High thermal stability quasi-free-standing bilayer graphene formed on 4H-SiC(0 0 0 1) via platinum intercalation
2014 (English)In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 79, 631-635 p.Article in journal (Refereed) Published
Influences on electronic structure induced by platinum (Pt) deposited on monolayer graphene grown on SiC(0 0 0 1) are investigated by photoelectron spectroscopy (PES), selected area low energy electron diffraction (μ-LEED) and angle resolved photoelectron spectroscopy (ARPES) techniques at the MAX Laboratory. Stable monolayer graphene electronic properties are observed after Pt deposition and after annealing at temperatures below 600 °C. At ⩾600 °C platinum silicide forms at the graphene/SiC interface. Annealing at 900 °C results in an efficient decoupling of the carbon buffer layer from the SiC substrate and transformation into a second graphene layer. At this stage a quasi-free standing bi-layer graphene sample is obtained. The new superstructure spots then appearing in μ-LEED pattern suggest formation of an ordered platinum silicide at the interface. This silicide is found to be stable even after annealing at temperature up to 1200 °C.
Place, publisher, year, edition, pages
Elsevier, 2014. Vol. 79, 631-635 p.
IdentifiersURN: urn:nbn:se:liu:diva-111494DOI: 10.1016/j.carbon.2014.08.027OAI: oai:DiVA.org:liu-111494DiVA: diva2:756814