2 than in Li2NH, hydrogen release from Li2Mg(NH)2/LiH mixture displays more favorable thermodynamics than that from the Li2NH/LiH mixture. The insights gained from this seemingly counterintuitive result should prove helpful in the search for promising hydrogen storage materials.

  • 49.
    Armakavicius, Nerijus
    et al.
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Stanishev, Vallery
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Knight, Sean
    Univ Nebraska, NE 68588 USA.
    Kuhne, Philipp
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Schubert, Mathias
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering. Univ Nebraska, NE 68588 USA; Leibniz Inst Polymer Res Dresden, Germany.
    Darakchieva, Vanya
    Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
    Electron effective mass in In0.33Ga0.67N determined by mid-infrared optical Hall effect2018In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 8, article id 082103Article in journal (Refereed)
    Abstract [en]

    Mid-infrared optical Hall effect measurements are used to determine the free charge carrier parameters of an unintentionally doped wurtzite-structure c-plane oriented In0.33Ga0.67N epitaxial layer. Room temperature electron effective mass parameters of m(perpendicular to)* = (0.205 +/- 0.013) m(0) and m(parallel to)* = (0.204 +/- 0.016) m(0) for polarization perpendicular and parallel to the c-axis, respectively, were determined. The free electron concentration was obtained as (1.7 +/- 0.2) x 10(19) cm(-3). Within our uncertainty limits, we detect no anisotropy for the electron effective mass parameter and we estimate the upper limit of the possible effective mass anisotropy as 7%. We discuss the influence of conduction band nonparabolicity on the electron effective mass parameter as a function of In content. The effective mass parameter is consistent with a linear interpolation scheme between the conduction band mass parameters in GaN and InN when the strong nonparabolicity in InN is included. The In0.33Ga0.67N electron mobility parameter was found to be anisotropic, supporting previous experimental findings for wurtzite-structure GaN, InN, and AlxGa1-xN epitaxial layers with c-plane growth orientation. Published by AIP Publishing.

  • 50.
    Arnalds, Unnar B.
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.
    Ahlberg, Martina
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.
    Brewer, Matthew S.
    Kapaklis, Vassilios
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.
    Papaioannou, Evangelos Th.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.
    Karimipour, Masoud
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy.
    Korelis, Panagiotis
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.
    Stein, Aaron
    Olafsson, Sveinn
    Hase, Thomas P. A.
    Hjörvarsson, Björgvin
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Physics.
    Thermal transitions in nano-patterned XY-magnets2014In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 4, p. 042409-Article in journal (Refereed)
    Abstract [en]

    We have fabricated ultra-thin disc shaped islands wherein shape anisotropy confines the moment to the island plane, creating XY-like superspins. At low temperatures, the superspins are blocked, and, as the temperature is increased, they undergo a transition into a superparamagnetic state. The onset of this dynamic superspin state scales with the diameter of the islands, and it persists up to a temperature governed by the intrinsic ordering temperature of the island material defining a range in temperature in which dynamic behavior of the magnetic islands can be obtained.

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