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Size confinement effect in graphene grown on 6H-SiC (0001) substrate
Ioffe Institute, Russia.
Ioffe Institute, Russia.
Ioffe Institute, Russia; University of ITMO, Russia.
Ioffe Institute, Russia; University of ITMO, Russia.
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2015 (English)In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 86, 139-145 p.Article in journal (Refereed) Published
Abstract [en]

We have observed the energy structure in the density of occupied states of graphene grown on n-type 6H-SiC (0001). The structure revealed with photoelectron spectroscopy is described by creation of the quantum well states whose number and the energy position (E-1 = 0.3 eV, E-2 = 1.2 eV, E-3 = 2.6 eV) coincide with the calculated ones for deep (V = 2.9 eV) and narrow (d = 2.15 angstrom) quantum well formed by potential relief of the valence bands in the structure graphene/n-SiC. We believe that the quantum well states should be formed also in graphene on dielectric and in suspended graphene. (C) 2015 Elsevier Ltd. All rights reserved.

Place, publisher, year, edition, pages
Elsevier , 2015. Vol. 86, 139-145 p.
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Chemical Sciences
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URN: urn:nbn:se:liu:diva-117782DOI: 10.1016/j.carbon.2015.01.015ISI: 000352922700017OAI: oai:DiVA.org:liu-117782DiVA: diva2:811291
Note

Funding Agencies|Government of the Russian Federation [074-U01]; Graphene Flagship [CNECT-ICT-604391]

Available from: 2015-05-11 Created: 2015-05-08 Last updated: 2017-12-04

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