Size dependence of electron spin dephasing in InGaAs quantum dots
2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 9, 093109- p.Article in journal (Refereed) Published
We investigate ensemble electron spin dephasing in self-assembled InGaAs/GaAs quantum dots (QDs) of different lateral sizes by employing optical Hanle measurements. Using low excitation power, we are able to obtain a spin dephasing time T-2* (in the order of ns) of the resident electron after recombination of negative trions in the QDs. We show that T-2* is determined by the hyperfine field arising from the frozen fluctuation of nuclear spins, which scales with the size of QDs following the Merkulov-Efros-Rosen model. This scaling no longer holds in large QDs, most likely due to a breakdown in the lateral electron confinement. (C) 2015 AIP Publishing LLC.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2015. Vol. 106, no 9, 093109- p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-117236DOI: 10.1063/1.4914084ISI: 000351069900054OAI: oai:DiVA.org:liu-117236DiVA: diva2:807096
Funding Agencies|Linkoping University through the Professor Contracts; Swedish Research Council [621-2011-4254, 2008-6582]; Japan Society for Promotion of Science 2015-04-222015-04-212015-05-28