Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates
2015 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 15, no 6, 2940-2947 p.Article in journal (Refereed) Published
We investigated the formation of structural defects in thick (∼1 mm) cubic silicon carbide (3C-SiC) layers grown on off-oriented 4H-SiC substrates via a lateral enlargement mechanism using different growth conditions. A two-step growth process based on this technique was developed, which provides a trade-off between the growth rate and the number of defects in the 3C-SiC layers. Moreover, we demonstrated that the two-step growth process combined with a geometrically controlled lateral enlargement mechanism allows the formation of a single 3C-SiC domain which enlarges and completely covers the substrate surface. High crystalline quality of the grown 3C-SiC layers is confirmed using high resolution X-ray diffraction and low temperature photoluminescence measurements.
Place, publisher, year, edition, pages
American Chemical Society (ACS), 2015. Vol. 15, no 6, 2940-2947 p.
IdentifiersURN: urn:nbn:se:liu:diva-118525DOI: 10.1021/acs.cgd.5b00368ISI: 000355890400051OAI: oai:DiVA.org:liu-118525DiVA: diva2:815338
Swedish Energy Agency; Swedish Research Council; Swedish Governmental Agency for Innovation Systems (Vinnova)2015-05-292015-05-292016-05-13