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Theoretical study of O- and Zn-face polarity effect on the optical properties of the conventional and staggered ZnO/Zn1-xCdxO/ZnO quantum wells
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
2015 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 594, 323-327 p.Article in journal (Refereed) Published
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Abstract [en]

In this work we present a comparative study of Zn-face and O-face polarity Zn1 - xCdxO-based conventional and staggered quantum-well (QW) structures. The calculation of optical properties of QWs was performed by means of self-consistent Schrodinger-Poisson solver with consideration of polarization-induced effects. The conventional Zn-face and O-face QWs possess similar values of transition energy and an overlap of electron and hole wave functions. A change of the polarity from Zn-face to O-face for the conventional QWs influences only a shape of the conduction and valence band edge profile. It is revealed that the utilization of the staggered QWs leads to an improvement of the confinement characteristics. In addition, the O-face staggered QW structure has larger values of transition energy and overlap integral compared to the Zn-face staggered QW structure. O-terminated staggered QW structure is less dependent on the well thickness and has lower sensitivity to Cd content in embedded Zn1 - xCdxO layer. Control of the material polarity and design of the staggered QWs provide cost-effective approach for engineering the QW band structures with enhanced QW performance. This enables constructing of the Zn1 - xCdxO-based light emission diodes with improved radiative efficiency emitting, applicable for solid state lighting. (C) 2015 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA , 2015. Vol. 594, 323-327 p.
Keyword [en]
Staggered layer; Zinc cadmium oxide; Ternary alloy; Quantum well; Transition energy
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Chemical Sciences
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URN: urn:nbn:se:liu:diva-123525DOI: 10.1016/j.tsf.2015.02.001ISI: 000365046800021OAI: oai:DiVA.org:liu-123525DiVA: diva2:886262
Note

Funding Agencies|Linkoping Linnaeus Initiative for Novel Functional Materials (LiLi-NFM); Angpannforeningens Forskningsstiftelse [14-517]

Available from: 2015-12-22 Created: 2015-12-21 Last updated: 2017-12-01Bibliographically approved

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Shtepliuk, IvanKhranovskyy, VolodymyrYakimova, Rositsa
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