Change search
ReferencesLink to record
Permanent link

Direct link
Structures of dislocations in GaAs and their modification by impurities
Department of Physics, University of Exeter.
Department of Physics, University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.
Department of Computer Science, University of Exeter.
1994 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 50, 17717-17720 p.Article in journal (Refereed) Published
Abstract [en]

Local density functional theory is used to show that both α and β dislocations in GaAs are reconstructed. This is done by relaxing large 158-atom H-terminated clusters of GaAs containing 90° partial dislocations. The reconstruction is strongly influenced by impurities: acceptor pairs destroy the reconstruction of β partials but strengthen it for α dislocations. Donors have opposite effects. The implication of these results for the pinning of dislocations in GaAs is discussed.

Place, publisher, year, edition, pages
1994. Vol. 50, 17717-17720 p.
Research subject
Scientific Computing
URN: urn:nbn:se:ltu:diva-7445DOI: 10.1103/PhysRevB.50.17717Local ID: 5d355bb0-12ed-11dd-ada4-000ea68e967bOAI: diva2:980334
Godkänd; 1994; 20080425 (ysko)Available from: 2016-09-29 Created: 2016-09-29Bibliographically approved

Open Access in DiVA

fulltext(117 kB)2 downloads
File information
File name FULLTEXT01.pdfFile size 117 kBChecksum SHA-512
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Search in DiVA

By author/editor
Öberg, Sven
By organisation
Mathematical Science
In the same journal
Physical Review B Condensed Matter

Search outside of DiVA

GoogleGoogle Scholar
Total: 2 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 2 hits
ReferencesLink to record
Permanent link

Direct link