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Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge
Chalmers, Sweden.
Chalmers, Sweden.
SP Technical Research Institute Sweden, Sweden.
National Phys Lab, England; University of London, England.
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2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 6, 063106- p.Article in journal (Refereed) Published
Abstract [en]

We demonstrate reversible carrier density control across the Dirac point (Delta n similar to 10(13) cm(-2)) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2014. Vol. 105, no 6, 063106- p.
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-111283DOI: 10.1063/1.4892922ISI: 000341188700063OAI: oai:DiVA.org:liu-111283DiVA: diva2:755379
Note

Funding Agencies|Graphene Flagship [CNECT-ICT-604391]; Swedish Foundation for Strategic Research (SSF); Linnaeus Centre for Quantum Engineering; Knut and Allice Wallenberg Foundation; Chalmers AoA Nano; NMS (UK); EMRP project GraphOhm; EMRP within EURAMET; European Union

Available from: 2014-10-14 Created: 2014-10-14 Last updated: 2017-12-05

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