Improved Low-frequency Noise for 0.3nm EOT Thulium Silicate Interfacial Layer
2014 (English)In: Solid State Device Research Conference (ESSDERC), 2014 44th European, IEEE conference proceedings, 2014, 361-364 p.Conference paper (Refereed)
Low-frequency noise (LFN) of gate stacks with Tm2O3 high-k dielectric and thulium silicate (TmSiO) interfacial layer (IL) is investigated. The measured 1/f noise is compared to SiOx/HfO2 stacks with comparable IL thickness. Integration of a high-k thulium silicate IL provides a scaled EOT of 0.3nm with good mobility and interface quality, hence excellent LFN is obtained. The LFN noise for devices with TmSiO/Tm2O3 gate dielectric is reduced for nMOSFETs and comparable for pMOSFETs compared to SiOx/HfO2 devices.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2014. 361-364 p.
Low-frequency noise, high-k dielectric, interfacial layer, Thulium silicate, MOSFET
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-162025DOI: 10.1109/ESSDERC.2014.6948835ISI: 000348858100087ScopusID: 2-s2.0-84911982170ISBN: 978-1-4799-4376-0OAI: oai:DiVA.org:kth-162025DiVA: diva2:798115
44th European Solid-State Device Research Conference (ESSDERC), SEP 22-26, 2014, ITALY
FunderEU, European Research Council, 228229
QC 201503262015-03-262015-03-202015-11-30Bibliographically approved