Catalytic metal-gate field effect transistors based on SiC for indoor air quality control
2015 (English)In: Journal of Sensors and Sensor Systems, ISSN 2194-8771, Vol. 4, 1-8 p.Article in journal (Refereed) Published
High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoorair quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330° C and at different levels of relative humidity up to 60 %, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.
Place, publisher, year, edition, pages
Germany: Copernicus , 2015. Vol. 4, 1-8 p.
silicon carbide, field effect transistor, volatile organic compounds, air quality control
Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:liu:diva-113295DOI: 10.5194/jsss-4-1-2015OAI: oai:DiVA.org:liu-113295DiVA: diva2:780816
E-MRS Spring Meeting 2014 Symposium B: Advanced Functional Materials for Environmental Monitoring and ApplicationsLille Congress Center, Lille (France), 26-29 May 2014
ProjectsSENSIndoor (grant agreement no. 604311)
FunderEU, FP7, Seventh Framework Programme, 604311