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Di-Carbon defects in annealed highly carbon doped GaAs
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg.
Imperial College of Science.
Imperial College of Science.
University of Liverpool.
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1997 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 78, no 1, 74-77 p.Article in journal (Refereed) Published
Abstract [en]

Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm -1 in GaAs codoped with 12C and 13C after annealing at 850 °C with concomitant loss of vibrational scattering from CAs. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced CAs) atom by an undisplaced CAs acceptor. Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824, and 1788 cm -1 from a different C-C complex.

Place, publisher, year, edition, pages
1997. Vol. 78, no 1, 74-77 p.
Keyword [en]
Raman spectroscopy, density functional theory, doping, diffusion, semiconductors, III-V, arsenides, GaAs, Natural sciences - Physics, Materials science - Functional materials
Keyword [sv]
Naturvetenskap - Fysik, Teknisk materialvetenskap - Funktionella material
Research subject
Scientific Computing
URN: urn:nbn:se:ltu:diva-6783DOI: 10.1103/PhysRevLett.78.74Local ID: 513cd7c0-15c7-11dd-b7d2-000ea68e967bOAI: diva2:979669
Godkänd; 1997; 20080429 (ysko)Available from: 2016-09-29 Created: 2016-09-29Bibliographically approved

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