Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers
2015 (English)In: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 27, no 7, 721-724 p.Article in journal, Letter (Refereed) Published
We report on the optimization of pnp-type verticalcavity surface-emitting transistor-lasers based on the fusion between an AlGaAs/GaAs heterojunction bipolar transistor and an InGaAs/GaAs VCSEL using an epitaxial regrowth process. It is shown how a proper design of the base region can extend the transistor active range of operation well beyond lasing threshold, thereby resulting in typical transistor laser operational characteristics including mW-range output power, mA-range base threshold current, record-low power dissipation under laser operation, and continuous-wave operation up to at least 60°C. A pronounced breakdown in the collector current characteristics in the limit of high base current and/or emitter-collector voltage accompanied by a quenching of the optical output power is interpreted as being related to quantum well band-filling.
Place, publisher, year, edition, pages
IEEE Press, 2015. Vol. 27, no 7, 721-724 p.
Semiconductor lasers, surface emitting lasers, transistor lasers
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Physics
IdentifiersURN: urn:nbn:se:kth:diva-161188DOI: 10.1109/LPT.2015.2390298ISI: 000350877700010ScopusID: 2-s2.0-84924873281OAI: oai:DiVA.org:kth-161188DiVA: diva2:793935
FunderSwedish Research Council, 2010-4386
QC 201503122015-03-092015-03-092015-04-13Bibliographically approved