Modeling Temperature Dependence of fT in 4H-SiC Bipolar Transistors
2015 (English)Conference paper (Other academic)
This paper models the temperature dependence of fT in 4H-SiC bipolar devices. The proposed model describes variation of the constituent parameters of fT as a function of temperature. The model assumes complete ionization of dopants in 4H-SiC. However, this assumption hampers the model’s utilityat temperatures below 300◦C. The model was simulated attemperatures between 300◦C and 700◦C and a drop in fT wasobserved. However, measurements are required to prove thecorrectness of the model or lack thereof.
Place, publisher, year, edition, pages
Linköping University Electronic Press, 2015.
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-177520OAI: oai:DiVA.org:kth-177520DiVA: diva2:877898
Swedish System on Chip Conference (SSoCC), Gothenburg, May 4-5, 2015
QC 201603182015-12-082015-11-232016-03-18Bibliographically approved