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Real-Time Study of CVD Growth of Silicon Oxide on Rutile TiO2(110) Using Tetraethyl Orthosilicate
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory.
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2015 (English)In: The Journal of Physical Chemistry C, ISSN 1932-7447, E-ISSN 1932-7455, Vol. 119, no 33, 19149-19161 p.Article in journal (Refereed) Published
Abstract [en]

The interaction of the ruffle TiO2(110) surface with tetraethyl orthosilicate (TEOS) in the pressure range from UHV to 1 mbar as well as the TEOS-based chemical vapor deposition of SiO2 on the TiO2(110) surface were monitored in real time using near-ambient pressure X-ray photoelectron spectroscopy. The experimental data and density functional theory calculations confirm the dissociative adsorption of TEOS on the surface already at room temperature. At elevated pressure, the ethoxy species formed in the adsorption process undergoes further surface reactions toward a carboxyl species not observed in the absence of a TEOS gas phase reservoir. Annealing of the adsorption layer leads to the formation of SiO2, and an intermediate oxygen species assigned to a mixed titanium/silicon oxide is identified. Atomic force microscopy confirms the morphological changes after silicon oxide formation.

Place, publisher, year, edition, pages
2015. Vol. 119, no 33, 19149-19161 p.
National Category
Physical Sciences
URN: urn:nbn:se:uu:diva-262424DOI: 10.1021/acs.jpcc.5b04985ISI: 000360026200035OAI: diva2:854682
Swedish Research Council, 2010-5080 2014-3776
Available from: 2015-09-17 Created: 2015-09-15 Last updated: 2015-09-17Bibliographically approved

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Sanchez-de-Armas, RocioBrena, Barbara
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