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Shallow acceptors in GaN
University of Exeter.
University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.
University of Newcastle Upon Tyne.
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 13, 132105- p.Article in journal (Refereed) Published
Abstract [en]

Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of two acceptors. One is due to Mg and the other labeled A1 has a shallower acceptor defect. The authors investigate likely candidates for this shallow acceptor and conclude that CN is the most likely possibility. The authors also show that the CN is passivated by H and the passivated complex is more stable than MgGa-H

Place, publisher, year, edition, pages
2007. Vol. 91, no 13, 132105- p.
Research subject
Scientific Computing
URN: urn:nbn:se:ltu:diva-2874DOI: 10.1063/1.2776852Local ID: 098aa5b0-7707-11dc-80da-000ea68e967bOAI: diva2:975728
Validerad; 2007; 20071010 (evan)Available from: 2016-09-29 Created: 2016-09-29Bibliographically approved

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