Gas phase chemical vapor deposition chemistry of triethylboron probed by boron-carbon thin film deposition and quantum chemical calculations
2015 (English)In: Journal of Materials Chemistry C, ISSN 2050-7526, Vol. 3, no 41, 10898-10906 p.Article in journal (Refereed) Published
We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of BxC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations. A comprehensive thermochemical catalogue for the species of the gas phase chemistry of TEB is examined and found to be dominated by beta-hydride eliminations of C2H4 to yield BH3. A complementary bimolecular reaction path based on H-2 assisted C2H6 elimination to BH3 is also significant at lower temperatures in the presence of hydrogen. Furthermore, we find a temperature window of 600-1000 degrees C for the deposition of X-ray amorphous BxC films with 2.5 less than= x less than= 4.5 from TEB. Films grown at temperatures below 600 degrees C contain high amounts of H, while temperatures above 1000 degrees C result in C-rich films. The film density and hardness are determined to be in the range of 2.40-2.65 g cm(-3) and 29-39 GPa, respectively, within the determined temperature window.
Place, publisher, year, edition, pages
ROYAL SOC CHEMISTRY , 2015. Vol. 3, no 41, 10898-10906 p.
Physical Sciences Chemical Sciences
IdentifiersURN: urn:nbn:se:liu:diva-122673DOI: 10.1039/c5tc02293bISI: 000363252200030OAI: oai:DiVA.org:liu-122673DiVA: diva2:871688
Funding Agencies|European Spallation Source ESS AB; Knut and Alice Wallenberg Foundation; German Science Foundation (Research Training Group 1782); Beilstein Foundation (Frankfurt/Germany)2015-11-162015-11-132016-08-31