5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension
2015 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 36, no 2, 168-170 p.Article in journal (Refereed) Published
Implantation-free 4H-SiC bipolar junction transistors with multiple-shallow-trench junction termination extension have been fabricated. The maximum current gain of 40 at a current density of 370 A/cm(2) is obtained for the device with an active area of 0.065 mm(2). A maximum open-base breakdown voltage (BV) of 5.85 kV is measured, which is 93% of the theoretical BV. A specific ON-resistance (R-ON) of 28 m Omega.cm(2) was obtained.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2015. Vol. 36, no 2, 168-170 p.
4H-SiC, multiple-shallow-trench JTE, implantation-free, high-voltage BJT
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-163477DOI: 10.1109/LED.2014.2386317ISI: 000350334100028ScopusID: 2-s2.0-84921892943OAI: oai:DiVA.org:kth-163477DiVA: diva2:800676
FunderSwedish Foundation for Strategic Research Swedish Energy Agency
QC 201504072015-04-072015-04-072016-05-23Bibliographically approved