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Magnetoresistance of doped silicon
University of Federal Bahia, Brazil.
University of Sao Paulo, Brazil.
University of Sao Paulo, Brazil.
University of Federal Rio Grande do Sul, Brazil.
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2015 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 91, no 21, 214414- p.Article in journal (Refereed) Published
Abstract [en]

We have performed longitudinal magnetoresistance measurements on heavily n-doped silicon for donor concentrations exceeding the critical value for the metal-nonmetal transition. The results are compared to those from a many-body theory where the donor electrons are assumed to reside at the bottom of the many-valley conduction band of the host. Good qualitative agreement between theory and experiment is obtained.

Place, publisher, year, edition, pages
American Physical Society , 2015. Vol. 91, no 21, 214414- p.
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Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-119788DOI: 10.1103/PhysRevB.91.214414ISI: 000355825000002OAI: oai:DiVA.org:liu-119788DiVA: diva2:827274
Note

Funding Agencies|National Research Council of Scientific and Technological Development (CNPq); Bahia Research Foundation (FAPESB)/PRONEX; Sao Paulo Research Foundation (FAPESP)

Available from: 2015-06-26 Created: 2015-06-26 Last updated: 2017-12-04

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