Design and characterization of 500°c schmitt trigger in 4H-SiC
2015 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 821-823, 897-901 p.Article in journal (Refereed) PublishedText
Two versions of Schmitt trigger, an emitter-coupled and an operational amplifier (opamp)-based, are implemented in 4H-SiC bipolar technology and tested up to 500 °C. The former benefits the simplicity, smaller footprint, and fewer number of devices, whereas the latter provides better promise for high temperature applications, thanks to its more stable temperature characteristics. In addition, the measurements in the range 25 °C - 500 °C, shows that the opamp-based version provides negative and positive slew rates of 4.8 V/μs and 8.3 V/μs, ~8 and ~3 times higher than that of the emitter-coupled version, which are 1.7 V/μs and 1 V/μs.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2015. Vol. 821-823, 897-901 p.
BJT, High temperature IC, Schmitt trigger, SiC, Analog integrated circuits, Bipolar transistors, Characterization, High temperature applications, Operational amplifiers, Bipolar technology, High temperature, Operational amplifier (opamp), Slew rate, Temperature characteristic, Silicon carbide
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Information and Communication Technology
IdentifiersURN: urn:nbn:se:kth:diva-181560DOI: 10.4028/www.scientific.net/MSF.821-823.897ScopusID: 2-s2.0-84950341514ISBN: 9783038354789OAI: oai:DiVA.org:kth-181560DiVA: diva2:910574
FunderSwedish Foundation for Strategic Research , RE10-0011
QC 201603092016-03-092016-02-022016-07-18Bibliographically approved