Stable and metastable Si negative-U centers in AlGaN and AlN
2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 16, 162106-1-162106-4 p.Article in journal (Refereed) Published
Electron paramagnetic resonance studies of Si-doped AlxGa1−xN (0.79 ≤ x ≤ 1.0) reveal two Si negative-U (or DX) centers, which can be separately observed for x ≥ 0.84. We found that for the stable DX center, the energy |EDX| of the negatively charged state DX−, which is also considered as the donor activation energy, abruptly increases with Al content for x ∼ 0.83–1.0 approaching ∼240 meV in AlN, whereas EDX remains to be close to the neutral charge state Ed for the metastable DX center (∼11 meV below Ed in AlN).
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2014. Vol. 105, no 16, 162106-1-162106-4 p.
IdentifiersURN: urn:nbn:se:liu:diva-112407DOI: 10.1063/1.4900409ISI: 000344363000034OAI: oai:DiVA.org:liu-112407DiVA: diva2:765990