Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates
2014 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 14, no 12, 6514-6520 p.Article in journal (Refereed) Published
We introduce a 3C-SiC growth concept on off-oriented 4H-SiC substrates using a sublimation epitaxial method. A growth model of 3C-SiC layer development via a controlled cubic polytype nucleation on in situ formed on-axis area followed by a lateral enlargement of 3C-SiC domains along the step-flow direction is outlined. Growth process stability and reproducibility of high crystalline quality material are demonstrated in a series of 3C-SiC samples with a thickness of about 1 mm. The average values of full width at half-maximum of ω rocking curves on these samples vary from 34 to 48 arcsec indicating high crystalline quality compared to values found in the literature. The low temperature photoluminescence measurements also confirm a high crystalline quality of 3C-SiC and indicate that the residual nitrogen concentration is about 1–2 × 1016 cm–3. Such a 3C-SiC growth concept may be applied to produce substrates for homoepitaxial 3C-SiC growth or seeds which could be explored in bulk growth of 3C-SiC.
Place, publisher, year, edition, pages
American Chemical Society (ACS), 2014. Vol. 14, no 12, 6514-6520 p.
Physical Sciences Chemical Sciences
IdentifiersURN: urn:nbn:se:liu:diva-112510DOI: 10.1021/cg501424eISI: 000345884000043OAI: oai:DiVA.org:liu-112510DiVA: diva2:767079