Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs
2015 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 36, no 10, 1069-1072 p.Article in journal (Refereed) Published
Three 4H-SiC bipolar junction transistor designs with different emitter cell geometries (linear interdigitated fingers, square cell geometry, and hexagon cell geometry) are fabricated, analyzed, and compared with respect to current gain, ON-resistance (R-ON), current density (J(C)), and temperature performance for the first time. Emitter size effect and surface recombination are investigated. Due to a better utilization of the base area, optimal emitter cell geometry significantly increases the current density about 42% and reduces the ON-resistance about 21% at a given current gain, thus making the device more efficient for high-power and high-temperature applications.
Place, publisher, year, edition, pages
[Salemi, Arash; Elahipanah, Hossein; Zetterling, Carl-Mikael; Ostling, Mikael] KTH Royal Inst Technol, Sch Informat & Commun Technol, SE-16440 Kista, Sweden., 2015. Vol. 36, no 10, 1069-1072 p.
Power 4H-SiC BJTs, current density, current gain, ON-resistance, surface recombination
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-176349DOI: 10.1109/LED.2015.2470558ISI: 000362288700025OAI: oai:DiVA.org:kth-176349DiVA: diva2:867880
FunderSwedish Energy Agency
QC 201511062015-11-062015-11-032016-04-25Bibliographically approved