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Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si
University of Exeter.
University of Exeter.
University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.
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2000 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 222, no 1, 133-140 p.Article in journal (Refereed) Published
Abstract [en]

The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri- and tetra-self-interstitial defects. It is suggested that the formation of these defects on dislocation cores could lead to the D1 to D4 photoluminescent bands linked to dislocations in Si and SiGe.

Place, publisher, year, edition, pages
2000. Vol. 222, no 1, 133-140 p.
Research subject
Scientific Computing
URN: urn:nbn:se:ltu:diva-2923DOI: 10.1002/1521-3951(200011)222:13.0.CO;2-DLocal ID: 0a7f5330-1379-11dd-b7d2-000ea68e967bOAI: diva2:975777
Validerad; 2000; 20080426 (ysko)Available from: 2016-09-29 Created: 2016-09-29Bibliographically approved

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Öberg, Sven
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