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Simulation of how pressure influences the reactive sputtering process
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
2015 (English)Independent thesis Advanced level (professional degree), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

Sputtering is a physical vapor deposition (PVD) process used to create thin films, i.e very thin layers of material. To form compounds, such as oxides and nitrides, it may be beneficial to add a reactive gas to the process which is known as reactive sputtering. This thesis focuses on the simulation of the reactive sputtering process and, more specifically, the effect of the process pressure.

Two models have been developed. A Monte Carlo model simulates the distribution of sputtered material throughout the chamber. It is based on the binary collision model with initial conditions acquired from simulations in TRIM. The hard-sphere potential is used as interaction potential in the scattering calculations. The effect of the process pressure is studied for two different elements, sulfur and tungsten. It is found that the distribution of material is heavily influenced by the pressure. A high pressure gives a more diffusion-like distribution compared to a low pressure. As the pressure is increased the deposited material’s energy distribution is found to be shifted towards lower energies until it reaches the energy of thermalized atoms.

The second model developed is an extended Berg model that incorporates the effect of redeposition of sputtered material on the target, implantation of reactive ions in the target and preferential sputtering. Using simulations the effect of these extensions is discussed. It is found that an increased pressure may eliminate the hysteresis region which has been observed experimentally. Finally an outline is presented on how the two models can be unified into a Berg-model that takes the non-uniform distribution of sputtered material into account.

Place, publisher, year, edition, pages
2015. , 39 p.
UPTEC F, ISSN 1401-5757 ; 15035
Keyword [en]
thin film, sputtering, reactive sputtering, simulation, pressure, hysteresis
National Category
Other Materials Engineering
URN: urn:nbn:se:uu:diva-256617OAI: diva2:826132
Educational program
Master Programme in Engineering Physics
Available from: 2015-06-25 Created: 2015-06-24 Last updated: 2015-06-25Bibliographically approved

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