Inversion of Spin Signal and Spin Filtering in Ferromagnet vertical bar Hexagonal Boron Nitride-Graphene van der Waals Heterostructures
2016 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 6, 21168Article in journal (Refereed) PublishedText
Two dimensional atomically thin crystals of graphene and its insulating isomorph hexagonal boron nitride (h-BN) are promising materials for spintronic applications. While graphene is an ideal medium for long distance spin transport, h-BN is an insulating tunnel barrier that has potential for efficient spin polarized tunneling from ferromagnets. Here, we demonstrate the spin filtering effect in cobalt vertical bar few layer h-BN vertical bar graphene junctions leading to a large negative spin polarization in graphene at room temperature. Through nonlocal pure spin transport and Hanle precession measurements performed on devices with different interface barrier conditions, we associate the negative spin polarization with high resistance few layer h-BN vertical bar ferromagnet contacts. Detailed bias and gate dependent measurements reinforce the robustness of the effect in our devices. These spintronic effects in two-dimensional van der Waals heterostructures hold promise for future spin based logic and memory applications.
Place, publisher, year, edition, pages
2016. Vol. 6, 21168
IdentifiersURN: urn:nbn:se:uu:diva-281800DOI: 10.1038/srep21168ISI: 000370382200001PubMedID: 26883717OAI: oai:DiVA.org:uu-281800DiVA: diva2:915652
FunderSwedish Research CouncilChalmers Nano‐initiativeEU, FP7, Seventh Framework Programme