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Digitally Controlled Current Source Amplifiers for Power Converter Gate Drive Units
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
2013 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

Within this project, performance differences of 3.3 kV / 1500 A IGBT modules of the same type, but of different production batches are being investigated while the modules are being driven by the gate drive units of Bombardier Transportation. The results will be compared to measurements of a reference module. Devices of two different manufacturers were used. Results show that the deviations in terms of dI/dt, dV/dt and losses are generally very small. However, the IGBTs react differently if active snubbing during IGBT turn-off is applied at low temperatures. The variation in total switching losses is relatively small and may be neglected, if it is concerned with average converter loss estimations.

The second part of this experimental project deals with paralleling of 1.2 kV / 600 A IGBTs. The experiments have been focused on IGBT turn-on. Three couples of IGBT modules have been combined in a parallel connection driven by either one gate drive unit or with decoupled gate drives (two separate gate drive units). In both cases the gate drive units are equipped with digitally controlled current source amplifiers.  

Results show for all three combinations that driving with one common gate drive unit outperforms the decoupled uncorrected approach which in some cases may change the current sharing of the IGBTs severely to the worse. A sensitivity investigation regarding time shifts between the decoupled gate drives has been carried out. Subsequently, an iterative correction strategy to compensate for the differences in current sharing has been applied to the couples. Based on the results of these aforementioned experiments suggestions for requirements regarding a future gate drive unit design are being proposed.  

Abstract [sv]

Inom det här projektet har prestandaskillnader för 3.3 kV / 1500 A IGBT moduler av samma typ, men av olika produktionsserier studerats under styrning av gate drive units från Bombardier Transportation. Resultatet jämförs med mätningar från en referensmodul. IGBT moduler från två olika tillverkare studerades. Resultat visar att avvikelserna i termer av dI/dt, dV/dt och förluster är generellt relativt små. Emellertid så reagerar IGBTs olika om aktiv ”snubbing” under IGBT avstängning aktiveras vid låga temperaturer. Variationen i totala switchförlustser är relativt små och kan försummas, om de jämförs med uppskattad medelförlust för en hel strömriktare. 

I andra delen i det här experimentella projektet behandlas parallellkoppling av 1.2 kV / 600A IGBTs. Experimentet har fokuserat på turn-on av IGBTs. Tre stycken par av IGBT moduler har kombinerats parallellt och drivs antingen av en gemensam gate drive unit eller med två separata gate drive units. I de båda fallen så är gate drive units utrustade med digitalt styrda strömförstärkare. 

Resultat visar att för alla tre kombinationer, att styrning med en gemensam gate drive unit överträffar ansatsen med två separata okorrigerade gate drive units, vilken i flera fall kan förändra strömdelning mellan IGBTs till det sämre. En känslighetsanalys runt tidsskillnader mellan två separata gate drive units har gjorts. Därefter har en iterativ korrigeringsstrategi för att kompensera för förändringarna i strömdelning, blivit applicerad. Baserat på resultaten från de tidigare nämnda experimenten, så föreslås krav på hur en framtida gate drive unit bör konstrueras. 

Place, publisher, year, edition, pages
2013. , 144 p.
EES Examensarbete / Master Thesis, XR-EE-E2C 2013:007
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-156225OAI: diva2:765868
Subject / course
Power Electronics
Educational program
Master of Science - Electric Power Engineering
Available from: 2014-11-28 Created: 2014-11-25 Last updated: 2014-11-28Bibliographically approved

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