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Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-2837-3656
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2015 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 33, no 5, 05E121- p.Article in journal (Refereed) Published
Abstract [en]

Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

Place, publisher, year, edition, pages
A V S AMER INST PHYSICS , 2015. Vol. 33, no 5, 05E121- p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-121906DOI: 10.1116/1.4927493ISI: 000361229000021OAI: oai:DiVA.org:liu-121906DiVA: diva2:860740
Note

Funding Agencies|European Union [GA-310477]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009-00971]

Available from: 2015-10-13 Created: 2015-10-12 Last updated: 2017-12-01
In thesis
1. Silicon Oxynitride Thin Films Grown by Reactive HiPIMS
Open this publication in new window or tab >>Silicon Oxynitride Thin Films Grown by Reactive HiPIMS
2015 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Amorphous silicon oxynitride (SiOxNy) thin films were grown by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N2O plasmas. The elemental composition of the films was shown to depend on the target surface conditions during the film deposition, as well as on the reactive gas flow rate. When the target was sputtered under poisoned surface conditions, the film composition was predominantly silicon oxide, whereas films deposited in the transition regime between poisoned and metallic target surface conditions showed higher nitrogen concentrations, as measured by X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). The different target surface conditions were identified based on the evolution of the target current waveforms upon variation of the deposition parameters. The average electron temperatures during the peak target current were determined by Langmuir probe measurements, to assist with the explanation of the observed target current behavior and target poisoning characteristics.

The chemical composition of the films was shown to range from silicon-rich to effectively stoichiometric silicon oxynitrides, where no Si–Si contributions were found in the XPS Si 2p core level spectra. The film optical properties, the refractive index n and the extinction coefficient k, were shown to depend on the film chemical bonding, with the effectively stoichiometric films displaying optical properties falling between those of SiO2 and Si3N4.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2015. 30 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1737
National Category
Physical Sciences
Identifiers
urn:nbn:se:liu:diva-123383 (URN)10.3384/lic.diva-123383 (DOI)978-91-7685-879-0 (ISBN)
Presentation
2016-01-22, Jordan-Fermi, J402, Fysikhuset, Campus Valla, Linköping, 09:15 (English)
Opponent
Supervisors
Funder
EU, FP7, Seventh Framework Programme, FP7/2007-2013Swedish Foundation for Strategic Research , SFO-Mat-LiU No. 2009-00971
Available from: 2015-12-15 Created: 2015-12-15 Last updated: 2016-08-31Bibliographically approved

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Hänninen, TuomasSchmidt, SusannJensen, JensHultman, LarsHögberg, Hans
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