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Characterization of dielectric properties of polycrystalline aluminum nitride for high temperature wireless sensor nodes
Uppsala University. (Microsystems Division)
Uppsala University. (Microsystems Division)
Swedish National Defence College, Department of Military Studies, Military-Technology Division. Uppsala University. (Ångström Space Technology Centre)
Uppsal University. (Microsystems Division)
2013 (English)In: Journal of Physics: Conference Series / [ed] Paul Mitcheson, London: Institute of Physics (IOP), 2013Conference paper (Refereed)
Abstract [en]

An aluminium nitride (AlN) passive resonance circuit intended for thermallymatched high temperature wireless sensor nodes (WSN) was manufactured using thick-lmtechnology. Characterization was done for temperatures up to 900C in both a hot-chuck forfrequencies below 5 MHz, and using wireless readings of resonating circuits at 15 MHz, 59 MHz,and 116 MHz. The substrate for the circuits was sintered polycrystalline AlN. Using a simpliedmodel for the resonators where the main contribution of the frequency-shift was considered tocome from a shift of the dielectric constant for these frequencies, the temperature dependency ofthe dielectric constant for AlN was found to decrease with increasing frequency up to 15 MHz.With an observed frequency shift of 0.04% at 15 MHz, and up to 0.56% at 59 MHz over atemperature range of 900C, AlN looks as a promising material for integration of resonancecircuits directly on the substrate.

Place, publisher, year, edition, pages
London: Institute of Physics (IOP), 2013.
, Journal of Physics: Conference Series, ISSN 1742-6596 ; 476
Keyword [en]
High temperature, wireless sensor
National Category
Aerospace Engineering
Research subject
URN: urn:nbn:se:fhs:diva-4913DOI: 10.1088/1742-6596/476/1/012101OAI: diva2:756958
The 13th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS 2013). 3–6 December 2013, London, UK
Available from: 2014-10-20 Created: 2014-10-20 Last updated: 2014-10-28Bibliographically approved

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Sturesson, Peter
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Military-Technology Division
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