Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si
2000 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 222, no 1, 133-140 p.Article in journal (Refereed) Published
The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri- and tetra-self-interstitial defects. It is suggested that the formation of these defects on dislocation cores could lead to the D1 to D4 photoluminescent bands linked to dislocations in Si and SiGe.
Place, publisher, year, edition, pages
2000. Vol. 222, no 1, 133-140 p.
Research subject Scientific Computing
IdentifiersURN: urn:nbn:se:ltu:diva-2923DOI: 10.1002/1521-3951(200011)222:13.0.CO;2-DLocal ID: 0a7f5330-1379-11dd-b7d2-000ea68e967bOAI: oai:DiVA.org:ltu-2923DiVA: diva2:975777
Validerad; 2000; 20080426 (ysko)2016-09-292016-09-29Bibliographically approved