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Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode
Holst Centre TNO, Netherlands; Pukyong National University, South Korea.
Holst Centre TNO, Netherlands.
Holst Centre TNO, Netherlands; Eindhoven University of Technology, Netherlands.
Linköping University, Department of Physics, Chemistry and Biology, Complex Materials and Devices. Linköping University, Faculty of Science & Engineering. Eindhoven University of Technology, Netherlands.ORCID iD: 0000-0002-7104-7127
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2016 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 6, no 24407Article in journal (Refereed) Published
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Abstract [en]

We demonstrate multilevel data storage in organic ferroelectric resistive memory diodes consisting of a phase-separated blend of P(VDF-TrFE) and a semiconducting polymer. The dynamic behaviour of the organic ferroelectric memory diode can be described in terms of the inhomogeneous field mechanism (IFM) model where the ferroelectric components are regarded as an assembly of randomly distributed regions with independent polarisation kinetics governed by a time-dependent local field. This allows us to write and non-destructively read stable multilevel polarisation states in the organic memory diode using controlled programming pulses. The resulting 2-bit data storage per memory element doubles the storage density of the organic ferroelectric resistive memory diode without increasing its technological complexity, thus reducing the cost per bit.

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Nature Publishing Group, 2016. Vol. 6, no 24407
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Physical Sciences
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URN: urn:nbn:se:liu:diva-127745DOI: 10.1038/srep24407ISI: 000374166100001PubMedID: 27080264OAI: oai:DiVA.org:liu-127745DiVA: diva2:927512
Note

Funding Agencies|Research Grant of Pukyong National University [CD20151148]

Available from: 2016-05-12 Created: 2016-05-12 Last updated: 2017-11-30

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