Structural study of disordered SiC nanowires by three-dimensional rotation electron diffraction
2014 (English)In: Materials Research Express, ISSN 2053-1591, Vol. 1, no 4, 045023- p.Article in journal (Refereed) Published
The structure of disordered SiC nanowires was studied by using the three-dimensional rotation electron diffraction (RED) technique. The streaks shown in the RED images indicated the stacking faults of the nanowire. High-resolution transmission electron microscopy imaging was employed to support the results from the RED data. It suggested that a 2H polytype is most possible for the nanowires.
Place, publisher, year, edition, pages
2014. Vol. 1, no 4, 045023- p.
Ceramics Nano Technology
IdentifiersURN: urn:nbn:se:su:diva-109838DOI: 10.1088/2053-1591/1/4/045023OAI: oai:DiVA.org:su-109838DiVA: diva2:767415