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High mobility epitaxial graphene devices via aqueous-ozone processing
Chalmers, Sweden.
Uppsala University, Sweden.
Uppsala University, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 6, 063503- p.Article in journal (Refereed) Published
Abstract [en]

We find that monolayer epitaxial graphene devices exposed to aggressive aqueous-ozone processing and annealing became cleaner from post-fabrication organic resist residuals and, significantly, maintain their high carrier mobility. Additionally, we observe a decrease in carrier density from inherent strong n-type doping to extremely low p-type doping after processing. This transition is explained to be a consequence of the cleaning effect of aqueous-ozone processing and annealing, since the observed removal of resist residuals from SiC/G enables the exposure of the bare graphene to dopants present in ambient conditions. The resulting combination of charge neutrality, high mobility, large area clean surfaces, and susceptibility to environmental species suggest this processed graphene system as an ideal candidate for gas sensing applications.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2015. Vol. 106, no 6, 063503- p.
National Category
Chemical Sciences
URN: urn:nbn:se:liu:diva-116522DOI: 10.1063/1.4907947ISI: 000349845300075OAI: diva2:798868

Funding Agencies|Uppsala University Quality and Renewal program for graphene; Graphene Flagship [CNECT-ICT-604391]; Swedish Foundation for Strategic Research (SSF); Linnaeus Centre for Quantum Engineering; Knut and Alice Wallenberg Foundation; Chalmers AoA Nano; EMRP project GraphOhm; EMRP within EURAMET; European Union

Available from: 2015-03-27 Created: 2015-03-27 Last updated: 2015-03-31

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Yakimova, Rositsa
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