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Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2837-3656
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2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 116, no 22, 223503- p.Article in journal (Refereed) Published
Abstract [en]

Freestanding bulk C-doped GaN wafers grown by halide vapor phase epitaxy are studied by optical spectroscopy and electron microscopy. Significant changes of the near band gap (NBG) emission as well as an enhancement of yellow luminescence have been found with increasing C doping from 5 × 1016 cm−3 to 6 × 1017 cm−3. Cathodoluminescence mapping reveals hexagonal domain structures (pits) with high oxygen concentrations formed during the growth. NBG emission within the pits even at high C concentration is dominated by a rather broad line at ∼3.47 eV typical for n-type GaN. In the area without pits, quenching of the donor bound exciton (DBE) spectrum at moderate C doping levels of 1–2 × 1017 cm−3 is observed along with the appearance of two acceptor bound exciton lines typical for Mg-doped GaN. The DBE ionization due to local electric fields in compensated GaN may explain the transformation of the NBG emission.

Place, publisher, year, edition, pages
2014. Vol. 116, no 22, 223503- p.
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Chemical Sciences Physical Sciences
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URN: urn:nbn:se:liu:diva-113340DOI: 10.1063/1.4903819ISI: 000346266300018OAI: oai:DiVA.org:liu-113340DiVA: diva2:781362
Available from: 2015-01-16 Created: 2015-01-16 Last updated: 2017-12-05

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