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Structures of dislocations in GaAs and their modification by impurities
Department of Physics, University of Exeter.
Department of Physics, University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
Department of Computer Science, University of Exeter.
1994 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 50, 17717-17720 p.Article in journal (Refereed) Published
Abstract [en]

Local density functional theory is used to show that both α and β dislocations in GaAs are reconstructed. This is done by relaxing large 158-atom H-terminated clusters of GaAs containing 90° partial dislocations. The reconstruction is strongly influenced by impurities: acceptor pairs destroy the reconstruction of β partials but strengthen it for α dislocations. Donors have opposite effects. The implication of these results for the pinning of dislocations in GaAs is discussed.

Place, publisher, year, edition, pages
1994. Vol. 50, 17717-17720 p.
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-7445DOI: 10.1103/PhysRevB.50.17717Local ID: 5d355bb0-12ed-11dd-ada4-000ea68e967bOAI: oai:DiVA.org:ltu-7445DiVA: diva2:980334
Note
Godkänd; 1994; 20080425 (ysko)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2017-11-24Bibliographically approved

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Öberg, Sven

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