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Synthesis and characterization of Zr2Al3C4 thin films
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
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2015 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 595, 142-147 p.Article in journal (Refereed) PublishedText
Abstract [en]

Zr2Al3C4 is an inherently nanolaminated carbide where layers of ZrC alternate with layers of Al3C2. Characterization of bulk samples has shown it has improved damage tolerance and oxidation resistance compared to its binary counterpart ZrC. Though a potential candidate for coatings applied for use in harsh environments, thin films of Zr2Al3C4 have not been reported. We have synthesized epitaxial Zr2Al3C4 thin films by pulsed cathodic arc deposition from three elemental cathodes, and have studied the effect of incident atomic flux ratio, deposition temperature, and choice of substrate on material quality. X-ray diffraction analysis showed that Zr2Al3C4 of the highest structural quality was obtained for growth on 4 H-SiC(001) substrate at 800 degrees C. Also, suppression of competing phases could be achieved on alpha-Al2O3(001) at elevated substrate temperatures. Very similar growth behavior to that of the well-known M(n+1)AX(n) phases - Al supersaturation, binary carbide intergrowth and high sensitivity to choice of substrate - indicates a strong connection between the two families of materials, despite their differences in structure and in chemistry. (C) 2015 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA , 2015. Vol. 595, 142-147 p.
Keyword [en]
Thin film; Cathodic arc deposition; Zr2Al3C4; Nanolaminate; Zirconium carbide
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-123798DOI: 10.1016/j.tsf.2015.10.079ISI: 000365812400024OAI: oai:DiVA.org:liu-123798DiVA: diva2:892925
Note

Funding Agencies|European Research Council under the European Community Seventh Framework Program (FP7)/ERC [258509]; KAW Foundation; Swedish Research Council (VR) [642-2013-8020, 621-2012-4425]; KAW Fellowship program

Available from: 2016-01-11 Created: 2016-01-11 Last updated: 2016-10-31Bibliographically approved
In thesis
1. Thin Film Synthesis of New Nanolaminated Ternary Carbides
Open this publication in new window or tab >>Thin Film Synthesis of New Nanolaminated Ternary Carbides
2016 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Ternary transition metal carbides with inherently nanolaminated crystal structure are a class of materials with typically higher damage tolerance, better machinability and lower brittleness compared to the binary counterparts, yet retaining their satisfactory electrical and thermal conductivity. Their interesting properties can be related to the laminated structure. Though studies of their properties based on calculations and bulk materials have suggested potential thin film applications, such as high temperature hard coatings and electrical contacts, a relatively small number of these phases have been synthesized as thin films.  Investigation of thin film deposition of these inherently nanolaminated materials further the understanding of their phase formation and crystal growth.

Motivated by predicted superconductivity and thermoelectric properties of molybdenum carbides and related layered molybdenum compounds, nanolaminated materials in the Mo-Ga-C ternary system were studied. Apart from the previously reported Mo2GaC, a new layered carbide, Mo2Ga2C, was synthesized in both thin film and bulk form with a postulated crystal structure related to Mo2GaC. The proposed structure was further validated by first principles calculations, showing higher stability compared to other crystal structure as well as other competing phases. The calculated lattice parameters were consistent with values from Rietveld analysis of X-ray and neutron diffraction patterns. In addition, both scanning transmission electron microscopy and X-ray photoelectron spectroscopy showed experimental evidence of the close structural-chemical relation between Mo2Ga2C and Mo2GaC.

Driven by a need of high temperature protective coatings in nuclear applications, Zr-based nanolaminated carbides have become more attractive. In this work, another nanolaminated carbide, Zr2Al3C4, was synthesized in thin film form by pulsed cathodic arc deposition. Formation of the Zr2Al3C4 phase and its competing phases was studied with X-ray diffraction of thin films deposited with varying incoming flux compositions, temperatures and substrate materials. On 4H-SiC(001) substrates, highly phase-pure epitaxial Zr2Al3C4 films were formed, whereas depositions on Al2O3(001) substrates resulted in competing phases. A growth behavior similar to that of nanolaminated Mn+1AXn phases (M is a group 3-7 transition metal; A is commonly a group 13-14 element; X is C or N; n = 1 - 3) was observed, despite the structuraland chemical differences between Zr2Al3C4 and MAX phases.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2016. 41 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1728
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-125289 (URN)10.3384/lic.diva-125289 (DOI)978-91-7685-960-5 (Print) (ISBN)
Presentation
2015-10-02, Jordan/Fermi, J402, Fysikhuset, Campus Valla, Linköping, 10:15 (English)
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Supervisors
Note

The series name Linköping Studies in Science and Technology Licentiate Thesis is incorrect. Correct series name is Linköping Studies in Science and Technology. Thesis.

Available from: 2016-02-19 Created: 2016-02-19 Last updated: 2016-02-24Bibliographically approved

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