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Oxygen content and depth profiling in silicon surface technology studied by the 16O(α, α)16O resonance at 3.045 MeV
Uppsala Universitet.
Uppsala Universitet.
Uppsala Universitet.
Uppsala Universitet.
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1978 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. 18, 353-356 p.Article in journal (Refereed) Published
Abstract [en]

The use of the t6O(o,o)160 elastic scattering resonance reaction forthe study of low concentration of oxygen such as found in interfacesin silicon technology is described. We have investigated the depth resolution and the limit of the sensitivity that can be obtained with thismethod. The method has been applied to the study of AlrQ{r "sandwich" film structures and to Au and amorphous Ge contacts to silicon.

Place, publisher, year, edition, pages
1978. Vol. 18, 353-356 p.
National Category
Physical Sciences
URN: urn:nbn:se:miun:diva-23476OAI: diva2:765060
Available from: 2014-11-21 Created: 2014-11-21 Last updated: 2014-11-21Bibliographically approved

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