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Silicon Oxynitride Thin Films Grown by Reactive HiPIMS
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
2015 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Amorphous silicon oxynitride (SiOxNy) thin films were grown by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N2O plasmas. The elemental composition of the films was shown to depend on the target surface conditions during the film deposition, as well as on the reactive gas flow rate. When the target was sputtered under poisoned surface conditions, the film composition was predominantly silicon oxide, whereas films deposited in the transition regime between poisoned and metallic target surface conditions showed higher nitrogen concentrations, as measured by X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). The different target surface conditions were identified based on the evolution of the target current waveforms upon variation of the deposition parameters. The average electron temperatures during the peak target current were determined by Langmuir probe measurements, to assist with the explanation of the observed target current behavior and target poisoning characteristics.

The chemical composition of the films was shown to range from silicon-rich to effectively stoichiometric silicon oxynitrides, where no Si–Si contributions were found in the XPS Si 2p core level spectra. The film optical properties, the refractive index n and the extinction coefficient k, were shown to depend on the film chemical bonding, with the effectively stoichiometric films displaying optical properties falling between those of SiO2 and Si3N4.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2015. , 30 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1737
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-123383DOI: 10.3384/lic.diva-123383ISBN: 978-91-7685-879-0 (print)OAI: oai:DiVA.org:liu-123383DiVA: diva2:882488
Presentation
2016-01-22, Jordan-Fermi, J402, Fysikhuset, Campus Valla, Linköping, 09:15 (English)
Opponent
Supervisors
Funder
EU, FP7, Seventh Framework Programme, FP7/2007-2013Swedish Foundation for Strategic Research , SFO-Mat-LiU No. 2009-00971
Available from: 2015-12-15 Created: 2015-12-15 Last updated: 2016-08-31Bibliographically approved
List of papers
1. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor
Open this publication in new window or tab >>Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor
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2015 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 33, no 5, 05E121- p.Article in journal (Refereed) Published
Abstract [en]

Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Place, publisher, year, edition, pages
A V S AMER INST PHYSICS, 2015
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-121906 (URN)10.1116/1.4927493 (DOI)000361229000021 ()
Note

Funding Agencies|European Union [GA-310477]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]

Available from: 2015-10-13 Created: 2015-10-12 Last updated: 2017-12-01
2. Stoichiometric silicon oxynitride thin films reactively sputtered in Ar/N2O plasmas by HiPIMS
Open this publication in new window or tab >>Stoichiometric silicon oxynitride thin films reactively sputtered in Ar/N2O plasmas by HiPIMS
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2016 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 49, no 13, 135309Article in journal (Refereed) Published
Abstract [en]

Silicon oxynitride (SiOxNy, x = 0.2 − 1.3, y = 0.2 − 0.7) thin films were synthesized by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N2O atmospheres. It is found that the composition of the material can be controlled by the reactive gas flow and the average target power. X-ray photoelectron spectroscopy (XPS) shows that high average powers result in more silicon-rich films, while lower target powers yield silicon-oxide-like material due to more pronounced target poisoning. The amount of nitrogen in the films can be controlled by the percentage of nitrous oxide in the working gas. The nitrogen content remains at a constant level while the target is operated in the transition region between metallic and poisoned target surface conditions. The extent of target poisoning is gauged by the changes in peak target current under the different deposition conditions. XPS also shows that varying concentrations and ratios of oxygen and nitrogen in the films result in film chemical bonding structures ranging from silicon-rich to stoichiometric silicon oxynitrides having no observable Si−Si bond contributions. Spectroscopic ellipsometry shows that the film optical properties depend on the amount and ratio of oxygen and nitrogen in the compound, with film refractive indices measured at 633 nm ranging between those of SiO2 and Si3N4.

Place, publisher, year, edition, pages
Institute of Physics (IOP), 2016
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-123382 (URN)10.1088/0022-3727/49/13/135309 (DOI)000371908800023 ()
Note

Funding agencies:  Carl Tryggers Foundation for Scientific Research; European Union under the LifeLongJoints Project [GA-310477]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]

Available from: 2015-12-15 Created: 2015-12-15 Last updated: 2017-12-01Bibliographically approved

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