Correcting for contact geometry in Seebeck coefficient measurements of thin film devices
2014 (English)In: Organic electronics, ISSN 1566-1199, Vol. 15, no 10, 2250-2255 p.Article in journal (Refereed) Published
Driven by promising recent results, there has been a revived interest in the thermoelectric properties of organic (semi) conductors. Concomitantly, there is a need to probe the Seebeck coefficient S of modestly conducting materials in thin film geometry. Here we show that geometries that seem desirable from a signal-to-noise perspective may induce systematic errors in the measured value of S, S-m, by a factor 3 or more. The enhancement of S-m by the device geometry is related to competing conduction paths outside the region between the electrodes. We derive a universal scaling curve that allows correcting for this and show that structuring the semiconductor is not needed for the optimal electrode configuration, being a set of narrow, parallel strips.
Place, publisher, year, edition, pages
Elsevier, 2014. Vol. 15, no 10, 2250-2255 p.
Thermoelectric generators; Seebeck coefficient; Thin films; PEDOT:PSS; Device physics
IdentifiersURN: urn:nbn:se:liu:diva-110956DOI: 10.1016/j.orgel.2014.06.018ISI: 000341290000012OAI: oai:DiVA.org:liu-110956DiVA: diva2:752294
Funding Agencies|Dutch program NanoNextNL2014-10-032014-10-012015-03-06Bibliographically approved