CZTS solar cell device simulation with varying absorber thickness
2015 (English)In: 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC). Proceedings, IEEE conference proceedings, 2015Conference paper (Refereed)
In this study the influence of absorber layer thickness on the trends of the four current-voltage (J-V) parameters for our CZTS solar cells is studied with simulations and compared with empirical data. In the case of dominating interface recombination we find that open-circuit voltage and fill-factor are largely unaffected of thickness variations 0.5 – 2.0 μm, whereas short-circuit current, and thereby efficiency, saturates (98 % of max) at >1.1 μm absorber thickness, in agreement with measurements. In the case of suppressed interface recombination all four J-V parameters exhibit strong thickness dependence at <0.5 μm due to back contact recombination.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2015.
, IEEE Photovoltaic Specialists Conference, ISSN 0160-8371
absorber layer, CZTS, device model, photovoltaic cells, simulations
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:uu:diva-268931DOI: 10.1109/PVSC.2015.7355794ISI: 000369992900204ISBN: 978-1-4799-7944-8OAI: oai:DiVA.org:uu-268931DiVA: diva2:881710
IEEE 42nd Photovoltaic Specialists Conference, 14-19 June 2015, New Orleans, LA, USA