Raman spectroscopy of GaP/GaNP core/shell nanowires
2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 19, 193102- p.Article in journal (Refereed) Published
Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm(-1) that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2014. Vol. 105, no 19, 193102- p.
IdentifiersURN: urn:nbn:se:liu:diva-113015DOI: 10.1063/1.4901446ISI: 000345216100062OAI: oai:DiVA.org:liu-113015DiVA: diva2:778970
Funding Agencies|Vetenskapsradet (Swedish Research Council) [621-2010-3815]; U.S. National Science Foundation [DMR-0907652, DMR-1106369]; Royal Government of Thailand Scholarship2015-01-122015-01-082015-01-13