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InP/Si Template for Photonic Application
KTH, School of Information and Communication Technology (ICT).
2015 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

In this work an epitaxial layer of Indium Phosphide (InP) has been grown on top of a silicon substrate using the Corrugated Epitaxial Lateral Overgrowth (CELOG) technique. The grown InP CELOG top layer typically has a poor surface roughness and planarity. Before this surface can be used for any processing it has to be smooth and planarized. For this purpose a two-step Chemical Mechanical Polishing (CMP) technique has been investigated and developed. In the first step commercially available Chemlox has been used to planarize the sample. In the second step Citric Acid (CA) and sodium hypochlorite (NaClO) has been mixed together to form abrasive-free polishing slurry. The second step has been developed to remove defects introduced by the first step. This surface is prepared to demonstrate that a photonic device such as a quantum well can be realized in a Photonic Integrated Circuit (PIC). A quantum well was grown on the polished CELOG InP/Si sample and measured with Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD) and Photoluminescence (PL). The roughness was improved with CMP from 33.2 nm to 12.4 nm. However the quantum well did not give any response in the PL measurements.

Abstract [sv]

I detta arbete har ett epitaxiellt lager indiumfosfid (InP) blivit växt på ett kiselsubstrat med hjälp av en korrugerad epitaxial lateral överväxt (CELOG) teknik. Det översta lagret av den CELOG växta ytan har ofta en väldigt ojämn yta. Innan denna yta kan användas till någon fortsatt utveckling måste den vara slät och plan. Det översta lagret har polerats med hjälp av en två-stegs kemisk mekanisk polerings (CMP) teknik. I det första steget har komersiellt tillgänglig Chemlox använts för att planarisera ytan. I det andra steget har citronsyra (CA) och natrium hypoklorit (NaClO) blandats samman för att bilda ett partikelfritt polermedel. Det andra steget har tagits fram för att ta bort defekter introducerade I det första steget. Ytan är preparerad för att demonstrera att en fotonisk enhet, t.ex. en kvantbrunn kan realiseras I en fotonisk integrerad krets (PIC). En kvantbrunn växtes fram på det polerade CELOG InP/Si provet och mattes med hjälp av atomkraftsmikroskop (AFM), scanning electron mikroskopi (SEM), röntgendiffraktion (XRD) och fotoluminisens (PL). Ytojämnheten förbättrades med hjälp av CMP från 33.2 nm till 12.4 nm. Dock så gav ej kvantbrunnen någon respons I PL-mätningarna.

Place, publisher, year, edition, pages
2015. , 42 p.
TRITA-ICT-EX, 2015:234
Keyword [en]
CELOG, CMP, Chemlox, Citric Acid, Sodium Hypochlorite, InP
Keyword [sv]
CELOG, CMP, Chemlox, Citronsyra, Natrium Hypoklorit, InP
National Category
Nano Technology
URN: urn:nbn:se:kth:diva-187046OAI: diva2:928769
Educational program
Master of Science - Nanotechnology
Available from: 2016-05-16 Created: 2016-05-16 Last updated: 2016-05-16Bibliographically approved

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