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High Power Combiner/Divider Design for Dual Band RF Power Amplifiers
Indiana University Purdue University Fort Wayne, Fort Wayne, USA.
KTH, School of Electrical Engineering (EES), Signal Processing. KTH, School of Electrical Engineering (EES), Centres, ACCESS Linnaeus Centre.ORCID iD: 0000-0003-1183-6666
Högskolan i Gävle.
Indiana University Purdue University Fort Wayne, Fort Wayne, USA.
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2015 (English)In: IEEE International Conference on Electromagnetics in Advanced Applications, IEEE conference proceedings, 2015, 1036-1039 p.Conference paper, Published paper (Refereed)
Abstract [en]

Design of low loss with an enhanced thermal profile power divider/combiner for high power dual-band Radio Frequency (RF) power amplifier applications is given. The practical implementation, low loss and substrate characteristics make this type of combiner ideal for high power microwave applications.  The combiner operational frequencies are chosen to operate at 900 MHz and 2.14 GHz, which are common frequencies for concurrent dual band RF power amplifiers. The analytical results are verified with simulation results for various cases and agreement has been observed on all of them. 

Place, publisher, year, edition, pages
IEEE conference proceedings, 2015. 1036-1039 p.
National Category
Telecommunications
Identifiers
URN: urn:nbn:se:kth:diva-173368DOI: 10.1109/ICEAA.2015.7297272ISI: 000378428800197Scopus ID: 2-s2.0-84955502943OAI: oai:DiVA.org:kth-173368DiVA: diva2:852841
Conference
IEEE International Conference on Electromagnetics in Advanced Applications,7-11 Sept. 2015, Turin
Note

Qc 20151211

Available from: 2015-09-10 Created: 2015-09-10 Last updated: 2016-08-09Bibliographically approved

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fulltext(533 kB)79 downloads
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CiteExportLink to record
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