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Wafer-scale homogeneity of transport properties in epitaxial graphene on SiC
Chalmers, Sweden.
Chalmers, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Chalmers, Sweden.
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2015 (English)In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 87, 409-414 p.Article in journal (Refereed) Published
Abstract [en]

Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on silicon carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer-size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content. The spread in properties among devices patterned on the same SiC/G wafer can thus be understood by considering the inhomogeneous number of layers often grown on the surface of epitaxial graphene on SiC. (C) 2015 Elsevier Ltd. All rights reserved.

Place, publisher, year, edition, pages
Elsevier , 2015. Vol. 87, 409-414 p.
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Chemical Sciences
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URN: urn:nbn:se:liu:diva-117779DOI: 10.1016/j.carbon.2015.02.058ISI: 000352332900042OAI: oai:DiVA.org:liu-117779DiVA: diva2:811295
Note

Funding Agencies|Graphene Flagship [CNECT-ICT-604391]; Swedish Foundation for Strategic Research (SSF); Linnaeus Centre for Quantum Engineering; Knut and Allice Wallenberg Foundation; Chalmers AoA Nano; EMRP project GraphOhm; EMRP within EURAMET; European Union

Available from: 2015-05-11 Created: 2015-05-08 Last updated: 2017-12-04

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