Effects of 3-MeV Protons on 4H-SiC Bipolar Devices and Integrated OR-NOR Gates
2014 (English)In: IEEE Transactions on Nuclear Science, ISSN 0018-9499, E-ISSN 1558-1578, Vol. 61, no 4, 1772-1776 p.Article in journal (Refereed) Published
Radiation effects of 3-MeV protons on 4H-SiC bipolar devices and integrated OR-NOR gates have been investigated. The chips were irradiated from a fluence of 1 x 10(8) cm(-2) until 1 x 10(13) cm(-2). Up until a fluence of 1 x 10(11) cm-2, both the bipolar devices and the logic gates were found to be stable, but for higher fluence, they begin to degrade as a function of irradiation fluence. Using TCAD simulations, degradation of the transistor current gain has been found to be more dominated by surface states than bulk defects generated by the proton irradiation. Simulations of logic circuits using SPICE show that the gain degradation is the key contribution to the unstable performance of the circuits from the fluence of 1 x 10(12) cm(-2) and above.
Place, publisher, year, edition, pages
2014. Vol. 61, no 4, 1772-1776 p.
4H-SiC, bipolar integrated circuits, emitter couple logic (ECL), OR-NOR gates, proton radiation
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-156460DOI: 10.1109/TNS.2014.2310293ISI: 000343928100038ScopusID: 2-s2.0-84906780937OAI: oai:DiVA.org:kth-156460DiVA: diva2:767390
European Conference on Radiation and its Effects on Components and Systems (RADECS), SEP 23-27, 2013, Oxford, ENGLAND
FunderSwedish Foundation for Strategic Research
QC 201412012014-12-012014-11-282016-04-27Bibliographically approved