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Graphene growth on SiC under Arambient and H-intercalation
KTH, School of Electrical Engineering (EES), Space and Plasma Physics.
2015 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

We grow epitaxial graphene on 6H-SiC (0001) substrates in Ar background and intercalatehydrogen to reform the carbon bu↵er layer into single and multilayered graphene. We willanalyze the graphene using a combination of techniques including optical microscopy,micro-Raman spectroscopy, Atomic Force Microscopy (AFM), and reflectance mappingand contactless measurements of sheet carrier density and charge carrier mobility. We havestudied in detail, the influence of growth parameters and in-situ surface preparation ofsubstrate on the thickness uniformity and surface morphology of graphene. Additionally,as-grown graphene layers were intercalated with H to obtain quasi-free standing layers ofgraphene with enhanced charge carrier mobility.

Place, publisher, year, edition, pages
2015. , 49 p.
Series
EES Examensarbete / Master Thesis, TRITA-EE 2015:105
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-177645OAI: oai:DiVA.org:kth-177645DiVA: diva2:873936
Examiners
Available from: 2015-11-25 Created: 2015-11-25 Last updated: 2015-11-25Bibliographically approved

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  • apa
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