Electromigration behavior of Cu metallization interfacing with Ta versus TaN at high temperatures
2016 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 34, no 6, 060603Article in journal (Refereed) Published
High-temperature stability of Cu-based interconnects is of technological importance for electronic circuits based on wide band gap semiconductors. In this study, different metal stack combinations using Ta or TaN as capping- and/or barrier-layer, in the configuration cap/Cu/barrier, are evaluated electrically and morphologically prior to and after high-temperature treatments. The symmetric combinations Ta/Cu/Ta and TaN/Cu/TaN are characterized by a low and stable sheet resistance after annealing up to 700 °C. Asymmetric combinations of Ta/Cu/TaN and TaN/Cu/Ta, however, display an increase in sheet resistance values after annealing at 500 °C and above. This increase in sheet resistance is considered to result from Ta diffusion into the grain boundaries of the Cu film. The preliminary electromigration studies on the TaN/Cu/Ta and TaN/Cu/TaN structures show a twofold higher activation energy and a tenfold longer lifetime for the former, thus suggesting an important role of the interface between Cu and the cap and/or barrier.
Place, publisher, year, edition, pages
2016. Vol. 34, no 6, 060603
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:uu:diva-300795DOI: 10.1116/1.4967372ISI: 000389530000054OAI: oai:DiVA.org:uu-300795DiVA: diva2:952462
FunderSwedish Foundation for Strategic Research , RE10-0011Swedish Foundation for Strategic Research , RIF-14-0053